Reduction of the bowing in MOVPE AlGaN/GaN HEMT structures by using an interlayer insertion method

M. Sakai, T. Egawa, Hiroyasu Ishikawa, T. Jimbo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

AlGaN/GaN high electron mobility transistor (HEMT) structures with reduced bowing were demonstrated using an interlayer insertion method. The InGaN interlayers had an effect of suppressing the epiwafer bowing up to 20 μm. By using InGaN/GaN multilayers as an interlayer, the epiwafer bowing was drastically decreased by up to 9.4 μm. The mobility of AlGaN/GaN HEMT structures with 10-period InGaN/GaN interlayers was 1083 cm 2/Vs with the sheet carrier concentration, N s, of 1.1 × 10 13 at room temperature and 4997 cm 2/Vs with N s of 1.1 × 10 13 cm 2/Vs at 77 K. The FWHM of the X-ray rocking curve for (0004) reflection was 259 arcsec. The fabricated 2-μm-length and 15-μm-width high electron mobility transistor showed a high drain current (I DSmax = 617 mA/mm) and a high transconductance (g mmax = 174 mS/mm). The interlayer insertion method is effective for suppressing the epiwafer bowing. It may be a good solution for reducing the bowing of large-diameter epiwafers.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages2412-2415
Number of pages4
Edition7
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

Other

Other5th International Conference on Nitride Semiconductors, ICNS 2003
CountryJapan
CityNara
Period03/5/2503/5/30

Fingerprint

Bending (forming)
Metallorganic vapor phase epitaxy
High electron mobility transistors
high electron mobility transistors
insertion
interlayers
Drain current
Transconductance
transconductance
Full width at half maximum
Carrier concentration
high current
Multilayers
aluminum gallium nitride
X rays
room temperature
curves
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Sakai, M., Egawa, T., Ishikawa, H., & Jimbo, T. (2003). Reduction of the bowing in MOVPE AlGaN/GaN HEMT structures by using an interlayer insertion method. In Physica Status Solidi C: Conferences (7 ed., pp. 2412-2415) https://doi.org/10.1002/pssc.200303362

Reduction of the bowing in MOVPE AlGaN/GaN HEMT structures by using an interlayer insertion method. / Sakai, M.; Egawa, T.; Ishikawa, Hiroyasu; Jimbo, T.

Physica Status Solidi C: Conferences. 7. ed. 2003. p. 2412-2415.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sakai, M, Egawa, T, Ishikawa, H & Jimbo, T 2003, Reduction of the bowing in MOVPE AlGaN/GaN HEMT structures by using an interlayer insertion method. in Physica Status Solidi C: Conferences. 7 edn, pp. 2412-2415, 5th International Conference on Nitride Semiconductors, ICNS 2003, Nara, Japan, 03/5/25. https://doi.org/10.1002/pssc.200303362
Sakai, M. ; Egawa, T. ; Ishikawa, Hiroyasu ; Jimbo, T. / Reduction of the bowing in MOVPE AlGaN/GaN HEMT structures by using an interlayer insertion method. Physica Status Solidi C: Conferences. 7. ed. 2003. pp. 2412-2415
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