Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

T. Egawa, H. Ishikawa, M. Umeno, T. Jimbo

Research output: Contribution to journalArticle

80 Citations (Scopus)

Abstract

A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metalorganic chemical vapor deposition. The two-dimensional electron gas mobility as high as 9260 cm2/Vs with the sheet carrier density 4.8× 1012cm-2 was measured at 4.6 K for the AlGaN/GaN heterostructure on the sapphire substrate. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length 2.1 μm at 25 °C. At an elevated temperature of 350 °C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively.

Original languageEnglish
Pages (from-to)121-123
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number1
DOIs
Publication statusPublished - 2000 Jan 3
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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