Reduction of buffer-related current collapse in GaN FETs under favour of a field plate

K. Itagaki, A. Nakajima, K. Horio

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Two-dimensional transient analysis of GaN MESFETs with a semi-insulating buffer layer is performed in which a deep donor and a deep acceptor are considered in the buffer layer, and the results are compared between the two cases with and without a field plate. It is shown that buffer-related drain lag is reduced by introducing a field plate because trapping effects become smaller. It is also shown that current collapse and gate lag are also reduced in the field-plate structure. The dependence on SiN passivation layer thickness is also studied, indicating that there is an optimum SiN thickness to minimize the buffer-related current collapse and drain lag in GaN-based FETs.

Original languageEnglish
Pages (from-to)2976-2978
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number9
DOIs
Publication statusPublished - 2008 Dec 1
Event34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
Duration: 2007 Oct 152007 Oct 18

ASJC Scopus subject areas

  • Condensed Matter Physics

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