Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD

Takashi Egawa, Baijun Zhang, Naohiro Nishikawa, Hiroyasu Ishikawa, Takashi Jimbo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al 0.27Ga 0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27 and 60°C.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Pages205-208
Number of pages4
Publication statusPublished - 2001
Externally publishedYes
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2001 Dec 22001 Dec 5

Other

OtherIEEE International Electron Devices Meeting IEDM 2001
CountryUnited States
CityWashington, DC
Period01/12/201/12/5

Fingerprint

Metallorganic chemical vapor deposition
Semiconductor quantum wells
Light emitting diodes
Electric current control
Full width at half maximum
Sapphire
Wavelength
Electric potential
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Egawa, T., Zhang, B., Nishikawa, N., Ishikawa, H., & Jimbo, T. (2001). Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD. In Technical Digest - International Electron Devices Meeting (pp. 205-208)

Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD. / Egawa, Takashi; Zhang, Baijun; Nishikawa, Naohiro; Ishikawa, Hiroyasu; Jimbo, Takashi.

Technical Digest - International Electron Devices Meeting. 2001. p. 205-208.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Egawa, T, Zhang, B, Nishikawa, N, Ishikawa, H & Jimbo, T 2001, Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD. in Technical Digest - International Electron Devices Meeting. pp. 205-208, IEEE International Electron Devices Meeting IEDM 2001, Washington, DC, United States, 01/12/2.
Egawa T, Zhang B, Nishikawa N, Ishikawa H, Jimbo T. Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD. In Technical Digest - International Electron Devices Meeting. 2001. p. 205-208
Egawa, Takashi ; Zhang, Baijun ; Nishikawa, Naohiro ; Ishikawa, Hiroyasu ; Jimbo, Takashi. / Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD. Technical Digest - International Electron Devices Meeting. 2001. pp. 205-208
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