Abstract
Using three-pulse transient four-wave mixing (FWM), exciton dephasing in quantum dot-like islands in narrow GaAs quantum wells (QW) was compared with population decay rates. Results reveal a pure dephasing process which dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing process arises from a mixing of excitonic states with a continuum of acoustic phonons and is enhanced by three-dimensional quantum confinement. The magnitude and temperature dependence of the pure dephasing rate is described by a theoretical model which generalizes the Huang-Rhys theory of F centers to include off-diagonal exciton-phonon coupling.
| Original language | English |
|---|---|
| Title of host publication | Technical Digest - European Quantum Electronics Conference |
| Editors | Anon |
| Publisher | IEEE |
| Pages | 162-163 |
| Number of pages | 2 |
| Publication status | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1998 International Quantum Electronics Conference - San Francisco, CA, USA Duration: 1998 May 3 → 1998 May 8 |
Other
| Other | Proceedings of the 1998 International Quantum Electronics Conference |
|---|---|
| City | San Francisco, CA, USA |
| Period | 98/5/3 → 98/5/8 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Pure dephasing induced by exciton-phonon interactions in GaAs quantum dots. / Wang, Hailin; Fan, Xudong; Takagahara, Toshihide; Cunningham, J. E.
Technical Digest - European Quantum Electronics Conference. ed. / Anon. IEEE, 1998. p. 162-163.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Pure dephasing induced by exciton-phonon interactions in GaAs quantum dots
AU - Wang, Hailin
AU - Fan, Xudong
AU - Takagahara, Toshihide
AU - Cunningham, J. E.
PY - 1998
Y1 - 1998
N2 - Using three-pulse transient four-wave mixing (FWM), exciton dephasing in quantum dot-like islands in narrow GaAs quantum wells (QW) was compared with population decay rates. Results reveal a pure dephasing process which dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing process arises from a mixing of excitonic states with a continuum of acoustic phonons and is enhanced by three-dimensional quantum confinement. The magnitude and temperature dependence of the pure dephasing rate is described by a theoretical model which generalizes the Huang-Rhys theory of F centers to include off-diagonal exciton-phonon coupling.
AB - Using three-pulse transient four-wave mixing (FWM), exciton dephasing in quantum dot-like islands in narrow GaAs quantum wells (QW) was compared with population decay rates. Results reveal a pure dephasing process which dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing process arises from a mixing of excitonic states with a continuum of acoustic phonons and is enhanced by three-dimensional quantum confinement. The magnitude and temperature dependence of the pure dephasing rate is described by a theoretical model which generalizes the Huang-Rhys theory of F centers to include off-diagonal exciton-phonon coupling.
UR - http://www.scopus.com/inward/record.url?scp=0031701259&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031701259&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0031701259
SP - 162
EP - 163
BT - Technical Digest - European Quantum Electronics Conference
A2 - Anon, null
PB - IEEE
ER -