Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates

Hiroyasu Ishikawa, Keita Shimanaka

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We report a novel growth technique of GaN films on Si substrates using a metalorganic chemical vapor deposition. First, Ga droplets are deposited on a Si substrate by feeding trimethylgallium. And then the substrate is heated at 1080 °C, resulting in the formation of recesses on its surface by meltback etching. Finally, a GaN film is grown on the Ga-induced meltback-etched surface using a high-temperature-grown AlN intermediate layer. After the growth of the GaN film, 0.51-μm-diameter pits were observed on the GaN surface. A cathodoluminescence image reveals that low-threading-dislocation-density regions were successfully grown around the pits.

Original languageEnglish
Pages (from-to)196-199
Number of pages4
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2011 Jan 15


  • A1. Defects
  • A1. Etching
  • A1. Surfaces
  • A3. Metalorganic chemical vapor deposition
  • B1. Nitrides
  • B2. Semiconducting IIIV materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


Dive into the research topics of 'Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates'. Together they form a unique fingerprint.

Cite this