Pure dephasing induced by exciton-phonon interactions in GaAs quantum dots

Hailin Wang; Xudong Fan; T. Takagahara; J. E. Cunningham

Pure dephasing induced by exciton-phonon interactions in GaAs quantum dots

Hailin Wang, Xudong Fan, T. Takagahara, J. E. Cunningham

Research output: Contribution to conference › Paper › peer-review

Abstract

Using three-pulse transient four-wave mixing (FWM), exciton dephasing in quantum dot-like islands in narrow GaAs quantum wells (QW) was compared with population decay rates. Results reveal a pure dephasing process which dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing process arises from a mixing of excitonic states with a continuum of acoustic phonons and is enhanced by three-dimensional quantum confinement. The magnitude and temperature dependence of the pure dephasing rate is described by a theoretical model which generalizes the Huang-Rhys theory of F centers to include off-diagonal exciton-phonon coupling.

Original language	English
Pages	162-163
Number of pages	2
Publication status	Published - 1998 Jan 1
Externally published	Yes
Event	Proceedings of the 1998 International Quantum Electronics Conference - San Francisco, CA, USA Duration: 1998 May 3 → 1998 May 8

Other

Other	Proceedings of the 1998 International Quantum Electronics Conference
City	San Francisco, CA, USA
Period	98/5/3 → 98/5/8

ASJC Scopus subject areas

Physics and Astronomy(all)

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Cite this

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title = "Pure dephasing induced by exciton-phonon interactions in GaAs quantum dots",

abstract = "Using three-pulse transient four-wave mixing (FWM), exciton dephasing in quantum dot-like islands in narrow GaAs quantum wells (QW) was compared with population decay rates. Results reveal a pure dephasing process which dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing process arises from a mixing of excitonic states with a continuum of acoustic phonons and is enhanced by three-dimensional quantum confinement. The magnitude and temperature dependence of the pure dephasing rate is described by a theoretical model which generalizes the Huang-Rhys theory of F centers to include off-diagonal exciton-phonon coupling.",

author = "Hailin Wang and Xudong Fan and T. Takagahara and Cunningham, {J. E.}",

year = "1998",

month = jan,

day = "1",

language = "English",

pages = "162--163",

note = "Proceedings of the 1998 International Quantum Electronics Conference ; Conference date: 03-05-1998 Through 08-05-1998",

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TY - CONF

T1 - Pure dephasing induced by exciton-phonon interactions in GaAs quantum dots

AU - Wang, Hailin

AU - Fan, Xudong

AU - Takagahara, T.

AU - Cunningham, J. E.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Using three-pulse transient four-wave mixing (FWM), exciton dephasing in quantum dot-like islands in narrow GaAs quantum wells (QW) was compared with population decay rates. Results reveal a pure dephasing process which dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing process arises from a mixing of excitonic states with a continuum of acoustic phonons and is enhanced by three-dimensional quantum confinement. The magnitude and temperature dependence of the pure dephasing rate is described by a theoretical model which generalizes the Huang-Rhys theory of F centers to include off-diagonal exciton-phonon coupling.

AB - Using three-pulse transient four-wave mixing (FWM), exciton dephasing in quantum dot-like islands in narrow GaAs quantum wells (QW) was compared with population decay rates. Results reveal a pure dephasing process which dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing process arises from a mixing of excitonic states with a continuum of acoustic phonons and is enhanced by three-dimensional quantum confinement. The magnitude and temperature dependence of the pure dephasing rate is described by a theoretical model which generalizes the Huang-Rhys theory of F centers to include off-diagonal exciton-phonon coupling.

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M3 - Paper

AN - SCOPUS:0031701259

SP - 162

EP - 163

T2 - Proceedings of the 1998 International Quantum Electronics Conference

Y2 - 3 May 1998 through 8 May 1998

ER -