Realizing high thermoelectric performance in p-type Si1-x-yGexSnythin films at ambient temperature by Sn modulation doping

Ying Peng; Huajun Lai; Chengyan Liu; Jie Gao; Masashi Kurosawa; Osamu Nakatsuka; Tsunehiro Takeuchi; Shigeaki Zaima; Sakae Tanemura; Lei Miao

doi:10.1063/5.0012087

Realizing high thermoelectric performance in p-type Si_1-x-yGe_xSn_ythin films at ambient temperature by Sn modulation doping

Ying Peng, Huajun Lai, Chengyan Liu, Jie Gao, Masashi Kurosawa, Osamu Nakatsuka, Tsunehiro Takeuchi, Shigeaki Zaima, Sakae Tanemura, Lei Miao

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this study, we report a power factor (PF) value as high as 1950 μW m-1 K-2 for B-ion implanted thermoelectric Si1-x-yGexSny ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si1-x-yGexSny film. It was found that using metallic Sn as nanoparticles and Si1-x-yGexSny as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si1-x-yGexSny alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature.

Original language	English
Article number	053903
Journal	Applied Physics Letters
Volume	117
Issue number	5
DOIs	https://doi.org/10.1063/5.0012087
Publication status	Published - 2020 Aug 3

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Realizing high thermoelectric performance in p-type Si_1-x-yGe_xSn_ythin films at ambient temperature by Sn modulation doping. / Peng, Ying; Lai, Huajun; Liu, Chengyan; Gao, Jie; Kurosawa, Masashi; Nakatsuka, Osamu; Takeuchi, Tsunehiro; Zaima, Shigeaki; Tanemura, Sakae; Miao, Lei.

In: Applied Physics Letters, Vol. 117, No. 5, 053903, 03.08.2020.

Research output: Contribution to journal › Article › peer-review

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abstract = "In this study, we report a power factor (PF) value as high as 1950 μW m-1 K-2 for B-ion implanted thermoelectric Si1-x-yGexSny ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si1-x-yGexSny film. It was found that using metallic Sn as nanoparticles and Si1-x-yGexSny as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si1-x-yGexSny alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature. ",

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AU - Kurosawa, Masashi

AU - Nakatsuka, Osamu

AU - Takeuchi, Tsunehiro

AU - Zaima, Shigeaki

AU - Tanemura, Sakae

AU - Miao, Lei

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