Preparation of Co 2FeSn Heusler alloy films and magnetoresistance of Fe/MgO/Co 2FeSn magnetic tunnel junctions

M. A. Tanaka, Y. Ishikawa, Y. Wada, S. Hori, A. Murata, S. Horii, Y. Yamanishi, K. Mibu, K. Kondou, T. Ono, S. Kasai

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

To obtain magnetic tunnel junctions (MTJs) composed of non-equilibrium alloy, Co 2FeSn films were prepared by atomically controlled alternate deposition at various substrate temperatures. X-ray diffraction patterns and Mössbauer spectra clarify that Co 2FeSn films in the Heusler alloy phase can be realized by growing at a substrate temperature of 250°C or below. Phase separation into cubic CoSn, hexagonal CoSn and cubic CoFe phases occurs in films grown at substrate temperatures 300°C or greater. Fe/MgO/Co 2FeSn MTJs were prepared with the Co 2FeSn layer grown at various substrate temperatures. The MTJs with the ferromagnetic Co 2FeSn layer grown at a substrate temperature of 250 C showed tunnel magnetoresistance ratios of 72.2 and 43.5 at 2 K and 300 K, respectively.

Original languageEnglish
Article number053902
JournalJournal of Applied Physics
Volume111
Issue number5
DOIs
Publication statusPublished - 2012 Mar 1
Externally publishedYes

Fingerprint

tunnel junctions
preparation
temperature
tunnels
diffraction patterns
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Tanaka, M. A., Ishikawa, Y., Wada, Y., Hori, S., Murata, A., Horii, S., ... Kasai, S. (2012). Preparation of Co 2FeSn Heusler alloy films and magnetoresistance of Fe/MgO/Co 2FeSn magnetic tunnel junctions. Journal of Applied Physics, 111(5), [053902]. https://doi.org/10.1063/1.3688324

Preparation of Co 2FeSn Heusler alloy films and magnetoresistance of Fe/MgO/Co 2FeSn magnetic tunnel junctions. / Tanaka, M. A.; Ishikawa, Y.; Wada, Y.; Hori, S.; Murata, A.; Horii, S.; Yamanishi, Y.; Mibu, K.; Kondou, K.; Ono, T.; Kasai, S.

In: Journal of Applied Physics, Vol. 111, No. 5, 053902, 01.03.2012.

Research output: Contribution to journalArticle

Tanaka, MA, Ishikawa, Y, Wada, Y, Hori, S, Murata, A, Horii, S, Yamanishi, Y, Mibu, K, Kondou, K, Ono, T & Kasai, S 2012, 'Preparation of Co 2FeSn Heusler alloy films and magnetoresistance of Fe/MgO/Co 2FeSn magnetic tunnel junctions', Journal of Applied Physics, vol. 111, no. 5, 053902. https://doi.org/10.1063/1.3688324
Tanaka, M. A. ; Ishikawa, Y. ; Wada, Y. ; Hori, S. ; Murata, A. ; Horii, S. ; Yamanishi, Y. ; Mibu, K. ; Kondou, K. ; Ono, T. ; Kasai, S. / Preparation of Co 2FeSn Heusler alloy films and magnetoresistance of Fe/MgO/Co 2FeSn magnetic tunnel junctions. In: Journal of Applied Physics. 2012 ; Vol. 111, No. 5.
@article{2141bdb0d2ad484c88e85169e086f884,
title = "Preparation of Co 2FeSn Heusler alloy films and magnetoresistance of Fe/MgO/Co 2FeSn magnetic tunnel junctions",
abstract = "To obtain magnetic tunnel junctions (MTJs) composed of non-equilibrium alloy, Co 2FeSn films were prepared by atomically controlled alternate deposition at various substrate temperatures. X-ray diffraction patterns and M{\"o}ssbauer spectra clarify that Co 2FeSn films in the Heusler alloy phase can be realized by growing at a substrate temperature of 250°C or below. Phase separation into cubic CoSn, hexagonal CoSn and cubic CoFe phases occurs in films grown at substrate temperatures 300°C or greater. Fe/MgO/Co 2FeSn MTJs were prepared with the Co 2FeSn layer grown at various substrate temperatures. The MTJs with the ferromagnetic Co 2FeSn layer grown at a substrate temperature of 250 C showed tunnel magnetoresistance ratios of 72.2 and 43.5 at 2 K and 300 K, respectively.",
author = "Tanaka, {M. A.} and Y. Ishikawa and Y. Wada and S. Hori and A. Murata and S. Horii and Y. Yamanishi and K. Mibu and K. Kondou and T. Ono and S. Kasai",
year = "2012",
month = "3",
day = "1",
doi = "10.1063/1.3688324",
language = "English",
volume = "111",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Preparation of Co 2FeSn Heusler alloy films and magnetoresistance of Fe/MgO/Co 2FeSn magnetic tunnel junctions

AU - Tanaka, M. A.

AU - Ishikawa, Y.

AU - Wada, Y.

AU - Hori, S.

AU - Murata, A.

AU - Horii, S.

AU - Yamanishi, Y.

AU - Mibu, K.

AU - Kondou, K.

AU - Ono, T.

AU - Kasai, S.

PY - 2012/3/1

Y1 - 2012/3/1

N2 - To obtain magnetic tunnel junctions (MTJs) composed of non-equilibrium alloy, Co 2FeSn films were prepared by atomically controlled alternate deposition at various substrate temperatures. X-ray diffraction patterns and Mössbauer spectra clarify that Co 2FeSn films in the Heusler alloy phase can be realized by growing at a substrate temperature of 250°C or below. Phase separation into cubic CoSn, hexagonal CoSn and cubic CoFe phases occurs in films grown at substrate temperatures 300°C or greater. Fe/MgO/Co 2FeSn MTJs were prepared with the Co 2FeSn layer grown at various substrate temperatures. The MTJs with the ferromagnetic Co 2FeSn layer grown at a substrate temperature of 250 C showed tunnel magnetoresistance ratios of 72.2 and 43.5 at 2 K and 300 K, respectively.

AB - To obtain magnetic tunnel junctions (MTJs) composed of non-equilibrium alloy, Co 2FeSn films were prepared by atomically controlled alternate deposition at various substrate temperatures. X-ray diffraction patterns and Mössbauer spectra clarify that Co 2FeSn films in the Heusler alloy phase can be realized by growing at a substrate temperature of 250°C or below. Phase separation into cubic CoSn, hexagonal CoSn and cubic CoFe phases occurs in films grown at substrate temperatures 300°C or greater. Fe/MgO/Co 2FeSn MTJs were prepared with the Co 2FeSn layer grown at various substrate temperatures. The MTJs with the ferromagnetic Co 2FeSn layer grown at a substrate temperature of 250 C showed tunnel magnetoresistance ratios of 72.2 and 43.5 at 2 K and 300 K, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84858988856&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84858988856&partnerID=8YFLogxK

U2 - 10.1063/1.3688324

DO - 10.1063/1.3688324

M3 - Article

VL - 111

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

M1 - 053902

ER -