Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD

Takashi Egawa, Hiroyasu Ishikawa, Takashi Jimbo, Masayoshi Umeno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metallorganic chemical vapor deposition (MOCVD). Two-dimensional electron gas (2DEG) mobility and sheet carrier density of AlGaN/GaN heterostructure on the sapphire substrate were 740 cm 2/V·s and 5.1 × 10 12 cm -2 at 300 K, and 12000 cm 2/V·s and 2.8 × 10 12 cm -2 at 8.9 K, respectively. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length Lg of 2.1 μm at 25°C. At an elevated temperature of 350°C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively. The AlGaN/GaN MODFET exhibited the stable operation with good pinch-off characteristics at high temperatures, and the very weak temperature dependence of the threshold voltage. The drain current collapse was not observed in the dark and AC measurement.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages401-404
Number of pages4
Publication statusPublished - 1999
Externally publishedYes
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 1999 Dec 51999 Dec 8

Other

Other1999 IEEE International Devices Meeting (IEDM)
CityWashington, DC, USA
Period99/12/599/12/8

Fingerprint

Metallorganic chemical vapor deposition
High electron mobility transistors
Sapphire
Two dimensional electron gas
Transconductance
Gates (transistor)
Drain current
Substrates
Threshold voltage
Temperature
Carrier concentration
Heterojunctions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Egawa, T., Ishikawa, H., Jimbo, T., & Umeno, M. (1999). Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD. In Technical Digest - International Electron Devices Meeting (pp. 401-404). IEEE.

Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD. / Egawa, Takashi; Ishikawa, Hiroyasu; Jimbo, Takashi; Umeno, Masayoshi.

Technical Digest - International Electron Devices Meeting. IEEE, 1999. p. 401-404.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Egawa, T, Ishikawa, H, Jimbo, T & Umeno, M 1999, Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD. in Technical Digest - International Electron Devices Meeting. IEEE, pp. 401-404, 1999 IEEE International Devices Meeting (IEDM), Washington, DC, USA, 99/12/5.
Egawa T, Ishikawa H, Jimbo T, Umeno M. Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD. In Technical Digest - International Electron Devices Meeting. IEEE. 1999. p. 401-404
Egawa, Takashi ; Ishikawa, Hiroyasu ; Jimbo, Takashi ; Umeno, Masayoshi. / Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD. Technical Digest - International Electron Devices Meeting. IEEE, 1999. pp. 401-404
@inproceedings{a0e83650fb3d4a99ae103d6c892ee98d,
title = "Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD",
abstract = "A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metallorganic chemical vapor deposition (MOCVD). Two-dimensional electron gas (2DEG) mobility and sheet carrier density of AlGaN/GaN heterostructure on the sapphire substrate were 740 cm 2/V·s and 5.1 × 10 12 cm -2 at 300 K, and 12000 cm 2/V·s and 2.8 × 10 12 cm -2 at 8.9 K, respectively. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length Lg of 2.1 μm at 25°C. At an elevated temperature of 350°C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively. The AlGaN/GaN MODFET exhibited the stable operation with good pinch-off characteristics at high temperatures, and the very weak temperature dependence of the threshold voltage. The drain current collapse was not observed in the dark and AC measurement.",
author = "Takashi Egawa and Hiroyasu Ishikawa and Takashi Jimbo and Masayoshi Umeno",
year = "1999",
language = "English",
pages = "401--404",
booktitle = "Technical Digest - International Electron Devices Meeting",
publisher = "IEEE",

}

TY - GEN

T1 - Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD

AU - Egawa, Takashi

AU - Ishikawa, Hiroyasu

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

PY - 1999

Y1 - 1999

N2 - A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metallorganic chemical vapor deposition (MOCVD). Two-dimensional electron gas (2DEG) mobility and sheet carrier density of AlGaN/GaN heterostructure on the sapphire substrate were 740 cm 2/V·s and 5.1 × 10 12 cm -2 at 300 K, and 12000 cm 2/V·s and 2.8 × 10 12 cm -2 at 8.9 K, respectively. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length Lg of 2.1 μm at 25°C. At an elevated temperature of 350°C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively. The AlGaN/GaN MODFET exhibited the stable operation with good pinch-off characteristics at high temperatures, and the very weak temperature dependence of the threshold voltage. The drain current collapse was not observed in the dark and AC measurement.

AB - A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metallorganic chemical vapor deposition (MOCVD). Two-dimensional electron gas (2DEG) mobility and sheet carrier density of AlGaN/GaN heterostructure on the sapphire substrate were 740 cm 2/V·s and 5.1 × 10 12 cm -2 at 300 K, and 12000 cm 2/V·s and 2.8 × 10 12 cm -2 at 8.9 K, respectively. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length Lg of 2.1 μm at 25°C. At an elevated temperature of 350°C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively. The AlGaN/GaN MODFET exhibited the stable operation with good pinch-off characteristics at high temperatures, and the very weak temperature dependence of the threshold voltage. The drain current collapse was not observed in the dark and AC measurement.

UR - http://www.scopus.com/inward/record.url?scp=0033332827&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033332827&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0033332827

SP - 401

EP - 404

BT - Technical Digest - International Electron Devices Meeting

PB - IEEE

ER -