Preparation of a stable silica membrane by a counter diffusion chemical vapor deposition method

Mikihiro Nomura; Kenta Ono; Suraj Gopalakrishnan; Takashi Sugawara; Shin Ichi Nakao

doi:10.1016/j.memsci.2004.11.008

Preparation of a stable silica membrane by a counter diffusion chemical vapor deposition method

Mikihiro Nomura, Kenta Ono, Suraj Gopalakrishnan, Takashi Sugawara, Shin Ichi Nakao

Research output: Contribution to journal › Article

113 Citations (Scopus)

Abstract

A stable silica membrane having excellent H₂/N₂ permeance ratio (over 1000) was prepared by the counter diffusion chemical vapor deposition method using tetramethyl orthosilicate (TMOS) and O₂ as reactants at 873 K. TMOS and O₂ were provided in the opposing geometry of the substrates, and silica layer was deposited in the substrate pores. Apparent activation energies through the silica membranes increased with increasing deposition temperatures. The activation energy of H₂ was ca. 20 kJ mol^-1 through the membrane. H₂ permeance at 873 K permeation test was 1.5 ×10^-7 mol m^-2 s ^-1 Pa^-1. H₂/N₂ permeance ratio was kept for 21 h under the typical steam-reforming conditions of methane for a membrane reactor (76 kPa of steam at 773 K).

Original language	English
Pages (from-to)	151-158
Number of pages	8
Journal	Journal of Membrane Science
Volume	251
Issue number	1-2
DOIs	https://doi.org/10.1016/j.memsci.2004.11.008
Publication status	Published - 2005 Apr 1

Keywords

Counter diffusion CVD
Hydrogen
Silica membrane
Steam stability
Tetramethyl orthosilicate

ASJC Scopus subject areas

Biochemistry
Materials Science(all)
Physical and Theoretical Chemistry
Filtration and Separation

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Nomura, M., Ono, K., Gopalakrishnan, S., Sugawara, T., & Nakao, S. I. (2005). Preparation of a stable silica membrane by a counter diffusion chemical vapor deposition method. Journal of Membrane Science, 251(1-2), 151-158. https://doi.org/10.1016/j.memsci.2004.11.008

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title = "Preparation of a stable silica membrane by a counter diffusion chemical vapor deposition method",

abstract = "A stable silica membrane having excellent H2/N2 permeance ratio (over 1000) was prepared by the counter diffusion chemical vapor deposition method using tetramethyl orthosilicate (TMOS) and O2 as reactants at 873 K. TMOS and O2 were provided in the opposing geometry of the substrates, and silica layer was deposited in the substrate pores. Apparent activation energies through the silica membranes increased with increasing deposition temperatures. The activation energy of H2 was ca. 20 kJ mol-1 through the membrane. H2 permeance at 873 K permeation test was 1.5 ×10-7 mol m-2 s -1 Pa-1. H2/N2 permeance ratio was kept for 21 h under the typical steam-reforming conditions of methane for a membrane reactor (76 kPa of steam at 773 K).",

keywords = "Counter diffusion CVD, Hydrogen, Silica membrane, Steam stability, Tetramethyl orthosilicate",

author = "Mikihiro Nomura and Kenta Ono and Suraj Gopalakrishnan and Takashi Sugawara and Nakao, {Shin Ichi}",

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T1 - Preparation of a stable silica membrane by a counter diffusion chemical vapor deposition method

AU - Nomura, Mikihiro

AU - Ono, Kenta

AU - Gopalakrishnan, Suraj

AU - Sugawara, Takashi

AU - Nakao, Shin Ichi

PY - 2005/4/1

Y1 - 2005/4/1

N2 - A stable silica membrane having excellent H2/N2 permeance ratio (over 1000) was prepared by the counter diffusion chemical vapor deposition method using tetramethyl orthosilicate (TMOS) and O2 as reactants at 873 K. TMOS and O2 were provided in the opposing geometry of the substrates, and silica layer was deposited in the substrate pores. Apparent activation energies through the silica membranes increased with increasing deposition temperatures. The activation energy of H2 was ca. 20 kJ mol-1 through the membrane. H2 permeance at 873 K permeation test was 1.5 ×10-7 mol m-2 s -1 Pa-1. H2/N2 permeance ratio was kept for 21 h under the typical steam-reforming conditions of methane for a membrane reactor (76 kPa of steam at 773 K).

AB - A stable silica membrane having excellent H2/N2 permeance ratio (over 1000) was prepared by the counter diffusion chemical vapor deposition method using tetramethyl orthosilicate (TMOS) and O2 as reactants at 873 K. TMOS and O2 were provided in the opposing geometry of the substrates, and silica layer was deposited in the substrate pores. Apparent activation energies through the silica membranes increased with increasing deposition temperatures. The activation energy of H2 was ca. 20 kJ mol-1 through the membrane. H2 permeance at 873 K permeation test was 1.5 ×10-7 mol m-2 s -1 Pa-1. H2/N2 permeance ratio was kept for 21 h under the typical steam-reforming conditions of methane for a membrane reactor (76 kPa of steam at 773 K).

KW - Counter diffusion CVD

KW - Hydrogen

KW - Silica membrane

KW - Steam stability

KW - Tetramethyl orthosilicate

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