Retarded growth of sputtered HfO 2 films on germanium

Koji Kita, Masashi Sasagawa, Masahiro Toyama, Kentaro Kyuno, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

HfO 2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO 2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO 2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO 2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO 2/Ge over HfO 2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsJ. Morais, D. Kumar, M. Houssa, R.K. Singh, D. Landheer, R. Ramesh, R.M. Wallace, S. Guha, H. Koinuma
Pages169-174
Number of pages6
Volume811
Publication statusPublished - 2004
Externally publishedYes
EventIntegration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions - San Francisco, CA, United States
Duration: 2004 Apr 132004 Apr 16

Other

OtherIntegration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions
CountryUnited States
CitySan Francisco, CA
Period04/4/1304/4/16

Fingerprint

Germanium
Substrates
Reactive sputtering
Film growth
Oxide films
Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kita, K., Sasagawa, M., Toyama, M., Kyuno, K., & Toriumi, A. (2004). Retarded growth of sputtered HfO 2 films on germanium In J. Morais, D. Kumar, M. Houssa, R. K. Singh, D. Landheer, R. Ramesh, R. M. Wallace, S. Guha, ... H. Koinuma (Eds.), Materials Research Society Symposium Proceedings (Vol. 811, pp. 169-174)

Retarded growth of sputtered HfO 2 films on germanium . / Kita, Koji; Sasagawa, Masashi; Toyama, Masahiro; Kyuno, Kentaro; Toriumi, Akira.

Materials Research Society Symposium Proceedings. ed. / J. Morais; D. Kumar; M. Houssa; R.K. Singh; D. Landheer; R. Ramesh; R.M. Wallace; S. Guha; H. Koinuma. Vol. 811 2004. p. 169-174.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kita, K, Sasagawa, M, Toyama, M, Kyuno, K & Toriumi, A 2004, Retarded growth of sputtered HfO 2 films on germanium in J Morais, D Kumar, M Houssa, RK Singh, D Landheer, R Ramesh, RM Wallace, S Guha & H Koinuma (eds), Materials Research Society Symposium Proceedings. vol. 811, pp. 169-174, Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions, San Francisco, CA, United States, 04/4/13.
Kita K, Sasagawa M, Toyama M, Kyuno K, Toriumi A. Retarded growth of sputtered HfO 2 films on germanium In Morais J, Kumar D, Houssa M, Singh RK, Landheer D, Ramesh R, Wallace RM, Guha S, Koinuma H, editors, Materials Research Society Symposium Proceedings. Vol. 811. 2004. p. 169-174
Kita, Koji ; Sasagawa, Masashi ; Toyama, Masahiro ; Kyuno, Kentaro ; Toriumi, Akira. / Retarded growth of sputtered HfO 2 films on germanium Materials Research Society Symposium Proceedings. editor / J. Morais ; D. Kumar ; M. Houssa ; R.K. Singh ; D. Landheer ; R. Ramesh ; R.M. Wallace ; S. Guha ; H. Koinuma. Vol. 811 2004. pp. 169-174
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