Removal of surface-related current slump in field-plate GaAs FETs

F. Hafiz, M. Kumeno, T. Tanaka, K. Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that the drain lag and current slump due to surface states can be reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. The dependence of lag phenomena and current slump on fieldplate length and SiO2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.

Original languageEnglish
Title of host publication2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012
Publication statusPublished - 2012 Dec 1
Event27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 - Boston, MA, United States
Duration: 2012 Apr 232012 Apr 26

Publication series

Name2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012

Conference

Conference27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012
CountryUnited States
CityBoston, MA
Period12/4/2312/4/26

Keywords

  • Current slump
  • Drain lag
  • Field plate
  • GaAs FET
  • Gate lag
  • Surface state

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Hafiz, F., Kumeno, M., Tanaka, T., & Horio, K. (2012). Removal of surface-related current slump in field-plate GaAs FETs. In 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 (2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012).