Abstract
Using three-pulse transient four-wave mixing (FWM), exciton dephasing in quantum dot-like islands in narrow GaAs quantum wells (QW) was compared with population decay rates. Results reveal a pure dephasing process which dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing process arises from a mixing of excitonic states with a continuum of acoustic phonons and is enhanced by three-dimensional quantum confinement. The magnitude and temperature dependence of the pure dephasing rate is described by a theoretical model which generalizes the Huang-Rhys theory of F centers to include off-diagonal exciton-phonon coupling.
| Original language | English |
|---|---|
| Pages | 162-163 |
| Number of pages | 2 |
| Publication status | Published - 1998 Jan 1 |
| Event | Proceedings of the 1998 International Quantum Electronics Conference - San Francisco, CA, USA Duration: 1998 May 3 → 1998 May 8 |
Other
| Other | Proceedings of the 1998 International Quantum Electronics Conference |
|---|---|
| City | San Francisco, CA, USA |
| Period | 98/5/3 → 98/5/8 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Wang, H., Fan, X., Takagahara, T., & Cunningham, J. E. (1998). Pure dephasing induced by exciton-phonon interactions in GaAs quantum dots. 162-163. Paper presented at Proceedings of the 1998 International Quantum Electronics Conference, San Francisco, CA, USA, .