Reversible creation and annihilation of a local leakage path in HfO 2/GeOx stacked gate dielectrics

A direct observation by ultrahigh vacuum conducting atomic force microscopy

K. Yamamura, K. Kita, A. Toriumi, Kentaro Kyuno

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

By direct observation using ultrahigh vacuum conducting atomic force microscopy, it is found that a local leakage path in Hf O2 Ge Ox stacks created by an electrical stress with a positive tip bias annihilates after applying a reverse tip bias. The creation and annihilation of these paths are repeatable without noticeable degradation. The fact that these paths annihilate by a very small reverse bias suggests that this behavior is caused by local reduction and oxidation in the Hf O2 layer.

Original languageEnglish
Article number222101
JournalApplied Physics Letters
Volume89
Issue number22
DOIs
Publication statusPublished - 2006
Externally publishedYes

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ultrahigh vacuum
leakage
atomic force microscopy
conduction
degradation
oxidation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "By direct observation using ultrahigh vacuum conducting atomic force microscopy, it is found that a local leakage path in Hf O2 Ge Ox stacks created by an electrical stress with a positive tip bias annihilates after applying a reverse tip bias. The creation and annihilation of these paths are repeatable without noticeable degradation. The fact that these paths annihilate by a very small reverse bias suggests that this behavior is caused by local reduction and oxidation in the Hf O2 layer.",
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AU - Kyuno, Kentaro

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AB - By direct observation using ultrahigh vacuum conducting atomic force microscopy, it is found that a local leakage path in Hf O2 Ge Ox stacks created by an electrical stress with a positive tip bias annihilates after applying a reverse tip bias. The creation and annihilation of these paths are repeatable without noticeable degradation. The fact that these paths annihilate by a very small reverse bias suggests that this behavior is caused by local reduction and oxidation in the Hf O2 layer.

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