Abstract
Two-dimensional transient analysis of GaN MESFETs with a semi-insulating buffer layer is performed in which a deep donor and a deep acceptor are considered in the buffer layer, and the results are compared between the two cases with and without a field plate. It is shown that buffer-related drain lag is reduced by introducing a field plate because trapping effects become smaller. It is also shown that current collapse and gate lag are also reduced in the field-plate structure. The dependence on SiN passivation layer thickness is also studied, indicating that there is an optimum SiN thickness to minimize the buffer-related current collapse and drain lag in GaN-based FETs.
| Original language | English |
|---|---|
| Pages (from-to) | 2976-2978 |
| Number of pages | 3 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 5 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2008 |
Fingerprint
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Reduction of buffer-related current collapse in GaN FETs under favour of a field plate. / Itagaki, K.; Nakajima, A.; Horio, Kazushige.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 9, 2008, p. 2976-2978.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Reduction of buffer-related current collapse in GaN FETs under favour of a field plate
AU - Itagaki, K.
AU - Nakajima, A.
AU - Horio, Kazushige
PY - 2008
Y1 - 2008
N2 - Two-dimensional transient analysis of GaN MESFETs with a semi-insulating buffer layer is performed in which a deep donor and a deep acceptor are considered in the buffer layer, and the results are compared between the two cases with and without a field plate. It is shown that buffer-related drain lag is reduced by introducing a field plate because trapping effects become smaller. It is also shown that current collapse and gate lag are also reduced in the field-plate structure. The dependence on SiN passivation layer thickness is also studied, indicating that there is an optimum SiN thickness to minimize the buffer-related current collapse and drain lag in GaN-based FETs.
AB - Two-dimensional transient analysis of GaN MESFETs with a semi-insulating buffer layer is performed in which a deep donor and a deep acceptor are considered in the buffer layer, and the results are compared between the two cases with and without a field plate. It is shown that buffer-related drain lag is reduced by introducing a field plate because trapping effects become smaller. It is also shown that current collapse and gate lag are also reduced in the field-plate structure. The dependence on SiN passivation layer thickness is also studied, indicating that there is an optimum SiN thickness to minimize the buffer-related current collapse and drain lag in GaN-based FETs.
UR - http://www.scopus.com/inward/record.url?scp=77951270551&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951270551&partnerID=8YFLogxK
U2 - 10.1002/pssc.200779155
DO - 10.1002/pssc.200779155
M3 - Article
AN - SCOPUS:77951270551
VL - 5
SP - 2976
EP - 2978
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 9
ER -