By direct observation using ultrahigh vacuum conducting atomic force microscopy, it is found that a local leakage path in Hf O2 Ge Ox stacks created by an electrical stress with a positive tip bias annihilates after applying a reverse tip bias. The creation and annihilation of these paths are repeatable without noticeable degradation. The fact that these paths annihilate by a very small reverse bias suggests that this behavior is caused by local reduction and oxidation in the Hf O2 layer.
|Journal||Applied Physics Letters|
|Publication status||Published - 2006 Dec 7|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)