Raman spectroscopy of carbon doped MgB2 prepared using carbon encapsulated boron as precursor

Dinesh Kumar, M. Muralidhar, Masaki Higuchi, M. S. Ramachandra Rao, Masato Murakami

Research output: Research - peer-reviewArticle

Abstract

We have studied the surface topographical changes and the Raman spectroscopic modifications for carbon-doped MgB2 that was fabricated with carbon-encapsulated boron as precursor. Bulk MgB2 samples of 20 mm diameter and 7 mm thickness were prepared by an in-situ one-step solid state sintering technique. It was found that optimum doping led to the reduction of the average grain size, which was then effective in enhancing flux pinning in MgB2. For the optimum doped sample, the self-field critical current density Jc at 20 K reached 375 kA/cm2. However, Tc values were suppressed with further carbon doping, presumably due to an increase in the disorder in the system, which was demonstrated by a decrease in full width and half maxima of the E2g mode in the Raman spectra.

LanguageEnglish
Pages751-756
Number of pages6
JournalJournal of Alloys and Compounds
Volume723
DOIs
StatePublished - 2017

Fingerprint

Boron
Raman spectroscopy
Carbon
Doping (additives)
Flux pinning
Raman scattering
Sintering

Keywords

  • Carbon encapsulated boron
  • Critical current density
  • Raman spectroscopy

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Raman spectroscopy of carbon doped MgB2 prepared using carbon encapsulated boron as precursor. / Kumar, Dinesh; Muralidhar, M.; Higuchi, Masaki; Ramachandra Rao, M. S.; Murakami, Masato.

In: Journal of Alloys and Compounds, Vol. 723, 2017, p. 751-756.

Research output: Research - peer-reviewArticle

@article{be77789afd5b4e1bb41f0fb135d4dcb6,
title = "Raman spectroscopy of carbon doped MgB2 prepared using carbon encapsulated boron as precursor",
abstract = "We have studied the surface topographical changes and the Raman spectroscopic modifications for carbon-doped MgB2 that was fabricated with carbon-encapsulated boron as precursor. Bulk MgB2 samples of 20 mm diameter and 7 mm thickness were prepared by an in-situ one-step solid state sintering technique. It was found that optimum doping led to the reduction of the average grain size, which was then effective in enhancing flux pinning in MgB2. For the optimum doped sample, the self-field critical current density Jc at 20 K reached 375 kA/cm2. However, Tc values were suppressed with further carbon doping, presumably due to an increase in the disorder in the system, which was demonstrated by a decrease in full width and half maxima of the E2g mode in the Raman spectra.",
keywords = "Carbon encapsulated boron, Critical current density, Raman spectroscopy",
author = "Dinesh Kumar and M. Muralidhar and Masaki Higuchi and {Ramachandra Rao}, {M. S.} and Masato Murakami",
year = "2017",
doi = "10.1016/j.jallcom.2017.06.081",
volume = "723",
pages = "751--756",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",

}

TY - JOUR

T1 - Raman spectroscopy of carbon doped MgB2 prepared using carbon encapsulated boron as precursor

AU - Kumar,Dinesh

AU - Muralidhar,M.

AU - Higuchi,Masaki

AU - Ramachandra Rao,M. S.

AU - Murakami,Masato

PY - 2017

Y1 - 2017

N2 - We have studied the surface topographical changes and the Raman spectroscopic modifications for carbon-doped MgB2 that was fabricated with carbon-encapsulated boron as precursor. Bulk MgB2 samples of 20 mm diameter and 7 mm thickness were prepared by an in-situ one-step solid state sintering technique. It was found that optimum doping led to the reduction of the average grain size, which was then effective in enhancing flux pinning in MgB2. For the optimum doped sample, the self-field critical current density Jc at 20 K reached 375 kA/cm2. However, Tc values were suppressed with further carbon doping, presumably due to an increase in the disorder in the system, which was demonstrated by a decrease in full width and half maxima of the E2g mode in the Raman spectra.

AB - We have studied the surface topographical changes and the Raman spectroscopic modifications for carbon-doped MgB2 that was fabricated with carbon-encapsulated boron as precursor. Bulk MgB2 samples of 20 mm diameter and 7 mm thickness were prepared by an in-situ one-step solid state sintering technique. It was found that optimum doping led to the reduction of the average grain size, which was then effective in enhancing flux pinning in MgB2. For the optimum doped sample, the self-field critical current density Jc at 20 K reached 375 kA/cm2. However, Tc values were suppressed with further carbon doping, presumably due to an increase in the disorder in the system, which was demonstrated by a decrease in full width and half maxima of the E2g mode in the Raman spectra.

KW - Carbon encapsulated boron

KW - Critical current density

KW - Raman spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85021390898&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85021390898&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2017.06.081

DO - 10.1016/j.jallcom.2017.06.081

M3 - Article

VL - 723

SP - 751

EP - 756

JO - Journal of Alloys and Compounds

T2 - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

ER -