Properties of Fluorinated Silicon Oxide Films Formed Using Fluorotriethoxysilane for Interlayer Dielectrics in Multilevel Interconnections.

Research output: Contribution to journalArticle

24 Citations (Scopus)
Original languageEnglish
Pages (from-to)1084-1087
JournalJournal of the Electrochemical Society
Volume143
Publication statusPublished - 1996 Mar 1

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