Abstract
A stable silica membrane having excellent H2/N2 permeance ratio (over 1000) was prepared by the counter diffusion chemical vapor deposition method using tetramethyl orthosilicate (TMOS) and O2 as reactants at 873 K. TMOS and O2 were provided in the opposing geometry of the substrates, and silica layer was deposited in the substrate pores. Apparent activation energies through the silica membranes increased with increasing deposition temperatures. The activation energy of H2 was ca. 20 kJ mol-1 through the membrane. H2 permeance at 873 K permeation test was 1.5 ×10-7 mol m-2 s -1 Pa-1. H2/N2 permeance ratio was kept for 21 h under the typical steam-reforming conditions of methane for a membrane reactor (76 kPa of steam at 773 K).
| Original language | English |
|---|---|
| Pages (from-to) | 151-158 |
| Number of pages | 8 |
| Journal | Journal of Membrane Science |
| Volume | 251 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2005 Apr 1 |
| Externally published | Yes |
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Keywords
- Counter diffusion CVD
- Hydrogen
- Silica membrane
- Steam stability
- Tetramethyl orthosilicate
ASJC Scopus subject areas
- Filtration and Separation
- Polymers and Plastics
Cite this
Preparation of a stable silica membrane by a counter diffusion chemical vapor deposition method. / Nomura, Mikihiro; Ono, Kenta; Gopalakrishnan, Suraj; Sugawara, Takashi; Nakao, Shin Ichi.
In: Journal of Membrane Science, Vol. 251, No. 1-2, 01.04.2005, p. 151-158.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Preparation of a stable silica membrane by a counter diffusion chemical vapor deposition method
AU - Nomura, Mikihiro
AU - Ono, Kenta
AU - Gopalakrishnan, Suraj
AU - Sugawara, Takashi
AU - Nakao, Shin Ichi
PY - 2005/4/1
Y1 - 2005/4/1
N2 - A stable silica membrane having excellent H2/N2 permeance ratio (over 1000) was prepared by the counter diffusion chemical vapor deposition method using tetramethyl orthosilicate (TMOS) and O2 as reactants at 873 K. TMOS and O2 were provided in the opposing geometry of the substrates, and silica layer was deposited in the substrate pores. Apparent activation energies through the silica membranes increased with increasing deposition temperatures. The activation energy of H2 was ca. 20 kJ mol-1 through the membrane. H2 permeance at 873 K permeation test was 1.5 ×10-7 mol m-2 s -1 Pa-1. H2/N2 permeance ratio was kept for 21 h under the typical steam-reforming conditions of methane for a membrane reactor (76 kPa of steam at 773 K).
AB - A stable silica membrane having excellent H2/N2 permeance ratio (over 1000) was prepared by the counter diffusion chemical vapor deposition method using tetramethyl orthosilicate (TMOS) and O2 as reactants at 873 K. TMOS and O2 were provided in the opposing geometry of the substrates, and silica layer was deposited in the substrate pores. Apparent activation energies through the silica membranes increased with increasing deposition temperatures. The activation energy of H2 was ca. 20 kJ mol-1 through the membrane. H2 permeance at 873 K permeation test was 1.5 ×10-7 mol m-2 s -1 Pa-1. H2/N2 permeance ratio was kept for 21 h under the typical steam-reforming conditions of methane for a membrane reactor (76 kPa of steam at 773 K).
KW - Counter diffusion CVD
KW - Hydrogen
KW - Silica membrane
KW - Steam stability
KW - Tetramethyl orthosilicate
UR - http://www.scopus.com/inward/record.url?scp=15244343867&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=15244343867&partnerID=8YFLogxK
U2 - 10.1016/j.memsci.2004.11.008
DO - 10.1016/j.memsci.2004.11.008
M3 - Article
AN - SCOPUS:15244343867
VL - 251
SP - 151
EP - 158
JO - Jornal of Membrane Science
JF - Jornal of Membrane Science
SN - 0376-7388
IS - 1-2
ER -