Preparation of highly c-axis-oriented Bi4Ti3O12 thin films and their crystallographic, dielectric and optical properties

Masaki Yamaguchi, Takao Nagamoto, Osamu Omoto

Research output: Contribution to journalArticlepeer-review

64 Citations (Scopus)


Bismuth titanate (Bi4Ti3O12) thin films with a high c-axis orientation up to 99% were prepared on (100)-oriented silicon wafers by r.f. planar magnetron sputtering using a Bi2TiO5 ceramic target at a substrate temperature of 600°C. From the Auger electron spectroscopy depth profile of the film, there is no evidence of interdiffusion of a specific element between the film and the substrate. Relative dielectric constant of these films depends on film thickness. The behavior was explained assuming a low-dielectric-constant interface layer. Using this assumption, the relative dielectric constant of Bi4Ti3O12 film was estimated to be approximately 140. This value is close to that along the c axis in a bulk form. The remanent polarization and the coercive field were 0.8 μC cm-2 and 20 kV cm-1, respectively.

Original languageEnglish
Pages (from-to)299-304
Number of pages6
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 1997 May 28


  • Crystallization
  • Dielectric properties
  • Optical properties
  • Sputtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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