Realizing high thermoelectric performance in p-type Si1-x-yGexSnythin films at ambient temperature by Sn modulation doping

Ying Peng; Huajun Lai; Chengyan Liu; Jie Gao; Masashi Kurosawa; Osamu Nakatsuka; Tsunehiro Takeuchi; Shigeaki Zaima; Sakae Tanemura; Lei Miao

doi:10.1063/5.0012087

Realizing high thermoelectric performance in p-type Si_1-x-yGe_xSn_ythin films at ambient temperature by Sn modulation doping

Ying Peng, Huajun Lai, Chengyan Liu, Jie Gao, Masashi Kurosawa, Osamu Nakatsuka, Tsunehiro Takeuchi, Shigeaki Zaima, Sakae Tanemura, Lei Miao

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study, we report a power factor (PF) value as high as 1950 μW m-1 K-2 for B-ion implanted thermoelectric Si1-x-yGexSny ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si1-x-yGexSny film. It was found that using metallic Sn as nanoparticles and Si1-x-yGexSny as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si1-x-yGexSny alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature.

Original language	English
Article number	053903
Journal	Applied Physics Letters
Volume	117
Issue number	5
DOIs	https://doi.org/10.1063/5.0012087
Publication status	Published - 2020 Aug 3

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/5.0012087

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Realizing high thermoelectric performance in p-type Si_1-x-yGe_xSn_ythin films at ambient temperature by Sn modulation doping. / Peng, Ying; Lai, Huajun; Liu, Chengyan; Gao, Jie; Kurosawa, Masashi; Nakatsuka, Osamu; Takeuchi, Tsunehiro; Zaima, Shigeaki; Tanemura, Sakae; Miao, Lei.

In: Applied Physics Letters, Vol. 117, No. 5, 053903, 03.08.2020.

Research output: Contribution to journal › Article › peer-review

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title = "Realizing high thermoelectric performance in p-type Si1-x-yGexSnythin films at ambient temperature by Sn modulation doping",

abstract = "In this study, we report a power factor (PF) value as high as 1950 μW m-1 K-2 for B-ion implanted thermoelectric Si1-x-yGexSny ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si1-x-yGexSny film. It was found that using metallic Sn as nanoparticles and Si1-x-yGexSny as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si1-x-yGexSny alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature. ",

author = "Ying Peng and Huajun Lai and Chengyan Liu and Jie Gao and Masashi Kurosawa and Osamu Nakatsuka and Tsunehiro Takeuchi and Shigeaki Zaima and Sakae Tanemura and Lei Miao",

note = "Funding Information: This work was partly supported by PRESTO (Grant No. JPMJPR15R2) and CREST (Grant No. JPMJCR19Q5) from the JST in Japan, a research grant (Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development) from the MEXT in Japan, the National Natural Science Foundation of China (Grant Nos. 51772056, 51961011, and 51801040), the Guangxi Natural Science Foundation of China (Grant No. 2019GXNSFAA245039), and the Open Foundation of Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University (Grant No. 2020GXYSOF11). Publisher Copyright: {\textcopyright} 2020 Author(s). Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

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doi = "10.1063/5.0012087",

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AU - Peng, Ying

AU - Lai, Huajun

AU - Liu, Chengyan

AU - Gao, Jie

AU - Kurosawa, Masashi

AU - Nakatsuka, Osamu

AU - Takeuchi, Tsunehiro

AU - Zaima, Shigeaki

AU - Tanemura, Sakae

AU - Miao, Lei

N1 - Funding Information: This work was partly supported by PRESTO (Grant No. JPMJPR15R2) and CREST (Grant No. JPMJCR19Q5) from the JST in Japan, a research grant (Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development) from the MEXT in Japan, the National Natural Science Foundation of China (Grant Nos. 51772056, 51961011, and 51801040), the Guangxi Natural Science Foundation of China (Grant No. 2019GXNSFAA245039), and the Open Foundation of Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University (Grant No. 2020GXYSOF11). Publisher Copyright: © 2020 Author(s). Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/8/3

Y1 - 2020/8/3

N2 - In this study, we report a power factor (PF) value as high as 1950 μW m-1 K-2 for B-ion implanted thermoelectric Si1-x-yGexSny ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si1-x-yGexSny film. It was found that using metallic Sn as nanoparticles and Si1-x-yGexSny as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si1-x-yGexSny alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature.

AB - In this study, we report a power factor (PF) value as high as 1950 μW m-1 K-2 for B-ion implanted thermoelectric Si1-x-yGexSny ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si1-x-yGexSny film. It was found that using metallic Sn as nanoparticles and Si1-x-yGexSny as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si1-x-yGexSny alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature.

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Realizing high thermoelectric performance in p-type Si_1-x-yGe_xSn_ythin films at ambient temperature by Sn modulation doping

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