Preparation of a stable silica membrane by a counter diffusion chemical vapor deposition method

Mikihiro Nomura, Kenta Ono, Suraj Gopalakrishnan, Takashi Sugawara, Shin Ichi Nakao

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113 Citations (Scopus)

Abstract

A stable silica membrane having excellent H2/N2 permeance ratio (over 1000) was prepared by the counter diffusion chemical vapor deposition method using tetramethyl orthosilicate (TMOS) and O2 as reactants at 873 K. TMOS and O2 were provided in the opposing geometry of the substrates, and silica layer was deposited in the substrate pores. Apparent activation energies through the silica membranes increased with increasing deposition temperatures. The activation energy of H2 was ca. 20 kJ mol-1 through the membrane. H2 permeance at 873 K permeation test was 1.5 ×10-7 mol m-2 s -1 Pa-1. H2/N2 permeance ratio was kept for 21 h under the typical steam-reforming conditions of methane for a membrane reactor (76 kPa of steam at 773 K).

Original languageEnglish
Pages (from-to)151-158
Number of pages8
JournalJournal of Membrane Science
Volume251
Issue number1-2
DOIs
Publication statusPublished - 2005 Apr 1

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Keywords

  • Counter diffusion CVD
  • Hydrogen
  • Silica membrane
  • Steam stability
  • Tetramethyl orthosilicate

ASJC Scopus subject areas

  • Biochemistry
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Filtration and Separation

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