Raman spectroscopic study of femtosecond laser-induced phase transformation associated with ripple formation on single-crystal SiC

Makoto Yamaguchi, Shigeru Ueno, Ryota Kumai, Keita Kinoshita, Toshiaki Murai, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto

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Raman spectroscopy was performed to investigate microscopic structural changes associated with a ripple structure formation initiated by femtosecond laser irradiation on the surface of single-crystal silicon carbide. The amorphous phases of silicon carbide, silicon, and carbon were observed. The intensity ratio between amorphous silicon carbide and silicon changed discretely at the boundary between fine and coarse ripples. The physical processes responsible for the formation of the ripple structure are discussed.

Original languageEnglish
Pages (from-to)23-27
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Issue number1
Publication statusPublished - 2010 Apr 1


ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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