Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD

Takashi Egawa, Baijun Zhang, Naohiro Nishikawa, Hiroyasu Ishikawa, Takashi Jimbo

Research output: Contribution to journalConference articlepeer-review


We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27 and 60°C.

Original languageEnglish
Pages (from-to)205-208
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2001 Dec 1
Externally publishedYes
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2001 Dec 22001 Dec 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD'. Together they form a unique fingerprint.

Cite this