TY - GEN
T1 - Resistance to active oxidation of Sol-Gel HfO2 coated SiC polycrystal
AU - Akashi, T.
AU - Kasajima, M.
AU - Kiyono, H.
PY - 2008/12/1
Y1 - 2008/12/1
N2 - Sintered SiC substrate was coated with HfO2 by a sol-gel process using Hf(OEt)4, diethanol-amine, and ethanol. The HfO 2-coated SiC specimen was oxidized isothermally in high purity Ar gas flow at 1873 K for 36 ks and the weight change was monitored by an electro-microbalance. The weight of the un-coated SiC specimen decreased significantly due to the active oxidation, while the weight losses of HfO 2-coated SiC specimens after the isothermal oxidation for 36 ks were smaller than that of un-coated specimen. TEM image of HfO2-coated SiC specimen after oxidation depicted that thick SiO2 layer (∼800 nm) with a small amount of Hf elements formed on the surface of the specimen. XRD analysis indicated that HfC formed during the isothermal oxidation of HfO2-coated SiC specimen.
AB - Sintered SiC substrate was coated with HfO2 by a sol-gel process using Hf(OEt)4, diethanol-amine, and ethanol. The HfO 2-coated SiC specimen was oxidized isothermally in high purity Ar gas flow at 1873 K for 36 ks and the weight change was monitored by an electro-microbalance. The weight of the un-coated SiC specimen decreased significantly due to the active oxidation, while the weight losses of HfO 2-coated SiC specimens after the isothermal oxidation for 36 ks were smaller than that of un-coated specimen. TEM image of HfO2-coated SiC specimen after oxidation depicted that thick SiO2 layer (∼800 nm) with a small amount of Hf elements formed on the surface of the specimen. XRD analysis indicated that HfC formed during the isothermal oxidation of HfO2-coated SiC specimen.
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U2 - 10.1149/1.3224755
DO - 10.1149/1.3224755
M3 - Conference contribution
AN - SCOPUS:77649219480
SN - 9781615676392
T3 - ECS Transactions
SP - 185
EP - 190
BT - ECS Transactions - High Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting
T2 - High Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting
Y2 - 12 October 2008 through 17 October 2008
ER -