Properties of Fluorinated Silicon Oxide Films Formed Using Fluorotriethoxysilane for Interlayer Dielectrics in Multilevel Interconnections.

Research output: Contribution to journalArticle

24 Citations (Scopus)
Original languageEnglish
Pages (from-to)1084-1087
JournalJournal of the Electrochemical Society
Volume143
Publication statusPublished - 1996 Mar 1

Cite this

@article{d3f83f6641824c09a688c914ec0f38b7,
title = "Properties of Fluorinated Silicon Oxide Films Formed Using Fluorotriethoxysilane for Interlayer Dielectrics in Multilevel Interconnections.",
author = "T. Homma",
year = "1996",
month = "3",
day = "1",
language = "English",
volume = "143",
pages = "1084--1087",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",

}

TY - JOUR

T1 - Properties of Fluorinated Silicon Oxide Films Formed Using Fluorotriethoxysilane for Interlayer Dielectrics in Multilevel Interconnections.

AU - Homma, T.

PY - 1996/3/1

Y1 - 1996/3/1

M3 - Article

VL - 143

SP - 1084

EP - 1087

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

ER -