Preparation of bismuth titanate thin films by alternately supplying metal-organic-decomposition method

Masaki Yamaguchi, Y. Masuda

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Bismuth titanate (Bi4Ti3O12) thin films were fabricated on (100)-oriented silicon substrates with bismuth silicate (Bi2SiO5) buffer layer by alternately supplying metal-organic decomposition (MOD) method. The alternately supplying MOD method was spin coated turn about bismuth and titanium precursor layers. Therefore, the fundamental formation was construction before high temperature crystallized process. It was confirmed that the resultant films were single-phase Bi4Ti3O12 with c-axis dominant orientation with thin precursor film, Furthermore, the crystallinity and the surface morphology of the film was greatly dependence on the order of precursor layers. The metal-insulator-semiconductor (MIS) structures exhibit relatively superior dielectric characteristics. Then, we think that the Bi4Ti3O12 thin film properties were improved by using alternately supplying metal-organic decomposition process.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume42
Issue numberSUPPL.
Publication statusPublished - 2003 Apr

Fingerprint

supplying
bismuth
decomposition
preparation
thin films
metals
MIS (semiconductors)
silicates
crystallinity
titanium
buffers
silicon

Keywords

  • BiTiO thin films
  • MOD method

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

@article{b72fff5205194f6db129883bfe26c699,
title = "Preparation of bismuth titanate thin films by alternately supplying metal-organic-decomposition method",
abstract = "Bismuth titanate (Bi4Ti3O12) thin films were fabricated on (100)-oriented silicon substrates with bismuth silicate (Bi2SiO5) buffer layer by alternately supplying metal-organic decomposition (MOD) method. The alternately supplying MOD method was spin coated turn about bismuth and titanium precursor layers. Therefore, the fundamental formation was construction before high temperature crystallized process. It was confirmed that the resultant films were single-phase Bi4Ti3O12 with c-axis dominant orientation with thin precursor film, Furthermore, the crystallinity and the surface morphology of the film was greatly dependence on the order of precursor layers. The metal-insulator-semiconductor (MIS) structures exhibit relatively superior dielectric characteristics. Then, we think that the Bi4Ti3O12 thin film properties were improved by using alternately supplying metal-organic decomposition process.",
keywords = "BiTiO thin films, MOD method",
author = "Masaki Yamaguchi and Y. Masuda",
year = "2003",
month = "4",
language = "English",
volume = "42",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "SUPPL.",

}

TY - JOUR

T1 - Preparation of bismuth titanate thin films by alternately supplying metal-organic-decomposition method

AU - Yamaguchi, Masaki

AU - Masuda, Y.

PY - 2003/4

Y1 - 2003/4

N2 - Bismuth titanate (Bi4Ti3O12) thin films were fabricated on (100)-oriented silicon substrates with bismuth silicate (Bi2SiO5) buffer layer by alternately supplying metal-organic decomposition (MOD) method. The alternately supplying MOD method was spin coated turn about bismuth and titanium precursor layers. Therefore, the fundamental formation was construction before high temperature crystallized process. It was confirmed that the resultant films were single-phase Bi4Ti3O12 with c-axis dominant orientation with thin precursor film, Furthermore, the crystallinity and the surface morphology of the film was greatly dependence on the order of precursor layers. The metal-insulator-semiconductor (MIS) structures exhibit relatively superior dielectric characteristics. Then, we think that the Bi4Ti3O12 thin film properties were improved by using alternately supplying metal-organic decomposition process.

AB - Bismuth titanate (Bi4Ti3O12) thin films were fabricated on (100)-oriented silicon substrates with bismuth silicate (Bi2SiO5) buffer layer by alternately supplying metal-organic decomposition (MOD) method. The alternately supplying MOD method was spin coated turn about bismuth and titanium precursor layers. Therefore, the fundamental formation was construction before high temperature crystallized process. It was confirmed that the resultant films were single-phase Bi4Ti3O12 with c-axis dominant orientation with thin precursor film, Furthermore, the crystallinity and the surface morphology of the film was greatly dependence on the order of precursor layers. The metal-insulator-semiconductor (MIS) structures exhibit relatively superior dielectric characteristics. Then, we think that the Bi4Ti3O12 thin film properties were improved by using alternately supplying metal-organic decomposition process.

KW - BiTiO thin films

KW - MOD method

UR - http://www.scopus.com/inward/record.url?scp=24244446825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24244446825&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:24244446825

VL - 42

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SUPPL.

ER -