Preparation of Bi4Ti3O12/Bi2SiO5 /Si structures derived by metal organic decomposition technique

Masaki Yamaguchi, Takao Nagatomo, Yoichiro Masuda

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Bismuth titanate (Bi4Ti3O12) thin films were fabricated on a bismuth silicate (Bi2SiO5)-coated silicon substrate by the metalorganic decomposition (MOD) method. It was confirmed that the resultant films were single-phase Bi4Ti3O12 thin films with c-axis-dominant orientation. However, the fabricated films have a high leakage current density of approximately 104 A·cm-2. It is considered that this is mainly caused by the surface roughness due to the growth of plate-like grains. The growth of the Bi4Ti3O12 thin films using the MOD method is influenced by the substrate. Therefore, it is regarded that the addition of Bi2SiO5 thin film improves the crystallinity of Bi4Ti3O12 thin films.

Original languageEnglish
Pages (from-to)5559-5563
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number9 B
Publication statusPublished - 2001 Sep

Fingerprint

Decomposition
decomposition
Thin films
preparation
thin films
Metals
metals
Bismuth
bismuth
Substrates
Leakage currents
Silicates
silicates
crystallinity
surface roughness
leakage
Current density
Surface roughness
current density
Silicon

Keywords

  • Bismuth silicate
  • Bismuth titanate
  • MFS structure
  • MOD method

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Preparation of Bi4Ti3O12/Bi2SiO5 /Si structures derived by metal organic decomposition technique. / Yamaguchi, Masaki; Nagatomo, Takao; Masuda, Yoichiro.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 9 B, 09.2001, p. 5559-5563.

Research output: Contribution to journalArticle

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