Reactive ion etching of silicon oxynitride formed by plasma-enhanced chemical vapor deposition

Kazuyoshi Ueno, Takamaro Kikkawa, Ken Tokashiki

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A variation in the reactive ion etch (RIE) rate of silicon oxynitride (SiOxNy) films deposited by plasma-enhanced chemical vapor deposition was studied by CHF3 RIE, CHF3 + carbon mono-oxide (CO) RIE and CF4 RIE. The source gas flow rate ratio (R = N2O/SiH4) during the SiOxNy film deposition was varied to obtain a film of different atomic composition. Etch rates decreased in the order of CF4 RIE, CHF3 RIE, and CHF3 + CO RIE, and the etch selectivity of SiO2 over SiOxNy increased in the same order also. The fluorocarbon (CFx) film deposited during a RIE process was analyzed by x-ray photoelectron spectroscopy measurements. Etch rates are found to be correlated to both thickness and atomic composition of the CFx film. Carbon-rich fluorocarbon films are found to be more resistive against RIE.

Original languageEnglish
Pages (from-to)1447-1450
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume13
Issue number4
DOIs
Publication statusPublished - 1995 Jul
Externally publishedYes

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Reactive ion etching
Plasma enhanced chemical vapor deposition
Silicon
Ions
Fluorocarbons
Carbon
Oxides
Photoelectron spectroscopy
Chemical analysis
Flow of gases
Flow rate
X rays

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Reactive ion etching of silicon oxynitride formed by plasma-enhanced chemical vapor deposition. / Ueno, Kazuyoshi; Kikkawa, Takamaro; Tokashiki, Ken.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 4, 07.1995, p. 1447-1450.

Research output: Contribution to journalArticle

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