Pure dephasing induced by exciton-phonon interactions in GaAs quantum dots

Hailin Wang, Xudong Fan, T. Takagahara, J. E. Cunningham

Research output: Contribution to conferencePaper

Abstract

Using three-pulse transient four-wave mixing (FWM), exciton dephasing in quantum dot-like islands in narrow GaAs quantum wells (QW) was compared with population decay rates. Results reveal a pure dephasing process which dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing process arises from a mixing of excitonic states with a continuum of acoustic phonons and is enhanced by three-dimensional quantum confinement. The magnitude and temperature dependence of the pure dephasing rate is described by a theoretical model which generalizes the Huang-Rhys theory of F centers to include off-diagonal exciton-phonon coupling.

Original languageEnglish
Pages162-163
Number of pages2
Publication statusPublished - 1998 Jan 1
Externally publishedYes
EventProceedings of the 1998 International Quantum Electronics Conference - San Francisco, CA, USA
Duration: 1998 May 31998 May 8

Other

OtherProceedings of the 1998 International Quantum Electronics Conference
CitySan Francisco, CA, USA
Period98/5/398/5/8

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Wang, H., Fan, X., Takagahara, T., & Cunningham, J. E. (1998). Pure dephasing induced by exciton-phonon interactions in GaAs quantum dots. 162-163. Paper presented at Proceedings of the 1998 International Quantum Electronics Conference, San Francisco, CA, USA, .