Removal of surface-related current slump in field-plate GaAs FETs

F. Hafiz, M. Kumeno, T. Tanaka, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that the drain lag and current slump due to surface states can be reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. The dependence of lag phenomena and current slump on fieldplate length and SiO2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.

Original languageEnglish
Title of host publication2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012
Publication statusPublished - 2012
Event27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 - Boston, MA
Duration: 2012 Apr 232012 Apr 26

Other

Other27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012
CityBoston, MA
Period12/4/2312/4/26

Fingerprint

Surface states
Field effect transistors
Passivation
Transient analysis
Electric potential

Keywords

  • Current slump
  • Drain lag
  • Field plate
  • GaAs FET
  • Gate lag
  • Surface state

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Hafiz, F., Kumeno, M., Tanaka, T., & Horio, K. (2012). Removal of surface-related current slump in field-plate GaAs FETs. In 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012

Removal of surface-related current slump in field-plate GaAs FETs. / Hafiz, F.; Kumeno, M.; Tanaka, T.; Horio, Kazushige.

2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012. 2012.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hafiz, F, Kumeno, M, Tanaka, T & Horio, K 2012, Removal of surface-related current slump in field-plate GaAs FETs. in 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012. 27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012, Boston, MA, 12/4/23.
Hafiz F, Kumeno M, Tanaka T, Horio K. Removal of surface-related current slump in field-plate GaAs FETs. In 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012. 2012
Hafiz, F. ; Kumeno, M. ; Tanaka, T. ; Horio, Kazushige. / Removal of surface-related current slump in field-plate GaAs FETs. 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012. 2012.
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