Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

T. Egawa, Hiroyasu Ishikawa, M. Umeno, T. Jimbo

Research output: Contribution to journalArticle

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Abstract

A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metalorganic chemical vapor deposition. The two-dimensional electron gas mobility as high as 9260 cm2/Vs with the sheet carrier density 4.8× 1012cm-2 was measured at 4.6 K for the AlGaN/GaN heterostructure on the sapphire substrate. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length 2.1 μm at 25 °C. At an elevated temperature of 350 °C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively.

Original languageEnglish
Pages (from-to)121-123
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number1
Publication statusPublished - 2000 Jan 3
Externally publishedYes

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sapphire
field effect transistors
transconductance
modulation
metalorganic chemical vapor deposition
electron gas
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire. / Egawa, T.; Ishikawa, Hiroyasu; Umeno, M.; Jimbo, T.

In: Applied Physics Letters, Vol. 76, No. 1, 03.01.2000, p. 121-123.

Research output: Contribution to journalArticle

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