Properties of liquid-phase-deposited SiO2 films for interlayer dielectrics in ultralarge-scale integrated circuit multilevel interconnections

Tetsuya Homma, Yukinobu Murao

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Properties of a new fluorinated SiO2 film for interlayer dielectrics in multilevel interconnections of ultralarge-scale integrated circuits (ULSIs) are investigated. The fluorinated SiO2 films are formed at 35 °C by a liquid phase deposition (LPD) technique using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. The LPD SiO2 film surface profiles on polysilicon and aluminum wirings are flat enough, indicating that the LPD technique has good capability for the surface planarization of interlayer dielectric films. The compositions of as-deposited LPD SiO2 films and those annealed at 400 and 900 °C are SiO1.85F0.15, SiO1.85F0.15 and SiO1.90F0.10 respectively. The LPD SiO2 film deposition mechanism is explained as follows: (i) fluorosilanols [FnSi(OH)4-n] formation; (ii) fluorosilanol oligomer formation by a catalytic reaction in the solution; (iii) oligomer adsorption onto the substrate surface; (iv) oligomer polymerization by a catalytic reaction. The absorption peak position, full width at half-maximum (FWHM) and absorption coefficient for the Si-O bond in the Fourier transform infrared spectra for the as-deposited LPD SiO2 films are 9.17 micrometer, 0.83 micrometer and 1.19 × 106 m-1, respectively, indicating that the films are formed by tightly bonded Si-O networks. The as-deposited LPD SiO2 films have a refractive index of 1.433, a density of 2.19 × 103 kg m-3, an etching rate (measured using 1:30 buffered hydrofluoric acid (HF) solution) of 83 nm min-1, and a residual stress of 20 MPa (tensile). The film shrinkages after annealing at 400 and 900 °C are 0.8% and 2.0% respectively. Although these properties are changed by annealing at 400 and 900 °C, these values are still better than those of SiO2 films deposited by chemical vapor deposition (CVD) at 400 °C for use as interlayer dielectric films. The LPD SiO2 films have better electrical properties, such as lower leakage current, higher dielectric breakdown strength (> 6.3 × 108 V m-1) and lower dielectric constant (< 3.9 at 1 MHz), than the CVD SiO2 films.

Original languageEnglish
Pages (from-to)15-21
Number of pages7
JournalThin Solid Films
Volume249
Issue number1
DOIs
Publication statusPublished - 1994 Sep 1
Externally publishedYes

Fingerprint

integrated circuits
Integrated circuits
interlayers
liquid phases
Liquids
Oligomers
oligomers
Dielectric films
Chemical vapor deposition
micrometers
Annealing
Hydrofluoric Acid
vapor deposition
Hydrofluoric acid
Electric wiring
annealing
Full width at half maximum
Aluminum
Electric breakdown
wiring

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Properties of liquid-phase-deposited SiO2 films for interlayer dielectrics in ultralarge-scale integrated circuit multilevel interconnections. / Homma, Tetsuya; Murao, Yukinobu.

In: Thin Solid Films, Vol. 249, No. 1, 01.09.1994, p. 15-21.

Research output: Contribution to journalArticle

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abstract = "Properties of a new fluorinated SiO2 film for interlayer dielectrics in multilevel interconnections of ultralarge-scale integrated circuits (ULSIs) are investigated. The fluorinated SiO2 films are formed at 35 °C by a liquid phase deposition (LPD) technique using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. The LPD SiO2 film surface profiles on polysilicon and aluminum wirings are flat enough, indicating that the LPD technique has good capability for the surface planarization of interlayer dielectric films. The compositions of as-deposited LPD SiO2 films and those annealed at 400 and 900 °C are SiO1.85F0.15, SiO1.85F0.15 and SiO1.90F0.10 respectively. The LPD SiO2 film deposition mechanism is explained as follows: (i) fluorosilanols [FnSi(OH)4-n] formation; (ii) fluorosilanol oligomer formation by a catalytic reaction in the solution; (iii) oligomer adsorption onto the substrate surface; (iv) oligomer polymerization by a catalytic reaction. The absorption peak position, full width at half-maximum (FWHM) and absorption coefficient for the Si-O bond in the Fourier transform infrared spectra for the as-deposited LPD SiO2 films are 9.17 micrometer, 0.83 micrometer and 1.19 × 106 m-1, respectively, indicating that the films are formed by tightly bonded Si-O networks. The as-deposited LPD SiO2 films have a refractive index of 1.433, a density of 2.19 × 103 kg m-3, an etching rate (measured using 1:30 buffered hydrofluoric acid (HF) solution) of 83 nm min-1, and a residual stress of 20 MPa (tensile). The film shrinkages after annealing at 400 and 900 °C are 0.8{\%} and 2.0{\%} respectively. Although these properties are changed by annealing at 400 and 900 °C, these values are still better than those of SiO2 films deposited by chemical vapor deposition (CVD) at 400 °C for use as interlayer dielectric films. The LPD SiO2 films have better electrical properties, such as lower leakage current, higher dielectric breakdown strength (> 6.3 × 108 V m-1) and lower dielectric constant (< 3.9 at 1 MHz), than the CVD SiO2 films.",
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N2 - Properties of a new fluorinated SiO2 film for interlayer dielectrics in multilevel interconnections of ultralarge-scale integrated circuits (ULSIs) are investigated. The fluorinated SiO2 films are formed at 35 °C by a liquid phase deposition (LPD) technique using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. The LPD SiO2 film surface profiles on polysilicon and aluminum wirings are flat enough, indicating that the LPD technique has good capability for the surface planarization of interlayer dielectric films. The compositions of as-deposited LPD SiO2 films and those annealed at 400 and 900 °C are SiO1.85F0.15, SiO1.85F0.15 and SiO1.90F0.10 respectively. The LPD SiO2 film deposition mechanism is explained as follows: (i) fluorosilanols [FnSi(OH)4-n] formation; (ii) fluorosilanol oligomer formation by a catalytic reaction in the solution; (iii) oligomer adsorption onto the substrate surface; (iv) oligomer polymerization by a catalytic reaction. The absorption peak position, full width at half-maximum (FWHM) and absorption coefficient for the Si-O bond in the Fourier transform infrared spectra for the as-deposited LPD SiO2 films are 9.17 micrometer, 0.83 micrometer and 1.19 × 106 m-1, respectively, indicating that the films are formed by tightly bonded Si-O networks. The as-deposited LPD SiO2 films have a refractive index of 1.433, a density of 2.19 × 103 kg m-3, an etching rate (measured using 1:30 buffered hydrofluoric acid (HF) solution) of 83 nm min-1, and a residual stress of 20 MPa (tensile). The film shrinkages after annealing at 400 and 900 °C are 0.8% and 2.0% respectively. Although these properties are changed by annealing at 400 and 900 °C, these values are still better than those of SiO2 films deposited by chemical vapor deposition (CVD) at 400 °C for use as interlayer dielectric films. The LPD SiO2 films have better electrical properties, such as lower leakage current, higher dielectric breakdown strength (> 6.3 × 108 V m-1) and lower dielectric constant (< 3.9 at 1 MHz), than the CVD SiO2 films.

AB - Properties of a new fluorinated SiO2 film for interlayer dielectrics in multilevel interconnections of ultralarge-scale integrated circuits (ULSIs) are investigated. The fluorinated SiO2 films are formed at 35 °C by a liquid phase deposition (LPD) technique using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. The LPD SiO2 film surface profiles on polysilicon and aluminum wirings are flat enough, indicating that the LPD technique has good capability for the surface planarization of interlayer dielectric films. The compositions of as-deposited LPD SiO2 films and those annealed at 400 and 900 °C are SiO1.85F0.15, SiO1.85F0.15 and SiO1.90F0.10 respectively. The LPD SiO2 film deposition mechanism is explained as follows: (i) fluorosilanols [FnSi(OH)4-n] formation; (ii) fluorosilanol oligomer formation by a catalytic reaction in the solution; (iii) oligomer adsorption onto the substrate surface; (iv) oligomer polymerization by a catalytic reaction. The absorption peak position, full width at half-maximum (FWHM) and absorption coefficient for the Si-O bond in the Fourier transform infrared spectra for the as-deposited LPD SiO2 films are 9.17 micrometer, 0.83 micrometer and 1.19 × 106 m-1, respectively, indicating that the films are formed by tightly bonded Si-O networks. The as-deposited LPD SiO2 films have a refractive index of 1.433, a density of 2.19 × 103 kg m-3, an etching rate (measured using 1:30 buffered hydrofluoric acid (HF) solution) of 83 nm min-1, and a residual stress of 20 MPa (tensile). The film shrinkages after annealing at 400 and 900 °C are 0.8% and 2.0% respectively. Although these properties are changed by annealing at 400 and 900 °C, these values are still better than those of SiO2 films deposited by chemical vapor deposition (CVD) at 400 °C for use as interlayer dielectric films. The LPD SiO2 films have better electrical properties, such as lower leakage current, higher dielectric breakdown strength (> 6.3 × 108 V m-1) and lower dielectric constant (< 3.9 at 1 MHz), than the CVD SiO2 films.

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