Reduction of buffer-related current collapse in field-plate AlGaN/GaN HEMTs

Atsushi Nakajima, Keiichi Itagaki, Kazushige Horio

Research output: Contribution to journalArticle

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Abstract

Two-dimensional transient analyses of field-plate AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer, and quasi-pulsed current-voltage curves are derived from them. It is studied how the existence of field plate affects buffer-related drain lag, gate lag and current collapse. It is shown that the drain lag is reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it, and the trapping effects are reduced. It is also shown that the current collapse and gate lag are reduced in the field-plate structure. The dependence on SiN passivation layer thickness is also studied, suggesting that there is an optimum thickness of SiN layer to minimize the buffer-related current collapse and drain lag in AlGaN/GaN HEMTs.

Original languageEnglish
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue numberSUPPL. 2
DOIs
Publication statusPublished - 2009 Jul

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high electron mobility transistors
time lag
buffers
passivity
trapping
injection
electric potential
curves
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics

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Reduction of buffer-related current collapse in field-plate AlGaN/GaN HEMTs. / Nakajima, Atsushi; Itagaki, Keiichi; Horio, Kazushige.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 6, No. SUPPL. 2, 07.2009.

Research output: Contribution to journalArticle

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