Quantum decoherence of excited states in self assembled quantum dots

H. Htoon, D. Kulik, C. K. Shih, O. Baklenov, A. L. Holmes, Toshihide Takagahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Summary form only given. Semiconductor quantum dots (QDs) provide excellent ground to explore many fundamental physical phenomena. One of such phenomena is quantum coherence/decoherence of confined carriers which is critical for quantum information processing and other applications. Recently, such phenomena have been studied experimentally as well as theoretically in naturally formed quantum dot systems. On the other hand, for technologically more important self assembled quantum dots (SAQDs), various experimental and theoretical investigations indicate a much richer electronic structure and more complex inter-level energy relaxation mechanisms. We report on the investigation of photoluminescence spectra and dephasing times (T2) of various excited sates of hundreds of individual In0.5Ga0.5As SAQDs grown by molecular beam epitaxy.

Original languageEnglish
Title of host publicationTechnical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages20
Number of pages1
ISBN (Print)155752663X, 9781557526632
DOIs
Publication statusPublished - 2001
Externally publishedYes
EventQuantum Electronics and Laser Science Conference, QELS 2001 - Baltimore, United States
Duration: 2001 May 62001 May 11

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2001
CountryUnited States
CityBaltimore
Period01/5/601/5/11

Fingerprint

Excited states
Semiconductor quantum dots
quantum dots
excitation
Molecular beam epitaxy
Electron energy levels
Electronic structure
Photoluminescence
molecular beam epitaxy
energy levels
electronic structure
photoluminescence

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

Cite this

Htoon, H., Kulik, D., Shih, C. K., Baklenov, O., Holmes, A. L., & Takagahara, T. (2001). Quantum decoherence of excited states in self assembled quantum dots. In Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001 (pp. 20). [961794] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/QELS.2001.961794

Quantum decoherence of excited states in self assembled quantum dots. / Htoon, H.; Kulik, D.; Shih, C. K.; Baklenov, O.; Holmes, A. L.; Takagahara, Toshihide.

Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 20 961794.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Htoon, H, Kulik, D, Shih, CK, Baklenov, O, Holmes, AL & Takagahara, T 2001, Quantum decoherence of excited states in self assembled quantum dots. in Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001., 961794, Institute of Electrical and Electronics Engineers Inc., pp. 20, Quantum Electronics and Laser Science Conference, QELS 2001, Baltimore, United States, 01/5/6. https://doi.org/10.1109/QELS.2001.961794
Htoon H, Kulik D, Shih CK, Baklenov O, Holmes AL, Takagahara T. Quantum decoherence of excited states in self assembled quantum dots. In Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 20. 961794 https://doi.org/10.1109/QELS.2001.961794
Htoon, H. ; Kulik, D. ; Shih, C. K. ; Baklenov, O. ; Holmes, A. L. ; Takagahara, Toshihide. / Quantum decoherence of excited states in self assembled quantum dots. Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 20
@inproceedings{797e95555f624e8e9bed00859182d759,
title = "Quantum decoherence of excited states in self assembled quantum dots",
abstract = "Summary form only given. Semiconductor quantum dots (QDs) provide excellent ground to explore many fundamental physical phenomena. One of such phenomena is quantum coherence/decoherence of confined carriers which is critical for quantum information processing and other applications. Recently, such phenomena have been studied experimentally as well as theoretically in naturally formed quantum dot systems. On the other hand, for technologically more important self assembled quantum dots (SAQDs), various experimental and theoretical investigations indicate a much richer electronic structure and more complex inter-level energy relaxation mechanisms. We report on the investigation of photoluminescence spectra and dephasing times (T2) of various excited sates of hundreds of individual In0.5Ga0.5As SAQDs grown by molecular beam epitaxy.",
author = "H. Htoon and D. Kulik and Shih, {C. K.} and O. Baklenov and Holmes, {A. L.} and Toshihide Takagahara",
year = "2001",
doi = "10.1109/QELS.2001.961794",
language = "English",
isbn = "155752663X",
pages = "20",
booktitle = "Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Quantum decoherence of excited states in self assembled quantum dots

AU - Htoon, H.

AU - Kulik, D.

AU - Shih, C. K.

AU - Baklenov, O.

AU - Holmes, A. L.

AU - Takagahara, Toshihide

PY - 2001

Y1 - 2001

N2 - Summary form only given. Semiconductor quantum dots (QDs) provide excellent ground to explore many fundamental physical phenomena. One of such phenomena is quantum coherence/decoherence of confined carriers which is critical for quantum information processing and other applications. Recently, such phenomena have been studied experimentally as well as theoretically in naturally formed quantum dot systems. On the other hand, for technologically more important self assembled quantum dots (SAQDs), various experimental and theoretical investigations indicate a much richer electronic structure and more complex inter-level energy relaxation mechanisms. We report on the investigation of photoluminescence spectra and dephasing times (T2) of various excited sates of hundreds of individual In0.5Ga0.5As SAQDs grown by molecular beam epitaxy.

AB - Summary form only given. Semiconductor quantum dots (QDs) provide excellent ground to explore many fundamental physical phenomena. One of such phenomena is quantum coherence/decoherence of confined carriers which is critical for quantum information processing and other applications. Recently, such phenomena have been studied experimentally as well as theoretically in naturally formed quantum dot systems. On the other hand, for technologically more important self assembled quantum dots (SAQDs), various experimental and theoretical investigations indicate a much richer electronic structure and more complex inter-level energy relaxation mechanisms. We report on the investigation of photoluminescence spectra and dephasing times (T2) of various excited sates of hundreds of individual In0.5Ga0.5As SAQDs grown by molecular beam epitaxy.

UR - http://www.scopus.com/inward/record.url?scp=84958292345&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958292345&partnerID=8YFLogxK

U2 - 10.1109/QELS.2001.961794

DO - 10.1109/QELS.2001.961794

M3 - Conference contribution

AN - SCOPUS:84958292345

SN - 155752663X

SN - 9781557526632

SP - 20

BT - Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001

PB - Institute of Electrical and Electronics Engineers Inc.

ER -