Original language | English |
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Pages (from-to) | 1447-1450 |
Journal | Journal of Vacuum Science and Technology |
Volume | B13 |
Publication status | Published - 1995 Jul 1 |
Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition
K.Ueno K.Ueno, K.Tokashiki K.Tokashiki, T.Kikkawa T.Kikkawa, Kazuyoshi Ueno
Research output: Contribution to journal › Article › peer-review