Reversible creation and annihilation of a local leakage path in HfO 2/GeOx stacked gate dielectrics: A direct observation by ultrahigh vacuum conducting atomic force microscopy

K. Yamamura, K. Kita, A. Toriumi, K. Kyuno

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By direct observation using ultrahigh vacuum conducting atomic force microscopy, it is found that a local leakage path in Hf O2 Ge Ox stacks created by an electrical stress with a positive tip bias annihilates after applying a reverse tip bias. The creation and annihilation of these paths are repeatable without noticeable degradation. The fact that these paths annihilate by a very small reverse bias suggests that this behavior is caused by local reduction and oxidation in the Hf O2 layer.

Original languageEnglish
Article number222101
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 2006 Dec 7


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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