Reduction in lags and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer

Y. Saito, R. Tsurumaki, N. Noda, K. Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We make a two-dimensional transient analysis of fieldplate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep-acceptor density NDA and the field plate affect buffer-related lag phenomena and current collapse. NDA is varied between 1017 cm-3 and 8×1017 cm-3. It is shown that without a field plate the drain lag and current collapse increase with increasing NDA as expected, although the gate lag decreases when NDA becomes higher than 2×1017 cm-3. But with a field plate, surprisingly, the lags and current collapse decrease when NDA becomes high. This is attributed to the fact that the reduction in drain lag and current collapse by introducing a field plate becomes more significant when NDA becomes higher.

LanguageEnglish
Title of host publicationInformatics, Electronics and Microsystems - TechConnect Briefs 2017
PublisherTechConnect
Pages27-30
Number of pages4
Volume4
ISBN (Electronic)9780998878218
StatePublished - 2017
Event11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States
Duration: 2017 May 142017 May 17

Other

Other11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference
CountryUnited States
CityWashington
Period17/5/1417/5/17

Fingerprint

High electron mobility transistors
Buffer layers
Transient analysis
Buffers
aluminum gallium nitride

Keywords

  • Current collapse
  • Deep acceptor
  • Field plate
  • GaN
  • HEMT

ASJC Scopus subject areas

  • Fuel Technology
  • Surfaces, Coatings and Films
  • Biotechnology
  • Fluid Flow and Transfer Processes

Cite this

Saito, Y., Tsurumaki, R., Noda, N., & Horio, K. (2017). Reduction in lags and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer. In Informatics, Electronics and Microsystems - TechConnect Briefs 2017 (Vol. 4, pp. 27-30). TechConnect.

Reduction in lags and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer. / Saito, Y.; Tsurumaki, R.; Noda, N.; Horio, K.

Informatics, Electronics and Microsystems - TechConnect Briefs 2017. Vol. 4 TechConnect, 2017. p. 27-30.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Saito, Y, Tsurumaki, R, Noda, N & Horio, K 2017, Reduction in lags and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer. in Informatics, Electronics and Microsystems - TechConnect Briefs 2017. vol. 4, TechConnect, pp. 27-30, 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference, Washington, United States, 17/5/14.
Saito Y, Tsurumaki R, Noda N, Horio K. Reduction in lags and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer. In Informatics, Electronics and Microsystems - TechConnect Briefs 2017. Vol. 4. TechConnect. 2017. p. 27-30.
Saito, Y. ; Tsurumaki, R. ; Noda, N. ; Horio, K./ Reduction in lags and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer. Informatics, Electronics and Microsystems - TechConnect Briefs 2017. Vol. 4 TechConnect, 2017. pp. 27-30
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