Re-Investigation of MOS Inversion Layer Mobility from Non-Universality and Possible New Scattering Mechanism Aspects

Hiroshi Irie, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journalConference article

Abstract

This paper reports a systematic re-investigation of the universality of MOS inversion layer mobility through a careful measurement. We demonstrate for the first time that the definition of the effective normal field for characterizing the universality is variable with the normal electric field, temperature, and substrate doping concentration. In addition, we propose that another new scattering mechanism should be involved to explain the mobility behavior around 100K.

Original languageEnglish
Pages (from-to)459-462
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2003 Dec 1
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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