Properties of HTS for successful U/n processing

R. Weinstein, Y. Ren, R. Sawh, A. Gandini, W. Hennig, M. Murakami, T. Mochida, N. Chikumoto, N. Sakai, G. Krabbes, W. Bieger, D. Milliken, S. X. Dou, S. Tönies, M. Eisterer, H. W. Weber

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Insertion of uranium into HTS precursor powders prior to texturing, and irradiation with thermal neutrons after texturing is called U/n processing. Damage caused by uranium fission fragments has been extensively studied for pinning center behavior in Y123, and Ag-BiSCCO tape. In both HTS systems results for Jc, anisotropy, etc. are excellent. We consider the chemical and physical conditions under which U/n processing is successful, including spacing, S, and size of deposits of U compounds, and neutron absorption by the HTS. If δ=length of the quasi-columnar fission fragment defects, we find S<25 ∼5.4μm is needed for the best U/n results and, thus, if deposits of U compounds exist, sub-micron size is desirable. Application of these conditions is considered to Y123, Ag-BiSCCO tape, Nd123, Sm123 and Gd123. Studies in progress of Nd123 and Sm123 are reported.

Original languageEnglish
Pages (from-to)1415-1418
Number of pages4
JournalPhysica C: Superconductivity and its applications
Volume341-348
Issue numberPART 2
DOIs
Publication statusPublished - 2000 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Properties of HTS for successful U/n processing'. Together they form a unique fingerprint.

  • Cite this

    Weinstein, R., Ren, Y., Sawh, R., Gandini, A., Hennig, W., Murakami, M., Mochida, T., Chikumoto, N., Sakai, N., Krabbes, G., Bieger, W., Milliken, D., Dou, S. X., Tönies, S., Eisterer, M., & Weber, H. W. (2000). Properties of HTS for successful U/n processing. Physica C: Superconductivity and its applications, 341-348(PART 2), 1415-1418. https://doi.org/10.1016/S0921-4534(00)00960-6