Re-Examination on the Universality of Si-MOS Inversion Layer Mobility

H. Irie, K. Kita, K. Kyuno, S. Takagi, K. Takasaki, M. Kubota, S. Saito, S. Nishikawa, A. Toriumi

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)716-717
JournalExtended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)
Publication statusPublished - 2003 Sep 1

Cite this

Irie, H., Kita, K., Kyuno, K., Takagi, S., Takasaki, K., Kubota, M., Saito, S., Nishikawa, S., & Toriumi, A. (2003). Re-Examination on the Universality of Si-MOS Inversion Layer Mobility. Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM), 716-717.