Abstract
This paper discusses the reliability of three-dimensional Au/WSiN interconnections buried in a polyimide layer. Temperature cycle tests and bias stress tests reveal the high stability of this system. It is found that the enhanced degradation occurs at the Au/WSiN viahole contacts, which strongly depends on the current density. SEM analysis reveals the void formation in the Au layer near the Au-WSiN interface, which can be explained by the dam effect created by the WSiN layer.
Original language | English |
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Pages (from-to) | 1659-1662 |
Number of pages | 4 |
Journal | Microelectronics Reliability |
Volume | 37 |
Issue number | 10-11 |
DOIs | |
Publication status | Published - 1997 Jan 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering