Process/ pad effects on electrical and physical properties of CMP copper damascene interconnects

J-F.Wang J-F.Wang, A.R.Sethuraman A.R.Sethuraman, L.Cook L.Cook, K.Ueno K.Ueno, Y.Tsuchiya Y.Tsuchiya, Kazuyoshi Ueno

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	387-392
Journal	Proceedings of 1996 VLSI Multilevel Interconnection Conference
Publication status	Published - 1996 May 1

Cite this

@article{78f895ee6acf4fc088cfca355df46889,

title = "Process/ pad effects on electrical and physical properties of CMP copper damascene interconnects",

author = "J-F.Wang J-F.Wang and A.R.Sethuraman A.R.Sethuraman and L.Cook L.Cook and K.Ueno K.Ueno and Y.Tsuchiya Y.Tsuchiya and Kazuyoshi Ueno",

year = "1996",

month = may,

day = "1",

language = "English",

pages = "387--392",

journal = "Proceedings of 1996 VLSI Multilevel Interconnection Conference",

}

TY - JOUR

T1 - Process/ pad effects on electrical and physical properties of CMP copper damascene interconnects

AU - J-F.Wang, J-F.Wang

AU - A.R.Sethuraman, A.R.Sethuraman

AU - L.Cook, L.Cook

AU - K.Ueno, K.Ueno

AU - Y.Tsuchiya, Y.Tsuchiya

AU - Ueno, Kazuyoshi

PY - 1996/5/1

Y1 - 1996/5/1

M3 - Article

SP - 387

EP - 392

JO - Proceedings of 1996 VLSI Multilevel Interconnection Conference

JF - Proceedings of 1996 VLSI Multilevel Interconnection Conference

ER -