Reliability study on three-dimensional Au/WSiN interconnections for ultra-compact MMICs

Hirohiko Sugahara, Masakatsu Kimizuka, Yoshino K. Fukai, Makoto Hirano, Fumiaki Hyuga

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    Abstract

    This paper discusses the reliability of three-dimensional Au/WSiN interconnections buried in a polyimide layer. Temperature cycle tests and bias stress tests reveal the high stability of this system. It is found that the enhanced degradation occurs at the Au/WSiN viahole contacts, which strongly depends on the current density. SEM analysis reveals the void formation in the Au layer near the Au-WSiN interface, which can be explained by the dam effect created by the WSiN layer.

    Original languageEnglish
    Pages (from-to)1659-1662
    Number of pages4
    JournalMicroelectronics Reliability
    Volume37
    Issue number10-11
    DOIs
    Publication statusPublished - 1997 Jan 1

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    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Safety, Risk, Reliability and Quality
    • Condensed Matter Physics
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering

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