Quantum wells with enhanced exciton effects and optical non-linearity

Eiichi Hanamura, Naoto Nagaosa, Masami Kumagai, Toshihide Takagahara

Research output: Contribution to journalArticle

87 Citations (Scopus)

Abstract

Exciton effects are studied theoretically for a quantum well of a semiconductor sandwiched by barriers with a smaller dielectric constant and a larger energy gap. The exciton binding energy increases markedly so that the radiative decay rate of the exciton and the non-linear optical susceptibility are also shown to be enhanced.

Original languageEnglish
Pages (from-to)255-258
Number of pages4
JournalMaterials Science and Engineering B
Volume1
Issue number3-4
DOIs
Publication statusPublished - 1988
Externally publishedYes

Fingerprint

Excitons
Semiconductor quantum wells
nonlinearity
excitons
quantum wells
Binding energy
decay rates
Energy gap
Permittivity
binding energy
permittivity
Semiconductor materials
magnetic permeability
LDS 751

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Engineering(all)

Cite this

Quantum wells with enhanced exciton effects and optical non-linearity. / Hanamura, Eiichi; Nagaosa, Naoto; Kumagai, Masami; Takagahara, Toshihide.

In: Materials Science and Engineering B, Vol. 1, No. 3-4, 1988, p. 255-258.

Research output: Contribution to journalArticle

Hanamura, Eiichi ; Nagaosa, Naoto ; Kumagai, Masami ; Takagahara, Toshihide. / Quantum wells with enhanced exciton effects and optical non-linearity. In: Materials Science and Engineering B. 1988 ; Vol. 1, No. 3-4. pp. 255-258.
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