Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

Satoshi Nakazawa, Tetsuzo Ueda, Kaoru Inoue, Tsuyoshi Tanaka, Hiroyasu Ishikawa, Takashi Egawa

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

In this paper, we present recessed AIGaN/GaN heterojunction field-effect transistors (HFETs) with lattice-matched InAlGaN capping layers, which reduce both ohmic contact resistance and series resistance between the AlGaN and the capping layer. The lattice-matched alloy epitaxial layer with both In and Al high compositions are successfully grown by metal-organic chemical vapor deposition. The grown lattice-matched In0.09Al0.32Ga 0.59N capping layer has close total polarization and bandgap to those of the underlying Al0.26Ga0.74N layer. The balanced polarization eliminates the depletion of electrons at the In 0.09Al0.32Ga0.59N/Al0.26Ga 0.74N interface, which can reduce the series resistance across it. It is also noted that the fabricated HFET exhibits very low ohmic contact re: sistance of 1.0 × 10-6 Ω ·cm2 or less. Detailed analysis of the source resistance reveals that the series resistance at the In0.09Al0.32Ga0.59N/Al 0.26Ga0.74N interface is one fifth as low as the resistance at the conventional GaN/Al0.26 Ga0.74N interface.

Original languageEnglish
Pages (from-to)2124-2128
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume52
Issue number10
DOIs
Publication statusPublished - 2005 Oct
Externally publishedYes

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quaternary alloys
Ohmic contacts
Field effect transistors
Heterojunctions
heterojunctions
field effect transistors
Polarization
Organic Chemicals
Organic chemicals
Epitaxial layers
Contact resistance
Crystal lattices
Chemical vapor deposition
Energy gap
Metals
Electrons
Chemical analysis
polarization
contact resistance
metalorganic chemical vapor deposition

Keywords

  • AlGaN/GaN heterojunction field-effect transistor (HFET)
  • Polarization
  • Quaternary alloy
  • Recessed-gate structure
  • Source resistance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers. / Nakazawa, Satoshi; Ueda, Tetsuzo; Inoue, Kaoru; Tanaka, Tsuyoshi; Ishikawa, Hiroyasu; Egawa, Takashi.

In: IEEE Transactions on Electron Devices, Vol. 52, No. 10, 10.2005, p. 2124-2128.

Research output: Contribution to journalArticle

Nakazawa, Satoshi ; Ueda, Tetsuzo ; Inoue, Kaoru ; Tanaka, Tsuyoshi ; Ishikawa, Hiroyasu ; Egawa, Takashi. / Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers. In: IEEE Transactions on Electron Devices. 2005 ; Vol. 52, No. 10. pp. 2124-2128.
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