Re-Examination on the Universality of Si-MOS Inversion Layer Mobility

H. Irie, K. Kita, K. Kyuno, S. Takagi, K. Takasaki, M. Kubota, S. Saito, S. Nishikawa, A. Toriumi

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)716-717
JournalExtended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)
Publication statusPublished - 2003 Sep 1

Cite this

Re-Examination on the Universality of Si-MOS Inversion Layer Mobility. / Irie, H.; Kita, K.; Kyuno, K.; Takagi, S.; Takasaki, K.; Kubota, M.; Saito, S.; Nishikawa, S.; Toriumi, A.

In: Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM), 01.09.2003, p. 716-717.

Research output: Contribution to journalArticle

Irie, H. ; Kita, K. ; Kyuno, K. ; Takagi, S. ; Takasaki, K. ; Kubota, M. ; Saito, S. ; Nishikawa, S. ; Toriumi, A. / Re-Examination on the Universality of Si-MOS Inversion Layer Mobility. In: Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM). 2003 ; pp. 716-717.
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