Raman spectra of GaPAs-GaP heterostructure waveguides

T. Tanabe, K. Suto, T. Kimura, T. Ohtani, J. Nishizawa

Research output: Contribution to journalArticle

Abstract

A GaPAs waveguide with GaP cladding layers, has been fabricated in only two steps of LPE growth. One-way optical loss of the fabricated GaPAs-GaP waveguide is 12% mm-1 (α = 1.9 cm-1). The free carrier concentration of the GaPAs layer is 1 × 1016 cm -3 (α = 0.05 cm-1). The backward spontaneous Raman spectrum from the GaPAs waveguide shows a GaP-like longitudinal optical (LO) phonon line. The LO band is intensified and shifted to a higher frequency compared to the LO phonon of GaP bulk crystal.

Original languageEnglish
Pages (from-to)445-447
Number of pages3
JournalMaterials Science in Semiconductor Processing
Volume6
Issue number5-6
DOIs
Publication statusPublished - 2003 Oct
Externally publishedYes

Keywords

  • GaPAs
  • Optical waveguide
  • Phonon
  • Raman amplifier

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Raman spectra of GaPAs-GaP heterostructure waveguides'. Together they form a unique fingerprint.

  • Cite this