Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability

Kazunori Kurishima, Toshihide Nabatame, Takio Kizu, Nobuhiko Mitoma, Kazuhito Tsukagoshi, Tomomi Sawada, Akihiko Ohi, Ippei Yamamoto, Tomoji Ohishi, Toyohiro Chikyow, Atsushi Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We studied characteristic of carbon-doped indium-tungsten-oxide (In1-xWxOC) thin film transistors (TFTs) with SiO2 gate insulator.The In1-xWxOC films, were fabricated by co-sputtering method with WC and In2O3 targets, had an amorphous structure and maintained W-C bond even after annealing at 300°C. The saturation field-effect mobility, on/off current ratio and subthreshold swing values of the In0.96W0.04OC TFT were 5.6 cm2/Vs, 1.0 × 109 and 0.52 V/decade, respectively. To effect of doped carbon in In1-xWxOC channel on reliability of transistor properties, we compared the turn on voltage shift (ΔVon) behavior between the In0.96W0.04OC and In0.98W0.02O TFTs under positive gate bias stress (PBS) and negative gate bias stress (NBS). The ΔVon of the In0.96W0.04OC TFT was always smaller than that of In0.98W0.02O TFT under PBS. Moreover, it is clear that the ΔVon (∼ 0 V) of In0.96W0.04OC TFT was improved significantly compared to that (-0.5 V) of In0.98W0.02O TFT under the NBS of 5000 s. We concluded that the In1-xWxOC film is one of the promising candidates as InOx-based metal oxide semiconductor channel material.

Original languageEnglish
Title of host publicationThin Film Transistors 13, TFT 13
PublisherElectrochemical Society Inc.
Pages149-156
Number of pages8
Volume75
Edition10
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016
EventSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2016 Oct 22016 Oct 7

Other

OtherSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period16/10/216/10/7

Fingerprint

Thin film transistors
Indium
Tungsten
Carbon
Oxides
Sputtering
Transistors
Annealing
Electric potential
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kurishima, K., Nabatame, T., Kizu, T., Mitoma, N., Tsukagoshi, K., Sawada, T., ... Ogura, A. (2016). Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability. In Thin Film Transistors 13, TFT 13 (10 ed., Vol. 75, pp. 149-156). Electrochemical Society Inc.. https://doi.org/10.1149/07510.0149ecst

Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability. / Kurishima, Kazunori; Nabatame, Toshihide; Kizu, Takio; Mitoma, Nobuhiko; Tsukagoshi, Kazuhito; Sawada, Tomomi; Ohi, Akihiko; Yamamoto, Ippei; Ohishi, Tomoji; Chikyow, Toyohiro; Ogura, Atsushi.

Thin Film Transistors 13, TFT 13. Vol. 75 10. ed. Electrochemical Society Inc., 2016. p. 149-156.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kurishima, K, Nabatame, T, Kizu, T, Mitoma, N, Tsukagoshi, K, Sawada, T, Ohi, A, Yamamoto, I, Ohishi, T, Chikyow, T & Ogura, A 2016, Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability. in Thin Film Transistors 13, TFT 13. 10 edn, vol. 75, Electrochemical Society Inc., pp. 149-156, Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 16/10/2. https://doi.org/10.1149/07510.0149ecst
Kurishima K, Nabatame T, Kizu T, Mitoma N, Tsukagoshi K, Sawada T et al. Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability. In Thin Film Transistors 13, TFT 13. 10 ed. Vol. 75. Electrochemical Society Inc. 2016. p. 149-156 https://doi.org/10.1149/07510.0149ecst
Kurishima, Kazunori ; Nabatame, Toshihide ; Kizu, Takio ; Mitoma, Nobuhiko ; Tsukagoshi, Kazuhito ; Sawada, Tomomi ; Ohi, Akihiko ; Yamamoto, Ippei ; Ohishi, Tomoji ; Chikyow, Toyohiro ; Ogura, Atsushi. / Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability. Thin Film Transistors 13, TFT 13. Vol. 75 10. ed. Electrochemical Society Inc., 2016. pp. 149-156
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AU - Kurishima, Kazunori

AU - Nabatame, Toshihide

AU - Kizu, Takio

AU - Mitoma, Nobuhiko

AU - Tsukagoshi, Kazuhito

AU - Sawada, Tomomi

AU - Ohi, Akihiko

AU - Yamamoto, Ippei

AU - Ohishi, Tomoji

AU - Chikyow, Toyohiro

AU - Ogura, Atsushi

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N2 - We studied characteristic of carbon-doped indium-tungsten-oxide (In1-xWxOC) thin film transistors (TFTs) with SiO2 gate insulator.The In1-xWxOC films, were fabricated by co-sputtering method with WC and In2O3 targets, had an amorphous structure and maintained W-C bond even after annealing at 300°C. The saturation field-effect mobility, on/off current ratio and subthreshold swing values of the In0.96W0.04OC TFT were 5.6 cm2/Vs, 1.0 × 109 and 0.52 V/decade, respectively. To effect of doped carbon in In1-xWxOC channel on reliability of transistor properties, we compared the turn on voltage shift (ΔVon) behavior between the In0.96W0.04OC and In0.98W0.02O TFTs under positive gate bias stress (PBS) and negative gate bias stress (NBS). The ΔVon of the In0.96W0.04OC TFT was always smaller than that of In0.98W0.02O TFT under PBS. Moreover, it is clear that the ΔVon (∼ 0 V) of In0.96W0.04OC TFT was improved significantly compared to that (-0.5 V) of In0.98W0.02O TFT under the NBS of 5000 s. We concluded that the In1-xWxOC film is one of the promising candidates as InOx-based metal oxide semiconductor channel material.

AB - We studied characteristic of carbon-doped indium-tungsten-oxide (In1-xWxOC) thin film transistors (TFTs) with SiO2 gate insulator.The In1-xWxOC films, were fabricated by co-sputtering method with WC and In2O3 targets, had an amorphous structure and maintained W-C bond even after annealing at 300°C. The saturation field-effect mobility, on/off current ratio and subthreshold swing values of the In0.96W0.04OC TFT were 5.6 cm2/Vs, 1.0 × 109 and 0.52 V/decade, respectively. To effect of doped carbon in In1-xWxOC channel on reliability of transistor properties, we compared the turn on voltage shift (ΔVon) behavior between the In0.96W0.04OC and In0.98W0.02O TFTs under positive gate bias stress (PBS) and negative gate bias stress (NBS). The ΔVon of the In0.96W0.04OC TFT was always smaller than that of In0.98W0.02O TFT under PBS. Moreover, it is clear that the ΔVon (∼ 0 V) of In0.96W0.04OC TFT was improved significantly compared to that (-0.5 V) of In0.98W0.02O TFT under the NBS of 5000 s. We concluded that the In1-xWxOC film is one of the promising candidates as InOx-based metal oxide semiconductor channel material.

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