Preparation of Co 2FeSn Heusler alloy films and magnetoresistance of Fe/MgO/Co 2FeSn magnetic tunnel junctions

M. A. Tanaka, Y. Ishikawa, Y. Wada, S. Hori, A. Murata, S. Horii, Y. Yamanishi, K. Mibu, K. Kondou, T. Ono, S. Kasai

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Abstract

To obtain magnetic tunnel junctions (MTJs) composed of non-equilibrium alloy, Co 2FeSn films were prepared by atomically controlled alternate deposition at various substrate temperatures. X-ray diffraction patterns and Mössbauer spectra clarify that Co 2FeSn films in the Heusler alloy phase can be realized by growing at a substrate temperature of 250°C or below. Phase separation into cubic CoSn, hexagonal CoSn and cubic CoFe phases occurs in films grown at substrate temperatures 300°C or greater. Fe/MgO/Co 2FeSn MTJs were prepared with the Co 2FeSn layer grown at various substrate temperatures. The MTJs with the ferromagnetic Co 2FeSn layer grown at a substrate temperature of 250 C showed tunnel magnetoresistance ratios of 72.2 and 43.5 at 2 K and 300 K, respectively.

Original languageEnglish
Article number053902
JournalJournal of Applied Physics
Volume111
Issue number5
DOIs
Publication statusPublished - 2012 Mar 1

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Tanaka, M. A., Ishikawa, Y., Wada, Y., Hori, S., Murata, A., Horii, S., Yamanishi, Y., Mibu, K., Kondou, K., Ono, T., & Kasai, S. (2012). Preparation of Co 2FeSn Heusler alloy films and magnetoresistance of Fe/MgO/Co 2FeSn magnetic tunnel junctions. Journal of Applied Physics, 111(5), [053902]. https://doi.org/10.1063/1.3688324