Preparation of bismuth titanate thin films by alternately applying metal-organic decomposition and their properties

Masaki Yamaguchi, Yoichiro Masuda

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Bismuth titanate (Bi4Ti3O12) thin films were fabricated on bismuth silicate (Bi2SiO5)-coated silicon substrates by alternately applying metal-organic decomposition (MOD). In this method of alternately applying MOD, bismuth and titanium precursor layers are alternately spin-coated. Therefore, a fundamental network was assumed to be constructed before high-temperature crystallization. It was confirmed that the resultant films were single-phase Bi4Ti3O12 with a c-axis-dominant orientation. The surface morphological and electrical properties were greatly dependent on the order of bismuth and titanium precursor layers. Thus, we assumed that the thin film properties were improved by alternately applying MOD.

Original languageEnglish
Pages (from-to)5973-5976
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number9 B
Publication statusPublished - 2003 Sep

Fingerprint

Bismuth
bismuth
Decomposition
decomposition
Thin films
preparation
thin films
Metals
metals
titanium
Titanium
Silicates
Surface properties
silicates
Electric properties
Crystallization
electrical properties
crystallization
Silicon
silicon

Keywords

  • Alternately applying
  • Bismuth titanate
  • MOD

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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AB - Bismuth titanate (Bi4Ti3O12) thin films were fabricated on bismuth silicate (Bi2SiO5)-coated silicon substrates by alternately applying metal-organic decomposition (MOD). In this method of alternately applying MOD, bismuth and titanium precursor layers are alternately spin-coated. Therefore, a fundamental network was assumed to be constructed before high-temperature crystallization. It was confirmed that the resultant films were single-phase Bi4Ti3O12 with a c-axis-dominant orientation. The surface morphological and electrical properties were greatly dependent on the order of bismuth and titanium precursor layers. Thus, we assumed that the thin film properties were improved by alternately applying MOD.

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