Preparation of thin Li 4SiO 4 membranes by using a CVD method

Mikihiro Nomura, Youichiro Nishi, Tetsuya Sakanishi, Keisuke Utsumi, Ryutaro Nakamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

CVD (chemical vapor deposition) procedures were investigated by using a counter diffusion CVD method. The effects of silica precursors on the hydrogen permeation properties of the silica membranes were discussed. 5 types of silica alkoxides (tetramethylorthosilicate (TMOS), methyltrimethoxysilane (MTMOS), propyltrimethoxysilane (PTMOS), dimethyldimethoxysilane (DMDMOS), and trimethylmethoxysilane (TMMOS)) were employed as the silica precursors; they have different numbers of methyl groups. Hydrogen permeance through the DMDMOS membrane prepared at 500 °C was 9.0 × 10 -7 mol m -2 s -1 Pa -1, and H 2/N 2 selectivity was 920. Activation energy of H 2 permeation through the silica membrane prepared from TMOS was 10.5 kJ mol -1 that was the maximum among the 5 types of the silica precursor. This indicates dense silica layer can be obtained from TMOS. Thus, TMOS was employed for the further Li 4SiO 4 preparation. High temperature CO 2 permselective membranes were successfully prepared by using Li 4SiO 4 as a CO 2 selective layer. Pinholes of the Li 4SiO 4 layer was filled by the CVD post treatment at 600 °C. CO 2/N 2 permselectivity was 1.2 at the 600 °C permeation test. The CO 2 permeance ratio is higher than the Knudsen diffusion difference. Thus, this selectivity was explained by the CO 2 selective adsorption on the Li 4SiO 4 layer.

Original languageEnglish
Title of host publicationEnergy Procedia
Pages1012-1019
Number of pages8
Volume37
DOIs
Publication statusPublished - 2013
Event11th International Conference on Greenhouse Gas Control Technologies, GHGT 2012 - Kyoto, Japan
Duration: 2012 Nov 182012 Nov 22

Other

Other11th International Conference on Greenhouse Gas Control Technologies, GHGT 2012
CountryJapan
CityKyoto
Period12/11/1812/11/22

Fingerprint

Chemical vapor deposition
Silica
Membranes
Permeation
Permselective membranes
Hydrogen
Activation energy
Adsorption
Temperature

Keywords

  • CVD method
  • High temperature CO separation
  • Li SiO membranes

ASJC Scopus subject areas

  • Energy(all)

Cite this

Nomura, M., Nishi, Y., Sakanishi, T., Utsumi, K., & Nakamura, R. (2013). Preparation of thin Li 4SiO 4 membranes by using a CVD method In Energy Procedia (Vol. 37, pp. 1012-1019) https://doi.org/10.1016/j.egypro.2013.05.197

Preparation of thin Li 4SiO 4 membranes by using a CVD method . / Nomura, Mikihiro; Nishi, Youichiro; Sakanishi, Tetsuya; Utsumi, Keisuke; Nakamura, Ryutaro.

Energy Procedia. Vol. 37 2013. p. 1012-1019.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nomura, M, Nishi, Y, Sakanishi, T, Utsumi, K & Nakamura, R 2013, Preparation of thin Li 4SiO 4 membranes by using a CVD method in Energy Procedia. vol. 37, pp. 1012-1019, 11th International Conference on Greenhouse Gas Control Technologies, GHGT 2012, Kyoto, Japan, 12/11/18. https://doi.org/10.1016/j.egypro.2013.05.197
Nomura M, Nishi Y, Sakanishi T, Utsumi K, Nakamura R. Preparation of thin Li 4SiO 4 membranes by using a CVD method In Energy Procedia. Vol. 37. 2013. p. 1012-1019 https://doi.org/10.1016/j.egypro.2013.05.197
Nomura, Mikihiro ; Nishi, Youichiro ; Sakanishi, Tetsuya ; Utsumi, Keisuke ; Nakamura, Ryutaro. / Preparation of thin Li 4SiO 4 membranes by using a CVD method Energy Procedia. Vol. 37 2013. pp. 1012-1019
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AB - CVD (chemical vapor deposition) procedures were investigated by using a counter diffusion CVD method. The effects of silica precursors on the hydrogen permeation properties of the silica membranes were discussed. 5 types of silica alkoxides (tetramethylorthosilicate (TMOS), methyltrimethoxysilane (MTMOS), propyltrimethoxysilane (PTMOS), dimethyldimethoxysilane (DMDMOS), and trimethylmethoxysilane (TMMOS)) were employed as the silica precursors; they have different numbers of methyl groups. Hydrogen permeance through the DMDMOS membrane prepared at 500 °C was 9.0 × 10 -7 mol m -2 s -1 Pa -1, and H 2/N 2 selectivity was 920. Activation energy of H 2 permeation through the silica membrane prepared from TMOS was 10.5 kJ mol -1 that was the maximum among the 5 types of the silica precursor. This indicates dense silica layer can be obtained from TMOS. Thus, TMOS was employed for the further Li 4SiO 4 preparation. High temperature CO 2 permselective membranes were successfully prepared by using Li 4SiO 4 as a CO 2 selective layer. Pinholes of the Li 4SiO 4 layer was filled by the CVD post treatment at 600 °C. CO 2/N 2 permselectivity was 1.2 at the 600 °C permeation test. The CO 2 permeance ratio is higher than the Knudsen diffusion difference. Thus, this selectivity was explained by the CO 2 selective adsorption on the Li 4SiO 4 layer.

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