| Original language | English |
|---|---|
| Pages (from-to) | 1447-1450 |
| Journal | Journal of Vacuum Science and Technology |
| Volume | B13 |
| Publication status | Published - 1995 Jul 1 |
Cite this
K.Ueno, K. U., K.Tokashiki, K. T., T.Kikkawa, T. K., & Ueno, K. (1995). Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition. Journal of Vacuum Science and Technology, B13, 1447-1450.
Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition. / K.Ueno, K.Ueno; K.Tokashiki, K.Tokashiki; T.Kikkawa, T.Kikkawa; Ueno, Kazuyoshi.
In: Journal of Vacuum Science and Technology, Vol. B13, 01.07.1995, p. 1447-1450.Research output: Contribution to journal › Article
K.Ueno, KU, K.Tokashiki, KT, T.Kikkawa, TK & Ueno, K 1995, 'Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition', Journal of Vacuum Science and Technology, vol. B13, pp. 1447-1450.
K.Ueno KU, K.Tokashiki KT, T.Kikkawa TK, Ueno K. Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition. Journal of Vacuum Science and Technology. 1995 Jul 1;B13:1447-1450.
@article{02aeebb3a81545d8a1b47ceb5e9b1a12,
title = "Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition",
author = "K.Ueno K.Ueno and K.Tokashiki K.Tokashiki and T.Kikkawa T.Kikkawa and Kazuyoshi Ueno",
year = "1995",
month = "7",
day = "1",
language = "English",
volume = "B13",
pages = "1447--1450",
journal = "Journal of Vacuum Science and Technology",
}
TY - JOUR
T1 - Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition
AU - K.Ueno, K.Ueno
AU - K.Tokashiki, K.Tokashiki
AU - T.Kikkawa, T.Kikkawa
AU - Ueno, Kazuyoshi
PY - 1995/7/1
Y1 - 1995/7/1
M3 - Article
VL - B13
SP - 1447
EP - 1450
JO - Journal of Vacuum Science and Technology
JF - Journal of Vacuum Science and Technology
ER -