Reduction in lags and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer

Y. Saito, R. Tsurumaki, N. Noda, K. Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We make a two-dimensional transient analysis of fieldplate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep-acceptor density NDA and the field plate affect buffer-related lag phenomena and current collapse. NDA is varied between 1017 cm-3 and 8×1017 cm-3. It is shown that without a field plate the drain lag and current collapse increase with increasing NDA as expected, although the gate lag decreases when NDA becomes higher than 2×1017 cm-3. But with a field plate, surprisingly, the lags and current collapse decrease when NDA becomes high. This is attributed to the fact that the reduction in drain lag and current collapse by introducing a field plate becomes more significant when NDA becomes higher.

Original languageEnglish
Title of host publicationInformatics, Electronics and Microsystems - TechConnect Briefs 2017
EditorsFiona Case, Matthew Laudon, Bart Romanowicz, Fiona Case
PublisherTechConnect
Pages27-30
Number of pages4
ISBN (Electronic)9780998878218
Publication statusPublished - 2017 Jan 1
Event11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States
Duration: 2017 May 142017 May 17

Publication series

NameAdvanced Materials - TechConnect Briefs 2017
Volume4

Other

Other11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference
CountryUnited States
CityWashington
Period17/5/1417/5/17

Keywords

  • Current collapse
  • Deep acceptor
  • Field plate
  • GaN
  • HEMT

ASJC Scopus subject areas

  • Fuel Technology
  • Surfaces, Coatings and Films
  • Biotechnology
  • Fluid Flow and Transfer Processes

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  • Cite this

    Saito, Y., Tsurumaki, R., Noda, N., & Horio, K. (2017). Reduction in lags and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer. In F. Case, M. Laudon, B. Romanowicz, & F. Case (Eds.), Informatics, Electronics and Microsystems - TechConnect Briefs 2017 (pp. 27-30). (Advanced Materials - TechConnect Briefs 2017; Vol. 4). TechConnect.