Abstract
Two-dimensional transient analyses of field-plate AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer, and quasi-pulsed current-voltage curves are derived from them. It is studied how the existence of field plate affects buffer-related drain lag, gate lag and current collapse. It is shown that the drain lag is reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it, and the trapping effects are reduced. It is also shown that the current collapse and gate lag are reduced in the field-plate structure. The dependence on SiN passivation layer thickness is also studied, suggesting that there is an optimum thickness of SiN layer to minimize the buffer-related current collapse and drain lag in AlGaN/GaN HEMTs.
| Original language | English |
|---|---|
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 6 |
| Issue number | SUPPL. 2 |
| DOIs | |
| Publication status | Published - 2009 Jul |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Reduction of buffer-related current collapse in field-plate AlGaN/GaN HEMTs. / Nakajima, Atsushi; Itagaki, Keiichi; Horio, Kazushige.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 6, No. SUPPL. 2, 07.2009.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Reduction of buffer-related current collapse in field-plate AlGaN/GaN HEMTs
AU - Nakajima, Atsushi
AU - Itagaki, Keiichi
AU - Horio, Kazushige
PY - 2009/7
Y1 - 2009/7
N2 - Two-dimensional transient analyses of field-plate AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer, and quasi-pulsed current-voltage curves are derived from them. It is studied how the existence of field plate affects buffer-related drain lag, gate lag and current collapse. It is shown that the drain lag is reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it, and the trapping effects are reduced. It is also shown that the current collapse and gate lag are reduced in the field-plate structure. The dependence on SiN passivation layer thickness is also studied, suggesting that there is an optimum thickness of SiN layer to minimize the buffer-related current collapse and drain lag in AlGaN/GaN HEMTs.
AB - Two-dimensional transient analyses of field-plate AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer, and quasi-pulsed current-voltage curves are derived from them. It is studied how the existence of field plate affects buffer-related drain lag, gate lag and current collapse. It is shown that the drain lag is reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it, and the trapping effects are reduced. It is also shown that the current collapse and gate lag are reduced in the field-plate structure. The dependence on SiN passivation layer thickness is also studied, suggesting that there is an optimum thickness of SiN layer to minimize the buffer-related current collapse and drain lag in AlGaN/GaN HEMTs.
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U2 - 10.1002/pssc.200880756
DO - 10.1002/pssc.200880756
M3 - Article
VL - 6
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - SUPPL. 2
ER -