Abstract
Sintered SiC substrate was coated with HfO2 by a sol-gel process using Hf(OEt)4, diethanol-amine, and ethanol. The HfO 2-coated SiC specimen was oxidized isothermally in high purity Ar gas flow at 1873 K for 36 ks and the weight change was monitored by an electro-microbalance. The weight of the un-coated SiC specimen decreased significantly due to the active oxidation, while the weight losses of HfO 2-coated SiC specimens after the isothermal oxidation for 36 ks were smaller than that of un-coated specimen. TEM image of HfO2-coated SiC specimen after oxidation depicted that thick SiO2 layer (∼800 nm) with a small amount of Hf elements formed on the surface of the specimen. XRD analysis indicated that HfC formed during the isothermal oxidation of HfO2-coated SiC specimen.
| Original language | English |
|---|---|
| Title of host publication | ECS Transactions |
| Pages | 185-190 |
| Number of pages | 6 |
| Volume | 16 |
| Edition | 44 |
| DOIs | |
| Publication status | Published - 2008 |
| Externally published | Yes |
| Event | High Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting - Honolulu, HI Duration: 2008 Oct 12 → 2008 Oct 17 |
Other
| Other | High Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting |
|---|---|
| City | Honolulu, HI |
| Period | 08/10/12 → 08/10/17 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Resistance to active oxidation of Sol-Gel HfO2 coated SiC polycrystal. / Akashi, T.; Kasajima, M.; Kiyono, Hajime.
ECS Transactions. Vol. 16 44. ed. 2008. p. 185-190.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Resistance to active oxidation of Sol-Gel HfO2 coated SiC polycrystal
AU - Akashi, T.
AU - Kasajima, M.
AU - Kiyono, Hajime
PY - 2008
Y1 - 2008
N2 - Sintered SiC substrate was coated with HfO2 by a sol-gel process using Hf(OEt)4, diethanol-amine, and ethanol. The HfO 2-coated SiC specimen was oxidized isothermally in high purity Ar gas flow at 1873 K for 36 ks and the weight change was monitored by an electro-microbalance. The weight of the un-coated SiC specimen decreased significantly due to the active oxidation, while the weight losses of HfO 2-coated SiC specimens after the isothermal oxidation for 36 ks were smaller than that of un-coated specimen. TEM image of HfO2-coated SiC specimen after oxidation depicted that thick SiO2 layer (∼800 nm) with a small amount of Hf elements formed on the surface of the specimen. XRD analysis indicated that HfC formed during the isothermal oxidation of HfO2-coated SiC specimen.
AB - Sintered SiC substrate was coated with HfO2 by a sol-gel process using Hf(OEt)4, diethanol-amine, and ethanol. The HfO 2-coated SiC specimen was oxidized isothermally in high purity Ar gas flow at 1873 K for 36 ks and the weight change was monitored by an electro-microbalance. The weight of the un-coated SiC specimen decreased significantly due to the active oxidation, while the weight losses of HfO 2-coated SiC specimens after the isothermal oxidation for 36 ks were smaller than that of un-coated specimen. TEM image of HfO2-coated SiC specimen after oxidation depicted that thick SiO2 layer (∼800 nm) with a small amount of Hf elements formed on the surface of the specimen. XRD analysis indicated that HfC formed during the isothermal oxidation of HfO2-coated SiC specimen.
UR - http://www.scopus.com/inward/record.url?scp=77649219480&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77649219480&partnerID=8YFLogxK
U2 - 10.1149/1.3224755
DO - 10.1149/1.3224755
M3 - Conference contribution
SN - 9781615676392
VL - 16
SP - 185
EP - 190
BT - ECS Transactions
ER -