Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition

K.Ueno K.Ueno, K.Tokashiki K.Tokashiki, T.Kikkawa T.Kikkawa, Kazuyoshi Ueno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1447-1450
JournalJournal of Vacuum Science and Technology
VolumeB13
Publication statusPublished - 1995 Jul 1

Cite this

Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition. / K.Ueno, K.Ueno; K.Tokashiki, K.Tokashiki; T.Kikkawa, T.Kikkawa; Ueno, Kazuyoshi.

In: Journal of Vacuum Science and Technology, Vol. B13, 01.07.1995, p. 1447-1450.

Research output: Contribution to journalArticle

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