Abstract
In this study, we report a power factor (PF) value as high as 1950 μW m-1 K-2 for B-ion implanted thermoelectric Si1-x-yGexSny ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si1-x-yGexSny film. It was found that using metallic Sn as nanoparticles and Si1-x-yGexSny as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si1-x-yGexSny alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature.
Original language | English |
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Article number | 053903 |
Journal | Applied Physics Letters |
Volume | 117 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2020 Aug 3 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)