Retarded growth of sputtered HfO2 films on germanium

Koji Kita, Masashi Sasagawa, Masahiro Toyama, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journalConference article

Abstract

HfO2 films were deposited by reactive sputtering on Ge and Si substrates simultaneously, and we found not only the interface layer but the HfO2 film was thinner on Ge substrate compared with that on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before HfO2 film deposition. The role of metallic Hf is understandable by assuming a formation of volatile Hf-Ge-O ternary compounds at the early stage of film growth. These results show an advantage of HfO 2/Ge over HfO2/Si systems from the viewpoint of further scaling of electrical equivalent thickness of the gate oxide films.

Original languageEnglish
Pages (from-to)293-298
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume809
Publication statusPublished - 2004 Dec 1
EventHigh-Mobility Group-IV Materials and Devices - San Francisco, CA, United States
Duration: 2004 Apr 132004 Apr 15

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kita, K., Sasagawa, M., Toyama, M., Kyuno, K., & Toriumi, A. (2004). Retarded growth of sputtered HfO2 films on germanium. Materials Research Society Symposium Proceedings, 809, 293-298.