Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition

K.Ueno K.Ueno, K.Tokashiki K.Tokashiki, T.Kikkawa T.Kikkawa, Kazuyoshi Ueno

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	1447-1450
Journal	Journal of Vacuum Science and Technology
Volume	B13
Publication status	Published - 1995 Jul 1

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title = "Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition",

author = "K.Ueno K.Ueno and K.Tokashiki K.Tokashiki and T.Kikkawa T.Kikkawa and Kazuyoshi Ueno",

year = "1995",

month = "7",

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language = "English",

volume = "B13",

pages = "1447--1450",

journal = "Journal of Vacuum Science and Technology",

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T1 - Reactive ion etch characteristics of silicon oxynitride formed plasma enhanced chemical vapor deposition

AU - K.Ueno, K.Ueno

AU - K.Tokashiki, K.Tokashiki

AU - T.Kikkawa, T.Kikkawa

AU - Ueno, Kazuyoshi

PY - 1995/7/1

Y1 - 1995/7/1

M3 - Article

VL - B13

SP - 1447

EP - 1450

JO - Journal of Vacuum Science and Technology

JF - Journal of Vacuum Science and Technology

ER -