Preparation of highly c-axis-oriented Bi4Ti3O12 thin films and their crystallographic, dielectric and optical properties

Masaki Yamaguchi, Takao Nagamoto, Osamu Omoto

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

Bismuth titanate (Bi4Ti3O12) thin films with a high c-axis orientation up to 99% were prepared on (100)-oriented silicon wafers by r.f. planar magnetron sputtering using a Bi2TiO5 ceramic target at a substrate temperature of 600°C. From the Auger electron spectroscopy depth profile of the film, there is no evidence of interdiffusion of a specific element between the film and the substrate. Relative dielectric constant of these films depends on film thickness. The behavior was explained assuming a low-dielectric-constant interface layer. Using this assumption, the relative dielectric constant of Bi4Ti3O12 film was estimated to be approximately 140. This value is close to that along the c axis in a bulk form. The remanent polarization and the coercive field were 0.8 μC cm-2 and 20 kV cm-1, respectively.

Original languageEnglish
Pages (from-to)299-304
Number of pages6
JournalThin Solid Films
Volume300
Issue number1-2
Publication statusPublished - 1997 May 28

Fingerprint

Dielectric properties
dielectric properties
Optical properties
optical properties
Thin films
preparation
Permittivity
permittivity
thin films
Remanence
Substrates
Auger electron spectroscopy
Bismuth
Silicon wafers
Magnetron sputtering
bismuth
Auger spectroscopy
electron spectroscopy
Film thickness
magnetron sputtering

Keywords

  • Crystallization
  • Dielectric properties
  • Optical properties
  • Sputtering

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Preparation of highly c-axis-oriented Bi4Ti3O12 thin films and their crystallographic, dielectric and optical properties. / Yamaguchi, Masaki; Nagamoto, Takao; Omoto, Osamu.

In: Thin Solid Films, Vol. 300, No. 1-2, 28.05.1997, p. 299-304.

Research output: Contribution to journalArticle

@article{5f22f8e8dfdd4a27899c3ccd6ec39a45,
title = "Preparation of highly c-axis-oriented Bi4Ti3O12 thin films and their crystallographic, dielectric and optical properties",
abstract = "Bismuth titanate (Bi4Ti3O12) thin films with a high c-axis orientation up to 99{\%} were prepared on (100)-oriented silicon wafers by r.f. planar magnetron sputtering using a Bi2TiO5 ceramic target at a substrate temperature of 600°C. From the Auger electron spectroscopy depth profile of the film, there is no evidence of interdiffusion of a specific element between the film and the substrate. Relative dielectric constant of these films depends on film thickness. The behavior was explained assuming a low-dielectric-constant interface layer. Using this assumption, the relative dielectric constant of Bi4Ti3O12 film was estimated to be approximately 140. This value is close to that along the c axis in a bulk form. The remanent polarization and the coercive field were 0.8 μC cm-2 and 20 kV cm-1, respectively.",
keywords = "Crystallization, Dielectric properties, Optical properties, Sputtering",
author = "Masaki Yamaguchi and Takao Nagamoto and Osamu Omoto",
year = "1997",
month = "5",
day = "28",
language = "English",
volume = "300",
pages = "299--304",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Preparation of highly c-axis-oriented Bi4Ti3O12 thin films and their crystallographic, dielectric and optical properties

AU - Yamaguchi, Masaki

AU - Nagamoto, Takao

AU - Omoto, Osamu

PY - 1997/5/28

Y1 - 1997/5/28

N2 - Bismuth titanate (Bi4Ti3O12) thin films with a high c-axis orientation up to 99% were prepared on (100)-oriented silicon wafers by r.f. planar magnetron sputtering using a Bi2TiO5 ceramic target at a substrate temperature of 600°C. From the Auger electron spectroscopy depth profile of the film, there is no evidence of interdiffusion of a specific element between the film and the substrate. Relative dielectric constant of these films depends on film thickness. The behavior was explained assuming a low-dielectric-constant interface layer. Using this assumption, the relative dielectric constant of Bi4Ti3O12 film was estimated to be approximately 140. This value is close to that along the c axis in a bulk form. The remanent polarization and the coercive field were 0.8 μC cm-2 and 20 kV cm-1, respectively.

AB - Bismuth titanate (Bi4Ti3O12) thin films with a high c-axis orientation up to 99% were prepared on (100)-oriented silicon wafers by r.f. planar magnetron sputtering using a Bi2TiO5 ceramic target at a substrate temperature of 600°C. From the Auger electron spectroscopy depth profile of the film, there is no evidence of interdiffusion of a specific element between the film and the substrate. Relative dielectric constant of these films depends on film thickness. The behavior was explained assuming a low-dielectric-constant interface layer. Using this assumption, the relative dielectric constant of Bi4Ti3O12 film was estimated to be approximately 140. This value is close to that along the c axis in a bulk form. The remanent polarization and the coercive field were 0.8 μC cm-2 and 20 kV cm-1, respectively.

KW - Crystallization

KW - Dielectric properties

KW - Optical properties

KW - Sputtering

UR - http://www.scopus.com/inward/record.url?scp=0031147363&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031147363&partnerID=8YFLogxK

M3 - Article

VL - 300

SP - 299

EP - 304

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -