Properties of fluorinated silicon oxide films formed using fluorotriethoxysilane for interlayer dielectrics in multilevel interconnections

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Abstract

Properties of a fluorinated silicon oxide (SiOF) film for interlayer dielectrics in multilevel interconnections of ultralarge-scale integrated circuits (ULSIs) are investigated. The SiOF films are formed by a room temperature chemical vapor deposition (RTCVD) technique using fluorotriethoxysilane [FSi(OC2H5)3, FTES] and pure water as gas sources. The SiOF film property changes by annealing at 400 or 900°C are studied. Although the Si-O bond absorption peak position in the Fourier transform infrared (FTIR) spectrum is not changed by 400°C annealing, the peak position for the 900°C annealed SiOF films shifts to low wave numbers. The full width at half-maximum (FWHM) of the Si-O bond absorption peak increases by 400°C annealing, and it further increases by 900°C annealing. The tendency of the Si-F bond peak absorption coefficient change is inverse to the change of FWHM, indicating that fluorine influences the Si-O bond nature. Other properties such as the fluorine atomic concentration, refractive index, etching rate, shrinkage, residual stress, and leakage current density are changed by the annealing. These property changes are due to changes in the chemical bonding structure. No crack is observed for the SiOF films formed on aluminum wiring patterns after 400°C annealing.

Original languageEnglish
Pages (from-to)1084-1087
Number of pages4
JournalJournal of the Electrochemical Society
Volume143
Issue number3
Publication statusPublished - 1996 Mar
Externally publishedYes

Fingerprint

Silicon oxides
silicon oxides
Oxide films
oxide films
interlayers
Annealing
annealing
Fluorine
Full width at half maximum
fluorine
wiring
Electric wiring
Aluminum
shrinkage
Leakage currents
residual stress
integrated circuits
Integrated circuits
Chemical vapor deposition
Etching

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

@article{d261c09e4479440aa96382da5be29c5d,
title = "Properties of fluorinated silicon oxide films formed using fluorotriethoxysilane for interlayer dielectrics in multilevel interconnections",
abstract = "Properties of a fluorinated silicon oxide (SiOF) film for interlayer dielectrics in multilevel interconnections of ultralarge-scale integrated circuits (ULSIs) are investigated. The SiOF films are formed by a room temperature chemical vapor deposition (RTCVD) technique using fluorotriethoxysilane [FSi(OC2H5)3, FTES] and pure water as gas sources. The SiOF film property changes by annealing at 400 or 900°C are studied. Although the Si-O bond absorption peak position in the Fourier transform infrared (FTIR) spectrum is not changed by 400°C annealing, the peak position for the 900°C annealed SiOF films shifts to low wave numbers. The full width at half-maximum (FWHM) of the Si-O bond absorption peak increases by 400°C annealing, and it further increases by 900°C annealing. The tendency of the Si-F bond peak absorption coefficient change is inverse to the change of FWHM, indicating that fluorine influences the Si-O bond nature. Other properties such as the fluorine atomic concentration, refractive index, etching rate, shrinkage, residual stress, and leakage current density are changed by the annealing. These property changes are due to changes in the chemical bonding structure. No crack is observed for the SiOF films formed on aluminum wiring patterns after 400°C annealing.",
author = "Tetsuya Homma",
year = "1996",
month = "3",
language = "English",
volume = "143",
pages = "1084--1087",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "3",

}

TY - JOUR

T1 - Properties of fluorinated silicon oxide films formed using fluorotriethoxysilane for interlayer dielectrics in multilevel interconnections

AU - Homma, Tetsuya

PY - 1996/3

Y1 - 1996/3

N2 - Properties of a fluorinated silicon oxide (SiOF) film for interlayer dielectrics in multilevel interconnections of ultralarge-scale integrated circuits (ULSIs) are investigated. The SiOF films are formed by a room temperature chemical vapor deposition (RTCVD) technique using fluorotriethoxysilane [FSi(OC2H5)3, FTES] and pure water as gas sources. The SiOF film property changes by annealing at 400 or 900°C are studied. Although the Si-O bond absorption peak position in the Fourier transform infrared (FTIR) spectrum is not changed by 400°C annealing, the peak position for the 900°C annealed SiOF films shifts to low wave numbers. The full width at half-maximum (FWHM) of the Si-O bond absorption peak increases by 400°C annealing, and it further increases by 900°C annealing. The tendency of the Si-F bond peak absorption coefficient change is inverse to the change of FWHM, indicating that fluorine influences the Si-O bond nature. Other properties such as the fluorine atomic concentration, refractive index, etching rate, shrinkage, residual stress, and leakage current density are changed by the annealing. These property changes are due to changes in the chemical bonding structure. No crack is observed for the SiOF films formed on aluminum wiring patterns after 400°C annealing.

AB - Properties of a fluorinated silicon oxide (SiOF) film for interlayer dielectrics in multilevel interconnections of ultralarge-scale integrated circuits (ULSIs) are investigated. The SiOF films are formed by a room temperature chemical vapor deposition (RTCVD) technique using fluorotriethoxysilane [FSi(OC2H5)3, FTES] and pure water as gas sources. The SiOF film property changes by annealing at 400 or 900°C are studied. Although the Si-O bond absorption peak position in the Fourier transform infrared (FTIR) spectrum is not changed by 400°C annealing, the peak position for the 900°C annealed SiOF films shifts to low wave numbers. The full width at half-maximum (FWHM) of the Si-O bond absorption peak increases by 400°C annealing, and it further increases by 900°C annealing. The tendency of the Si-F bond peak absorption coefficient change is inverse to the change of FWHM, indicating that fluorine influences the Si-O bond nature. Other properties such as the fluorine atomic concentration, refractive index, etching rate, shrinkage, residual stress, and leakage current density are changed by the annealing. These property changes are due to changes in the chemical bonding structure. No crack is observed for the SiOF films formed on aluminum wiring patterns after 400°C annealing.

UR - http://www.scopus.com/inward/record.url?scp=0030109632&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030109632&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030109632

VL - 143

SP - 1084

EP - 1087

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 3

ER -