Reliability tests of electroless barriers against copper diffusion under bias-temperature stress with n- and p-type substrates

Kazuyoshi Ueno, Shota Fujishima, Makoto Yamashita, Akiyoshi Mitsumori

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

To investigate the similarity and difference of substrate conduction type in the time-dependent dielectric breakdown (TDDB) tests for the barrier integrity against Cu diffusion under bias-temperature stress (BTS), the TDDB reliability of electroless NiB and CoWP/NiB was determined by metal oxide semiconductor (MOS) structures on n-type Si (n-Si) substrates, and the test results were compared with those using p-type Si (p-Si) substrates. The TDDB results and mechanism were observed to be qualitatively the same as Cu diffusion for both conduction types. However, the TDDB lifetime using p-Si was found to be potentially shorter because of the reverse bias conditions than that using n-Si under the forward bias conditions.

Original languageEnglish
Article number56501
JournalJapanese Journal of Applied Physics
Volume55
Issue number5
DOIs
Publication statusPublished - 2016 May 1

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Electric breakdown
breakdown
Copper
copper
Substrates
conduction
Temperature
temperature
metal oxide semiconductors
integrity
life (durability)
Metals

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Reliability tests of electroless barriers against copper diffusion under bias-temperature stress with n- and p-type substrates. / Ueno, Kazuyoshi; Fujishima, Shota; Yamashita, Makoto; Mitsumori, Akiyoshi.

In: Japanese Journal of Applied Physics, Vol. 55, No. 5, 56501, 01.05.2016.

Research output: Contribution to journalArticle

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