Pure dephasing induced by exciton-phonon interactions in narrow GaAs quantum wells

Xudong Fan, Toshihide Takagahara, J. E. Cunningham, Hailin Wang

Research output: Contribution to journalArticle

74 Citations (Scopus)

Abstract

We investigate both dephasing and population relaxation of excitons localized in quantum dot like islands in narrow GaAs quantum wells by using stimulated photon echoes. A direct comparison of these two closely related decay processes reveals a pure dephasing contribution that dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing contribution arises from coupling of excitonic states with a continuum of acoustic phonons and is enhanced by 3D quantum confinement. Both the magnitude and the temperature dependence of the pure dephasing rate can be described by a theoretical model that generalizes the Huang-Rhys theory of F-centers.

Original languageEnglish
Pages (from-to)857-861
Number of pages5
JournalSolid State Communications
Volume108
Issue number11
Publication statusPublished - 1998 Nov 13
Externally publishedYes

Fingerprint

Excitons
Semiconductor quantum wells
excitons
quantum wells
Quantum confinement
Phonons
color centers
Semiconductor quantum dots
echoes
phonons
Photons
Acoustics
quantum dots
interactions
continuums
Temperature
temperature dependence
acoustics
photons
decay

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Pure dephasing induced by exciton-phonon interactions in narrow GaAs quantum wells. / Fan, Xudong; Takagahara, Toshihide; Cunningham, J. E.; Wang, Hailin.

In: Solid State Communications, Vol. 108, No. 11, 13.11.1998, p. 857-861.

Research output: Contribution to journalArticle

Fan, Xudong ; Takagahara, Toshihide ; Cunningham, J. E. ; Wang, Hailin. / Pure dephasing induced by exciton-phonon interactions in narrow GaAs quantum wells. In: Solid State Communications. 1998 ; Vol. 108, No. 11. pp. 857-861.
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