Abstract
For the development of an advanced fabrication process aimed for nano-structured coating, a combination process of ion beam sputtering (IBS) and ion implantation has been conducted on Ti-X-N films. Non-equilibrium Ti-V and Ti-Si films have been prepared by IBS, and then followed by N+ implantation into the films to investigate low-temperature reaction-induced nano-phase separation in ternary Ti-V-N and Ti-Si-N systems. Ti-12 at.% V and Ti-20 at.% Si have been deposited on (001)Si substrate with thickness 150 nm by IBS. The structural change due to the N-implantation has been evaluated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) measurements. The cross-sectional TEM images of the as-deposited films respectively show nano-crystalline bcc Ti-V and amorphous Ti-Si. N-implantation with a dose of 5.0 × 1017 ion/cm2 induces affected zones consisting of equi-axed grains on the surface of the Ti-Si and Ti-V films. The selected area diffraction pattern (SAED) from the affected zone shows the direct formation of fcc-TiN during N-implantation. The N concentration has been measured by the XPS depth profiling. The N concentration in Ti-V and Ti-Si films are ∼30 at.% N average and 60 at.% N maximum. The compositional gradient of N against the depth of the film suggested that the introduction of equi-axed grains was mainly due to the chemical reaction of Ti-N in proportion to the N concentration. The decreasing of Si concentration in Ti-Si film during N-implantation suggests that the segregation of Si might simultaneously occur with the preferential nitriding of Ti. The structural difference between N-implanted Ti-V and Ti-Si is mainly attributed to the difference in miscibility of V and Si into TiN.
| Original language | English |
|---|---|
| Pages (from-to) | 431-434 |
| Number of pages | 4 |
| Journal | Surface and Coatings Technology |
| Volume | 188-189 |
| Issue number | 1-3 SPEC.ISS. |
| DOIs | |
| Publication status | Published - 2004 Nov |
| Externally published | Yes |
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Keywords
- Ion implantation
- Nano-structure
- Phase separation
- TEM
- XPS
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
Reaction-induced phase separation from supersaturated solid solution to nitride in thin films. / Muraishi, S.; Aizawa, T.; Kuwahara, H.
In: Surface and Coatings Technology, Vol. 188-189, No. 1-3 SPEC.ISS., 11.2004, p. 431-434.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Reaction-induced phase separation from supersaturated solid solution to nitride in thin films
AU - Muraishi, S.
AU - Aizawa, T.
AU - Kuwahara, H.
PY - 2004/11
Y1 - 2004/11
N2 - For the development of an advanced fabrication process aimed for nano-structured coating, a combination process of ion beam sputtering (IBS) and ion implantation has been conducted on Ti-X-N films. Non-equilibrium Ti-V and Ti-Si films have been prepared by IBS, and then followed by N+ implantation into the films to investigate low-temperature reaction-induced nano-phase separation in ternary Ti-V-N and Ti-Si-N systems. Ti-12 at.% V and Ti-20 at.% Si have been deposited on (001)Si substrate with thickness 150 nm by IBS. The structural change due to the N-implantation has been evaluated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) measurements. The cross-sectional TEM images of the as-deposited films respectively show nano-crystalline bcc Ti-V and amorphous Ti-Si. N-implantation with a dose of 5.0 × 1017 ion/cm2 induces affected zones consisting of equi-axed grains on the surface of the Ti-Si and Ti-V films. The selected area diffraction pattern (SAED) from the affected zone shows the direct formation of fcc-TiN during N-implantation. The N concentration has been measured by the XPS depth profiling. The N concentration in Ti-V and Ti-Si films are ∼30 at.% N average and 60 at.% N maximum. The compositional gradient of N against the depth of the film suggested that the introduction of equi-axed grains was mainly due to the chemical reaction of Ti-N in proportion to the N concentration. The decreasing of Si concentration in Ti-Si film during N-implantation suggests that the segregation of Si might simultaneously occur with the preferential nitriding of Ti. The structural difference between N-implanted Ti-V and Ti-Si is mainly attributed to the difference in miscibility of V and Si into TiN.
AB - For the development of an advanced fabrication process aimed for nano-structured coating, a combination process of ion beam sputtering (IBS) and ion implantation has been conducted on Ti-X-N films. Non-equilibrium Ti-V and Ti-Si films have been prepared by IBS, and then followed by N+ implantation into the films to investigate low-temperature reaction-induced nano-phase separation in ternary Ti-V-N and Ti-Si-N systems. Ti-12 at.% V and Ti-20 at.% Si have been deposited on (001)Si substrate with thickness 150 nm by IBS. The structural change due to the N-implantation has been evaluated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) measurements. The cross-sectional TEM images of the as-deposited films respectively show nano-crystalline bcc Ti-V and amorphous Ti-Si. N-implantation with a dose of 5.0 × 1017 ion/cm2 induces affected zones consisting of equi-axed grains on the surface of the Ti-Si and Ti-V films. The selected area diffraction pattern (SAED) from the affected zone shows the direct formation of fcc-TiN during N-implantation. The N concentration has been measured by the XPS depth profiling. The N concentration in Ti-V and Ti-Si films are ∼30 at.% N average and 60 at.% N maximum. The compositional gradient of N against the depth of the film suggested that the introduction of equi-axed grains was mainly due to the chemical reaction of Ti-N in proportion to the N concentration. The decreasing of Si concentration in Ti-Si film during N-implantation suggests that the segregation of Si might simultaneously occur with the preferential nitriding of Ti. The structural difference between N-implanted Ti-V and Ti-Si is mainly attributed to the difference in miscibility of V and Si into TiN.
KW - Ion implantation
KW - Nano-structure
KW - Phase separation
KW - TEM
KW - XPS
UR - http://www.scopus.com/inward/record.url?scp=14644399249&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=14644399249&partnerID=8YFLogxK
U2 - 10.1016/j.surfcoat.2004.08.046
DO - 10.1016/j.surfcoat.2004.08.046
M3 - Article
AN - SCOPUS:14644399249
VL - 188-189
SP - 431
EP - 434
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
SN - 0257-8972
IS - 1-3 SPEC.ISS.
ER -