Abstract
In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In0.09Al0.32Ga 0.59N capping layer has close total polarization and bandgap to those of the underlying Al0.26Ga0.74N layer. The balanced polarization eliminates the depletion of electrons at the In 0.09Al0.32Ga0.59N/Al0.26Ga 0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10-6 Ω ·cm2 or less. Detailed analysis of the source resistance reveals that the series resistance at the In0.09Al0.32Ga0.59N/Al 0.26Ga0.74N interface is one fifth as low as the resistance at the conventional GaN/Al0.26 Ga0.74N interface.
| Original language | English |
|---|---|
| Pages (from-to) | 2124-2128 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 52 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2005 Oct |
| Externally published | Yes |
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Keywords
- AlGaN/GaN heterojunction field-effect transistor (HFET)
- Polarization
- Quaternary alloy
- Recessed-gate structure
- Source resistance
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers. / Nakazawa, Satoshi; Ueda, Tetsuzo; Inoue, Kaoru; Tanaka, Tsuyoshi; Ishikawa, Hiroyasu; Egawa, Takashi.
In: IEEE Transactions on Electron Devices, Vol. 52, No. 10, 10.2005, p. 2124-2128.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers
AU - Nakazawa, Satoshi
AU - Ueda, Tetsuzo
AU - Inoue, Kaoru
AU - Tanaka, Tsuyoshi
AU - Ishikawa, Hiroyasu
AU - Egawa, Takashi
PY - 2005/10
Y1 - 2005/10
N2 - In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In0.09Al0.32Ga 0.59N capping layer has close total polarization and bandgap to those of the underlying Al0.26Ga0.74N layer. The balanced polarization eliminates the depletion of electrons at the In 0.09Al0.32Ga0.59N/Al0.26Ga 0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10-6 Ω ·cm2 or less. Detailed analysis of the source resistance reveals that the series resistance at the In0.09Al0.32Ga0.59N/Al 0.26Ga0.74N interface is one fifth as low as the resistance at the conventional GaN/Al0.26 Ga0.74N interface.
AB - In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In0.09Al0.32Ga 0.59N capping layer has close total polarization and bandgap to those of the underlying Al0.26Ga0.74N layer. The balanced polarization eliminates the depletion of electrons at the In 0.09Al0.32Ga0.59N/Al0.26Ga 0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10-6 Ω ·cm2 or less. Detailed analysis of the source resistance reveals that the series resistance at the In0.09Al0.32Ga0.59N/Al 0.26Ga0.74N interface is one fifth as low as the resistance at the conventional GaN/Al0.26 Ga0.74N interface.
KW - AlGaN/GaN heterojunction field-effect transistor (HFET)
KW - Polarization
KW - Quaternary alloy
KW - Recessed-gate structure
KW - Source resistance
UR - http://www.scopus.com/inward/record.url?scp=33645510125&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33645510125&partnerID=8YFLogxK
U2 - 10.1109/TED.2005.856175
DO - 10.1109/TED.2005.856175
M3 - Article
AN - SCOPUS:33645510125
VL - 52
SP - 2124
EP - 2128
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 10
ER -