Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates

Hiroyasu Ishikawa, Keita Shimanaka

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report a novel growth technique of GaN films on Si substrates using a metalorganic chemical vapor deposition. First, Ga droplets are deposited on a Si substrate by feeding trimethylgallium. And then the substrate is heated at 1080 °C, resulting in the formation of recesses on its surface by meltback etching. Finally, a GaN film is grown on the Ga-induced meltback-etched surface using a high-temperature-grown AlN intermediate layer. After the growth of the GaN film, 0.51-μm-diameter pits were observed on the GaN surface. A cathodoluminescence image reveals that low-threading-dislocation-density regions were successfully grown around the pits.

Original languageEnglish
Pages (from-to)196-199
Number of pages4
JournalJournal of Crystal Growth
Volume315
Issue number1
DOIs
Publication statusPublished - 2011 Jan 15

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Substrates
recesses
Cathodoluminescence
Metallorganic chemical vapor deposition
cathodoluminescence
metalorganic chemical vapor deposition
Etching
etching
Temperature

Keywords

  • A1. Defects
  • A1. Etching
  • A1. Surfaces
  • A3. Metalorganic chemical vapor deposition
  • B1. Nitrides
  • B2. Semiconducting IIIV materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates. / Ishikawa, Hiroyasu; Shimanaka, Keita.

In: Journal of Crystal Growth, Vol. 315, No. 1, 15.01.2011, p. 196-199.

Research output: Contribution to journalArticle

@article{008812666957444b8f7c4ce3d7034bf1,
title = "Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates",
abstract = "We report a novel growth technique of GaN films on Si substrates using a metalorganic chemical vapor deposition. First, Ga droplets are deposited on a Si substrate by feeding trimethylgallium. And then the substrate is heated at 1080 °C, resulting in the formation of recesses on its surface by meltback etching. Finally, a GaN film is grown on the Ga-induced meltback-etched surface using a high-temperature-grown AlN intermediate layer. After the growth of the GaN film, 0.51-μm-diameter pits were observed on the GaN surface. A cathodoluminescence image reveals that low-threading-dislocation-density regions were successfully grown around the pits.",
keywords = "A1. Defects, A1. Etching, A1. Surfaces, A3. Metalorganic chemical vapor deposition, B1. Nitrides, B2. Semiconducting IIIV materials",
author = "Hiroyasu Ishikawa and Keita Shimanaka",
year = "2011",
month = "1",
day = "15",
doi = "10.1016/j.jcrysgro.2010.09.062",
language = "English",
volume = "315",
pages = "196--199",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates

AU - Ishikawa, Hiroyasu

AU - Shimanaka, Keita

PY - 2011/1/15

Y1 - 2011/1/15

N2 - We report a novel growth technique of GaN films on Si substrates using a metalorganic chemical vapor deposition. First, Ga droplets are deposited on a Si substrate by feeding trimethylgallium. And then the substrate is heated at 1080 °C, resulting in the formation of recesses on its surface by meltback etching. Finally, a GaN film is grown on the Ga-induced meltback-etched surface using a high-temperature-grown AlN intermediate layer. After the growth of the GaN film, 0.51-μm-diameter pits were observed on the GaN surface. A cathodoluminescence image reveals that low-threading-dislocation-density regions were successfully grown around the pits.

AB - We report a novel growth technique of GaN films on Si substrates using a metalorganic chemical vapor deposition. First, Ga droplets are deposited on a Si substrate by feeding trimethylgallium. And then the substrate is heated at 1080 °C, resulting in the formation of recesses on its surface by meltback etching. Finally, a GaN film is grown on the Ga-induced meltback-etched surface using a high-temperature-grown AlN intermediate layer. After the growth of the GaN film, 0.51-μm-diameter pits were observed on the GaN surface. A cathodoluminescence image reveals that low-threading-dislocation-density regions were successfully grown around the pits.

KW - A1. Defects

KW - A1. Etching

KW - A1. Surfaces

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Nitrides

KW - B2. Semiconducting IIIV materials

UR - http://www.scopus.com/inward/record.url?scp=79551688495&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79551688495&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2010.09.062

DO - 10.1016/j.jcrysgro.2010.09.062

M3 - Article

VL - 315

SP - 196

EP - 199

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -