| Original language | English |
|---|---|
| Pages (from-to) | MoP2-55 |
| Journal | Default journal |
| Publication status | Published - 2006 Oct 1 |
Realization of normally-off quaternary AlInGaN/GaN HEMT on sapphire substrate
Y. Liu, T. Egawa, H. Jiang, M. Hayashi, H. Ishikawa
Research output: Contribution to journal › Article › peer-review