Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD

Takashi Egawa; Baijun Zhang; Naohiro Nishikawa; Hiroyasu Ishikawa; Takashi Jimbo

Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD

Takashi Egawa, Baijun Zhang, Naohiro Nishikawa, Hiroyasu Ishikawa, Takashi Jimbo

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al_0.27Ga_0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27 and 60°C.

Original language	English
Pages (from-to)	205-208
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2001 Dec 1
Externally published	Yes
Event	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: 2001 Dec 2 → 2001 Dec 5

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD",

abstract = "We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27 and 60°C.",

author = "Takashi Egawa and Baijun Zhang and Naohiro Nishikawa and Hiroyasu Ishikawa and Takashi Jimbo",

year = "2001",

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language = "English",

pages = "205--208",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

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TY - JOUR

T1 - Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD

AU - Egawa, Takashi

AU - Zhang, Baijun

AU - Nishikawa, Naohiro

AU - Ishikawa, Hiroyasu

AU - Jimbo, Takashi

PY - 2001/12/1

Y1 - 2001/12/1

N2 - We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27 and 60°C.

AB - We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27 and 60°C.

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M3 - Conference article

AN - SCOPUS:0035714323

SN - 0163-1918

SP - 205

EP - 208

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting IEDM 2001

Y2 - 2 December 2001 through 5 December 2001

ER -

Reliable InGaN multiple-quantum well green LEDs on Si grown by MOCVD

Abstract

ASJC Scopus subject areas

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