Reflective properties of Mo/Si multilayer for EUV lithography deposited by the magnetron sputtering device with superconducting bulk magnets

T. Yamaguchi, H. Ikuta, T. Tomofuji, Y. Yanagi, Y. Itoh, Tetsuo Oka, U. Mizutani

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have fabricated Mo/Si bi-layer and multilayer films under the Xe gas pressures in the range of 0.005-0.1 Pa and the throw distance between the substrate and target longer than 200 mm by using the two-cathode superconducting magnetron sputtering apparatus and studied the effect of deposition conditions on the EUV-reflectivity of Mo/Si multilayer films. The TEM observation for the Mo/Si 50-layer film revealed that the thickness of the Mo-on-Si inter-diffusion layer formed upon depositing Mo on Si layer is 1.5 nm whereas that of the Si-on-Mo one is 0.5 nm. The root-mean square surface roughness for the same multi-layer film, as observed by the atomic force microscope, was only 0.12 nm and was increased only by 0.02 nm relative to that of the Si wafer before deposition. The EUV-reflectivity of the corresponding film turned out to be 67%, which was about 3% smaller than the value calculated from the structure data. The reduction in the reflectivity was attributed to a small amount of the Xe gas atoms captured in the multilayer film during deposition.

Original languageEnglish
Pages (from-to)2170-2173
Number of pages4
JournalPhysica C: Superconductivity and its Applications
Volume468
Issue number15-20
DOIs
Publication statusPublished - 2008 Sep 15
Externally publishedYes

Fingerprint

Extreme ultraviolet lithography
Multilayer films
Magnetron sputtering
Magnets
magnetron sputtering
Multilayers
magnets
lithography
Gases
reflectance
Microscopes
Cathodes
data structures
Surface roughness
Transmission electron microscopy
Atoms
gas pressure
surface roughness
Substrates
cathodes

Keywords

  • Magnetron sputtering
  • Mo/Si multilayer films
  • Superconducting bulk magnet

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Reflective properties of Mo/Si multilayer for EUV lithography deposited by the magnetron sputtering device with superconducting bulk magnets. / Yamaguchi, T.; Ikuta, H.; Tomofuji, T.; Yanagi, Y.; Itoh, Y.; Oka, Tetsuo; Mizutani, U.

In: Physica C: Superconductivity and its Applications, Vol. 468, No. 15-20, 15.09.2008, p. 2170-2173.

Research output: Contribution to journalArticle

@article{afaa8d7b3c164498922f40d577dabc5a,
title = "Reflective properties of Mo/Si multilayer for EUV lithography deposited by the magnetron sputtering device with superconducting bulk magnets",
abstract = "We have fabricated Mo/Si bi-layer and multilayer films under the Xe gas pressures in the range of 0.005-0.1 Pa and the throw distance between the substrate and target longer than 200 mm by using the two-cathode superconducting magnetron sputtering apparatus and studied the effect of deposition conditions on the EUV-reflectivity of Mo/Si multilayer films. The TEM observation for the Mo/Si 50-layer film revealed that the thickness of the Mo-on-Si inter-diffusion layer formed upon depositing Mo on Si layer is 1.5 nm whereas that of the Si-on-Mo one is 0.5 nm. The root-mean square surface roughness for the same multi-layer film, as observed by the atomic force microscope, was only 0.12 nm and was increased only by 0.02 nm relative to that of the Si wafer before deposition. The EUV-reflectivity of the corresponding film turned out to be 67{\%}, which was about 3{\%} smaller than the value calculated from the structure data. The reduction in the reflectivity was attributed to a small amount of the Xe gas atoms captured in the multilayer film during deposition.",
keywords = "Magnetron sputtering, Mo/Si multilayer films, Superconducting bulk magnet",
author = "T. Yamaguchi and H. Ikuta and T. Tomofuji and Y. Yanagi and Y. Itoh and Tetsuo Oka and U. Mizutani",
year = "2008",
month = "9",
day = "15",
doi = "10.1016/j.physc.2008.05.149",
language = "English",
volume = "468",
pages = "2170--2173",
journal = "Physica C: Superconductivity and its Applications",
issn = "0921-4534",
publisher = "Elsevier",
number = "15-20",

}

TY - JOUR

T1 - Reflective properties of Mo/Si multilayer for EUV lithography deposited by the magnetron sputtering device with superconducting bulk magnets

AU - Yamaguchi, T.

AU - Ikuta, H.

AU - Tomofuji, T.

AU - Yanagi, Y.

AU - Itoh, Y.

AU - Oka, Tetsuo

AU - Mizutani, U.

PY - 2008/9/15

Y1 - 2008/9/15

N2 - We have fabricated Mo/Si bi-layer and multilayer films under the Xe gas pressures in the range of 0.005-0.1 Pa and the throw distance between the substrate and target longer than 200 mm by using the two-cathode superconducting magnetron sputtering apparatus and studied the effect of deposition conditions on the EUV-reflectivity of Mo/Si multilayer films. The TEM observation for the Mo/Si 50-layer film revealed that the thickness of the Mo-on-Si inter-diffusion layer formed upon depositing Mo on Si layer is 1.5 nm whereas that of the Si-on-Mo one is 0.5 nm. The root-mean square surface roughness for the same multi-layer film, as observed by the atomic force microscope, was only 0.12 nm and was increased only by 0.02 nm relative to that of the Si wafer before deposition. The EUV-reflectivity of the corresponding film turned out to be 67%, which was about 3% smaller than the value calculated from the structure data. The reduction in the reflectivity was attributed to a small amount of the Xe gas atoms captured in the multilayer film during deposition.

AB - We have fabricated Mo/Si bi-layer and multilayer films under the Xe gas pressures in the range of 0.005-0.1 Pa and the throw distance between the substrate and target longer than 200 mm by using the two-cathode superconducting magnetron sputtering apparatus and studied the effect of deposition conditions on the EUV-reflectivity of Mo/Si multilayer films. The TEM observation for the Mo/Si 50-layer film revealed that the thickness of the Mo-on-Si inter-diffusion layer formed upon depositing Mo on Si layer is 1.5 nm whereas that of the Si-on-Mo one is 0.5 nm. The root-mean square surface roughness for the same multi-layer film, as observed by the atomic force microscope, was only 0.12 nm and was increased only by 0.02 nm relative to that of the Si wafer before deposition. The EUV-reflectivity of the corresponding film turned out to be 67%, which was about 3% smaller than the value calculated from the structure data. The reduction in the reflectivity was attributed to a small amount of the Xe gas atoms captured in the multilayer film during deposition.

KW - Magnetron sputtering

KW - Mo/Si multilayer films

KW - Superconducting bulk magnet

UR - http://www.scopus.com/inward/record.url?scp=50449089619&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50449089619&partnerID=8YFLogxK

U2 - 10.1016/j.physc.2008.05.149

DO - 10.1016/j.physc.2008.05.149

M3 - Article

VL - 468

SP - 2170

EP - 2173

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

SN - 0921-4534

IS - 15-20

ER -