Quantum decoherence of excited states in self assembled quantum dots

H. Htoon; D. Kulik; C. K. Shih; O. Baklenov; A. L. Holmes; Toshihide Takagahara

doi:10.1109/QELS.2001.961794

Quantum decoherence of excited states in self assembled quantum dots

H. Htoon, D. Kulik, C. K. Shih, O. Baklenov, A. L. Holmes, Toshihide Takagahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Summary form only given. Semiconductor quantum dots (QDs) provide excellent ground to explore many fundamental physical phenomena. One of such phenomena is quantum coherence/decoherence of confined carriers which is critical for quantum information processing and other applications. Recently, such phenomena have been studied experimentally as well as theoretically in naturally formed quantum dot systems. On the other hand, for technologically more important self assembled quantum dots (SAQDs), various experimental and theoretical investigations indicate a much richer electronic structure and more complex inter-level energy relaxation mechanisms. We report on the investigation of photoluminescence spectra and dephasing times (T₂) of various excited sates of hundreds of individual In_0.5Ga_0.5As SAQDs grown by molecular beam epitaxy.

Original language	English
Title of host publication	Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	20
Number of pages	1
ISBN (Print)	155752663X, 9781557526632
DOIs	https://doi.org/10.1109/QELS.2001.961794
Publication status	Published - 2001
Externally published	Yes
Event	Quantum Electronics and Laser Science Conference, QELS 2001 - Baltimore, United States Duration: 2001 May 6 → 2001 May 11

Other

Other	Quantum Electronics and Laser Science Conference, QELS 2001
Country/Territory	United States
City	Baltimore
Period	01/5/6 → 01/5/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Radiation

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10.1109/QELS.2001.961794

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Htoon, H., Kulik, D., Shih, C. K., Baklenov, O., Holmes, A. L., & Takagahara, T. (2001). Quantum decoherence of excited states in self assembled quantum dots. In Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001 (pp. 20). [961794] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/QELS.2001.961794

Quantum decoherence of excited states in self assembled quantum dots. / Htoon, H.; Kulik, D.; Shih, C. K. et al.

Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 20 961794.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Htoon, H, Kulik, D, Shih, CK, Baklenov, O, Holmes, AL & Takagahara, T 2001, Quantum decoherence of excited states in self assembled quantum dots. in Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001., 961794, Institute of Electrical and Electronics Engineers Inc., pp. 20, Quantum Electronics and Laser Science Conference, QELS 2001, Baltimore, United States, 01/5/6. https://doi.org/10.1109/QELS.2001.961794

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abstract = "Summary form only given. Semiconductor quantum dots (QDs) provide excellent ground to explore many fundamental physical phenomena. One of such phenomena is quantum coherence/decoherence of confined carriers which is critical for quantum information processing and other applications. Recently, such phenomena have been studied experimentally as well as theoretically in naturally formed quantum dot systems. On the other hand, for technologically more important self assembled quantum dots (SAQDs), various experimental and theoretical investigations indicate a much richer electronic structure and more complex inter-level energy relaxation mechanisms. We report on the investigation of photoluminescence spectra and dephasing times (T2) of various excited sates of hundreds of individual In0.5Ga0.5As SAQDs grown by molecular beam epitaxy.",

author = "H. Htoon and D. Kulik and Shih, {C. K.} and O. Baklenov and Holmes, {A. L.} and Toshihide Takagahara",

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AU - Htoon, H.

AU - Kulik, D.

AU - Shih, C. K.

AU - Baklenov, O.

AU - Holmes, A. L.

AU - Takagahara, Toshihide

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N2 - Summary form only given. Semiconductor quantum dots (QDs) provide excellent ground to explore many fundamental physical phenomena. One of such phenomena is quantum coherence/decoherence of confined carriers which is critical for quantum information processing and other applications. Recently, such phenomena have been studied experimentally as well as theoretically in naturally formed quantum dot systems. On the other hand, for technologically more important self assembled quantum dots (SAQDs), various experimental and theoretical investigations indicate a much richer electronic structure and more complex inter-level energy relaxation mechanisms. We report on the investigation of photoluminescence spectra and dephasing times (T2) of various excited sates of hundreds of individual In0.5Ga0.5As SAQDs grown by molecular beam epitaxy.

AB - Summary form only given. Semiconductor quantum dots (QDs) provide excellent ground to explore many fundamental physical phenomena. One of such phenomena is quantum coherence/decoherence of confined carriers which is critical for quantum information processing and other applications. Recently, such phenomena have been studied experimentally as well as theoretically in naturally formed quantum dot systems. On the other hand, for technologically more important self assembled quantum dots (SAQDs), various experimental and theoretical investigations indicate a much richer electronic structure and more complex inter-level energy relaxation mechanisms. We report on the investigation of photoluminescence spectra and dephasing times (T2) of various excited sates of hundreds of individual In0.5Ga0.5As SAQDs grown by molecular beam epitaxy.

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Quantum decoherence of excited states in self assembled quantum dots

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