Realization of normally-off quaternary AlInGaN/GaN HEMT on sapphire substrate

Y. Liu, T. Egawa, H. Jiang, M. Hayashi, H. Ishikawa

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)MoP2-55
JournalDefault journal
Publication statusPublished - 2006 Oct 1

Cite this

Realization of normally-off quaternary AlInGaN/GaN HEMT on sapphire substrate. / Liu, Y.; Egawa, T.; Jiang, H.; Hayashi, M.; Ishikawa, H.

In: Default journal, 01.10.2006, p. MoP2-55.

Research output: Contribution to journalArticle

Liu, Y. ; Egawa, T. ; Jiang, H. ; Hayashi, M. ; Ishikawa, H. / Realization of normally-off quaternary AlInGaN/GaN HEMT on sapphire substrate. In: Default journal. 2006 ; pp. MoP2-55.
@article{cb9eeec91b7b45729773e78ae0967ecd,
title = "Realization of normally-off quaternary AlInGaN/GaN HEMT on sapphire substrate",
author = "Y. Liu and T. Egawa and H. Jiang and M. Hayashi and H. Ishikawa",
year = "2006",
month = "10",
day = "1",
language = "English",
pages = "MoP2--55",
journal = "Default journal",

}

TY - JOUR

T1 - Realization of normally-off quaternary AlInGaN/GaN HEMT on sapphire substrate

AU - Liu, Y.

AU - Egawa, T.

AU - Jiang, H.

AU - Hayashi, M.

AU - Ishikawa, H.

PY - 2006/10/1

Y1 - 2006/10/1

M3 - Article

SP - MoP2-55

JO - Default journal

JF - Default journal

ER -