Reversible creation and annihilation of a local leakage path in HfO2/GeOx stacked gate dielectrics: A direct observation by ultrahigh vacuum conducting atomic force microscopy

K.Yamamura K.Yamamura; K.Kita K.Kita; A.Toriumi A.Toriumi; K.Kyuno K.Kyuno; Kentaro Kyuno

Reversible creation and annihilation of a local leakage path in HfO2/GeOx stacked gate dielectrics: A direct observation by ultrahigh vacuum conducting atomic force microscopy

K.Yamamura K.Yamamura, K.Kita K.Kita, A.Toriumi A.Toriumi, K.Kyuno K.Kyuno, Kentaro Kyuno

Functional Control Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Applied Physics Letters 89
Publication status	Published - 2006 Nov 1

Cite this

Reversible creation and annihilation of a local leakage path in HfO2/GeOx stacked gate dielectrics: A direct observation by ultrahigh vacuum conducting atomic force microscopy. / K.Yamamura, K.Yamamura; K.Kita, K.Kita; A.Toriumi, A.Toriumi; K.Kyuno, K.Kyuno; Kyuno, Kentaro.

In: Applied Physics Letters 89, 01.11.2006.

Research output: Contribution to journal › Article › peer-review

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