Abstract
Insertion of uranium into HTS precursor powders prior to texturing, and irradiation with thermal neutrons after texturing is called U/n processing. Damage caused by uranium fission fragments has been extensively studied for pinning center behavior in Y123, and Ag-BiSCCO tape. In both HTS systems results for Jc, anisotropy, etc. are excellent. We consider the chemical and physical conditions under which U/n processing is successful, including spacing, S, and size of deposits of U compounds, and neutron absorption by the HTS. If δ=length of the quasi-columnar fission fragment defects, we find S<25 ∼5.4μm is needed for the best U/n results and, thus, if deposits of U compounds exist, sub-micron size is desirable. Application of these conditions is considered to Y123, Ag-BiSCCO tape, Nd123, Sm123 and Gd123. Studies in progress of Nd123 and Sm123 are reported.
| Original language | English |
|---|---|
| Pages (from-to) | 1415-1418 |
| Number of pages | 4 |
| Journal | Physica C: Superconductivity and its Applications |
| Volume | 341-348 |
| Issue number | PART 2 |
| Publication status | Published - 2000 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Properties of HTS for successful U/n processing. / Weinstein, R.; Ren, Y.; Sawh, R.; Gandini, A.; Hennig, W.; Murakami, Masato; Mochida, T.; Chikumoto, N.; Sakai, Naomichi; Krabbes, G.; Bieger, W.; Milliken, D.; Dou, S. X.; Tönies, S.; Eisterer, M.; Weber, H. W.
In: Physica C: Superconductivity and its Applications, Vol. 341-348, No. PART 2, 2000, p. 1415-1418.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Properties of HTS for successful U/n processing
AU - Weinstein, R.
AU - Ren, Y.
AU - Sawh, R.
AU - Gandini, A.
AU - Hennig, W.
AU - Murakami, Masato
AU - Mochida, T.
AU - Chikumoto, N.
AU - Sakai, Naomichi
AU - Krabbes, G.
AU - Bieger, W.
AU - Milliken, D.
AU - Dou, S. X.
AU - Tönies, S.
AU - Eisterer, M.
AU - Weber, H. W.
PY - 2000
Y1 - 2000
N2 - Insertion of uranium into HTS precursor powders prior to texturing, and irradiation with thermal neutrons after texturing is called U/n processing. Damage caused by uranium fission fragments has been extensively studied for pinning center behavior in Y123, and Ag-BiSCCO tape. In both HTS systems results for Jc, anisotropy, etc. are excellent. We consider the chemical and physical conditions under which U/n processing is successful, including spacing, S, and size of deposits of U compounds, and neutron absorption by the HTS. If δ=length of the quasi-columnar fission fragment defects, we find S<25 ∼5.4μm is needed for the best U/n results and, thus, if deposits of U compounds exist, sub-micron size is desirable. Application of these conditions is considered to Y123, Ag-BiSCCO tape, Nd123, Sm123 and Gd123. Studies in progress of Nd123 and Sm123 are reported.
AB - Insertion of uranium into HTS precursor powders prior to texturing, and irradiation with thermal neutrons after texturing is called U/n processing. Damage caused by uranium fission fragments has been extensively studied for pinning center behavior in Y123, and Ag-BiSCCO tape. In both HTS systems results for Jc, anisotropy, etc. are excellent. We consider the chemical and physical conditions under which U/n processing is successful, including spacing, S, and size of deposits of U compounds, and neutron absorption by the HTS. If δ=length of the quasi-columnar fission fragment defects, we find S<25 ∼5.4μm is needed for the best U/n results and, thus, if deposits of U compounds exist, sub-micron size is desirable. Application of these conditions is considered to Y123, Ag-BiSCCO tape, Nd123, Sm123 and Gd123. Studies in progress of Nd123 and Sm123 are reported.
UR - http://www.scopus.com/inward/record.url?scp=0343397303&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0343397303&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0343397303
VL - 341-348
SP - 1415
EP - 1418
JO - Physica C: Superconductivity and its Applications
JF - Physica C: Superconductivity and its Applications
SN - 0921-4534
IS - PART 2
ER -