Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

Satoshi Nakazawa; Tetsuzo Ueda; Kaoru Inoue; Tsuyoshi Tanaka; Hiroyasu Ishikawa; Takashi Egawa

doi:10.1109/TED.2005.856175

Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

Satoshi Nakazawa, Tetsuzo Ueda, Kaoru Inoue, Tsuyoshi Tanaka, Hiroyasu Ishikawa, Takashi Egawa

Research output: Contribution to journal › Article

14 Citations (Scopus)

Abstract

In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In_0.09Al_0.32Ga _0.59N capping layer has close total polarization and bandgap to those of the underlying Al_0.26Ga_0.74N layer. The balanced polarization eliminates the depletion of electrons at the In _0.09Al_0.32Ga_0.59N/Al_0.26Ga _0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10^-6 Ω ·cm² or less. Detailed analysis of the source resistance reveals that the series resistance at the In_0.09Al_0.32Ga_0.59N/Al _0.26Ga_0.74N interface is one fifth as low as the resistance at the conventional GaN/Al_0.26 Ga_0.74N interface.

Original language	English
Pages (from-to)	2124-2128
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	10
DOIs	https://doi.org/10.1109/TED.2005.856175
Publication status	Published - 2005 Oct 1

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Keywords

AlGaN/GaN heterojunction field-effect transistor (HFET)
Polarization
Quaternary alloy
Recessed-gate structure
Source resistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Nakazawa, S., Ueda, T., Inoue, K., Tanaka, T., Ishikawa, H., & Egawa, T. (2005). Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers. IEEE Transactions on Electron Devices, 52(10), 2124-2128. https://doi.org/10.1109/TED.2005.856175

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title = "Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers",

abstract = "In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In0.09Al0.32Ga 0.59N capping layer has close total polarization and bandgap to those of the underlying Al0.26Ga0.74N layer. The balanced polarization eliminates the depletion of electrons at the In 0.09Al0.32Ga0.59N/Al0.26Ga 0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10-6 Ω ·cm2 or less. Detailed analysis of the source resistance reveals that the series resistance at the In0.09Al0.32Ga0.59N/Al 0.26Ga0.74N interface is one fifth as low as the resistance at the conventional GaN/Al0.26 Ga0.74N interface.",

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author = "Satoshi Nakazawa and Tetsuzo Ueda and Kaoru Inoue and Tsuyoshi Tanaka and Hiroyasu Ishikawa and Takashi Egawa",

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AU - Tanaka, Tsuyoshi

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

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AB - In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In0.09Al0.32Ga 0.59N capping layer has close total polarization and bandgap to those of the underlying Al0.26Ga0.74N layer. The balanced polarization eliminates the depletion of electrons at the In 0.09Al0.32Ga0.59N/Al0.26Ga 0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10-6 Ω ·cm2 or less. Detailed analysis of the source resistance reveals that the series resistance at the In0.09Al0.32Ga0.59N/Al 0.26Ga0.74N interface is one fifth as low as the resistance at the conventional GaN/Al0.26 Ga0.74N interface.

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Access to Document

10.1109/TED.2005.856175