Re-Investigation of MOS Inversion Layer Mobility from Non-Universality and Possible New Scattering Mechanism Aspects

Hiroshi Irie, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

This paper reports a systematic re-investigation of the universality of MOS inversion layer mobility through a careful measurement. We demonstrate for the first time that the definition of the effective normal field for characterizing the universality is variable with the normal electric field, temperature, and substrate doping concentration. In addition, we propose that another new scattering mechanism should be involved to explain the mobility behavior around 100K.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Pages459-462
Number of pages4
Publication statusPublished - 2003
Externally publishedYes
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

Other

OtherIEEE International Electron Devices Meeting
CountryUnited States
CityWashington, DC
Period03/12/803/12/10

Fingerprint

Inversion layers
Electric fields
Doping (additives)
Scattering
Substrates
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Irie, H., Kita, K., Kyuno, K., & Toriumi, A. (2003). Re-Investigation of MOS Inversion Layer Mobility from Non-Universality and Possible New Scattering Mechanism Aspects. In Technical Digest - International Electron Devices Meeting (pp. 459-462)

Re-Investigation of MOS Inversion Layer Mobility from Non-Universality and Possible New Scattering Mechanism Aspects. / Irie, Hiroshi; Kita, Koji; Kyuno, Kentaro; Toriumi, Akira.

Technical Digest - International Electron Devices Meeting. 2003. p. 459-462.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Irie, H, Kita, K, Kyuno, K & Toriumi, A 2003, Re-Investigation of MOS Inversion Layer Mobility from Non-Universality and Possible New Scattering Mechanism Aspects. in Technical Digest - International Electron Devices Meeting. pp. 459-462, IEEE International Electron Devices Meeting, Washington, DC, United States, 03/12/8.
Irie H, Kita K, Kyuno K, Toriumi A. Re-Investigation of MOS Inversion Layer Mobility from Non-Universality and Possible New Scattering Mechanism Aspects. In Technical Digest - International Electron Devices Meeting. 2003. p. 459-462
Irie, Hiroshi ; Kita, Koji ; Kyuno, Kentaro ; Toriumi, Akira. / Re-Investigation of MOS Inversion Layer Mobility from Non-Universality and Possible New Scattering Mechanism Aspects. Technical Digest - International Electron Devices Meeting. 2003. pp. 459-462
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