Resistance to active oxidation of Sol-Gel HfO2 coated SiC polycrystal

T. Akashi; M. Kasajima; H. Kiyono

doi:10.1149/1.3224755

Resistance to active oxidation of Sol-Gel HfO₂ coated SiC polycrystal

T. Akashi, M. Kasajima, H. Kiyono

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Sintered SiC substrate was coated with HfO₂ by a sol-gel process using Hf(OEt)₄, diethanol-amine, and ethanol. The HfO ₂-coated SiC specimen was oxidized isothermally in high purity Ar gas flow at 1873 K for 36 ks and the weight change was monitored by an electro-microbalance. The weight of the un-coated SiC specimen decreased significantly due to the active oxidation, while the weight losses of HfO ₂-coated SiC specimens after the isothermal oxidation for 36 ks were smaller than that of un-coated specimen. TEM image of HfO₂-coated SiC specimen after oxidation depicted that thick SiO₂ layer (∼800 nm) with a small amount of Hf elements formed on the surface of the specimen. XRD analysis indicated that HfC formed during the isothermal oxidation of HfO₂-coated SiC specimen.

Original language	English
Title of host publication	ECS Transactions - High Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting
Pages	185-190
Number of pages	6
Edition	44
DOIs	https://doi.org/10.1149/1.3224755
Publication status	Published - 2008 Dec 1
Event	High Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting - Honolulu, HI, United States Duration: 2008 Oct 12 → 2008 Oct 17

Publication series

Name	ECS Transactions
Number	44
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	High Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting
Country	United States
City	Honolulu, HI
Period	08/10/12 → 08/10/17

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ASJC Scopus subject areas

Engineering(all)

Cite this

Akashi, T., Kasajima, M., & Kiyono, H. (2008). Resistance to active oxidation of Sol-Gel HfO₂ coated SiC polycrystal. In ECS Transactions - High Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting (44 ed., pp. 185-190). (ECS Transactions; Vol. 16, No. 44). https://doi.org/10.1149/1.3224755

Akashi, T, Kasajima, M & Kiyono, H 2008, Resistance to active oxidation of Sol-Gel HfO₂ coated SiC polycrystal. in ECS Transactions - High Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting. 44 edn, ECS Transactions, no. 44, vol. 16, pp. 185-190, High Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting, Honolulu, HI, United States, 08/10/12. https://doi.org/10.1149/1.3224755

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title = "Resistance to active oxidation of Sol-Gel HfO2 coated SiC polycrystal",

abstract = "Sintered SiC substrate was coated with HfO2 by a sol-gel process using Hf(OEt)4, diethanol-amine, and ethanol. The HfO 2-coated SiC specimen was oxidized isothermally in high purity Ar gas flow at 1873 K for 36 ks and the weight change was monitored by an electro-microbalance. The weight of the un-coated SiC specimen decreased significantly due to the active oxidation, while the weight losses of HfO 2-coated SiC specimens after the isothermal oxidation for 36 ks were smaller than that of un-coated specimen. TEM image of HfO2-coated SiC specimen after oxidation depicted that thick SiO2 layer (∼800 nm) with a small amount of Hf elements formed on the surface of the specimen. XRD analysis indicated that HfC formed during the isothermal oxidation of HfO2-coated SiC specimen.",

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N2 - Sintered SiC substrate was coated with HfO2 by a sol-gel process using Hf(OEt)4, diethanol-amine, and ethanol. The HfO 2-coated SiC specimen was oxidized isothermally in high purity Ar gas flow at 1873 K for 36 ks and the weight change was monitored by an electro-microbalance. The weight of the un-coated SiC specimen decreased significantly due to the active oxidation, while the weight losses of HfO 2-coated SiC specimens after the isothermal oxidation for 36 ks were smaller than that of un-coated specimen. TEM image of HfO2-coated SiC specimen after oxidation depicted that thick SiO2 layer (∼800 nm) with a small amount of Hf elements formed on the surface of the specimen. XRD analysis indicated that HfC formed during the isothermal oxidation of HfO2-coated SiC specimen.

AB - Sintered SiC substrate was coated with HfO2 by a sol-gel process using Hf(OEt)4, diethanol-amine, and ethanol. The HfO 2-coated SiC specimen was oxidized isothermally in high purity Ar gas flow at 1873 K for 36 ks and the weight change was monitored by an electro-microbalance. The weight of the un-coated SiC specimen decreased significantly due to the active oxidation, while the weight losses of HfO 2-coated SiC specimens after the isothermal oxidation for 36 ks were smaller than that of un-coated specimen. TEM image of HfO2-coated SiC specimen after oxidation depicted that thick SiO2 layer (∼800 nm) with a small amount of Hf elements formed on the surface of the specimen. XRD analysis indicated that HfC formed during the isothermal oxidation of HfO2-coated SiC specimen.

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10.1149/1.3224755