RF HBT oscillators with low-phase noise and high-power performance utilizing (λ/4 ± δ) open-stubs resonator

Ken'ichi Hosoya, Shinichi Tanaka, Yasushi Amamiya, Takaki Niwa, Hidenori Shimawaki, Kazuhiko Honjo

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

This paper presents a new type of transmission-line resonator and its application to RF (microwave and millimeterwave) heterojunction bipolar transistor (HBT) oscillators. The resonator is a parallel combination of two open stubs having length of λ/4 ± δ(δ ≪ λ), where λ is a wavelength at a resonant frequency. The most important feature of this resonator is that the coupling coefficient (βC) can be controlled by changing δ while maintaining unloaded Q-factor (Qu) constant. Choosing a small value of δ allows us to reduce βC or equivalently to increase loaded Q-factor (QL). Since coupling elements such as capacitors or electromagnetic gaps are not needed, βC and QL can be precisely controlled based on mature lithography technology. This feature of the resonator proves useful in reducing phase noise and also in enhancing output power of microwave oscillators. The proposed resonator is applied to 18-GHz and 38-GHz HBT oscillators, leading to the phase noise of -96-dBc/Hz at 100-kHz offset with 10.3-dBm output power (18-GHz oscillator) and - 104-dBc/Hz at 1-MHz offset with 11.9 dBm (38-GHz oscillator). These performances are comparable to or better than state-of-the-art values for GaAs- or InP-based planar-circuit fundamental-frequency oscillators at the same frequency bands.

Original languageEnglish
Pages (from-to)1670-1682
Number of pages13
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume53
Issue number8
DOIs
Publication statusPublished - 2006 Aug
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
Phase noise
Resonators
Microwave oscillators
Lithography
Frequency bands
Electric lines
Natural frequencies
Capacitors
Microwaves
Wavelength
Networks (circuits)

Keywords

  • Microwave oscillators
  • Millimeter wave oscillators
  • Phase noise
  • Q-factor
  • Transmission line resonators

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

RF HBT oscillators with low-phase noise and high-power performance utilizing (λ/4 ± δ) open-stubs resonator. / Hosoya, Ken'ichi; Tanaka, Shinichi; Amamiya, Yasushi; Niwa, Takaki; Shimawaki, Hidenori; Honjo, Kazuhiko.

In: IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 53, No. 8, 08.2006, p. 1670-1682.

Research output: Contribution to journalArticle

Hosoya, Ken'ichi ; Tanaka, Shinichi ; Amamiya, Yasushi ; Niwa, Takaki ; Shimawaki, Hidenori ; Honjo, Kazuhiko. / RF HBT oscillators with low-phase noise and high-power performance utilizing (λ/4 ± δ) open-stubs resonator. In: IEEE Transactions on Circuits and Systems I: Regular Papers. 2006 ; Vol. 53, No. 8. pp. 1670-1682.
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AB - This paper presents a new type of transmission-line resonator and its application to RF (microwave and millimeterwave) heterojunction bipolar transistor (HBT) oscillators. The resonator is a parallel combination of two open stubs having length of λ/4 ± δ(δ ≪ λ), where λ is a wavelength at a resonant frequency. The most important feature of this resonator is that the coupling coefficient (βC) can be controlled by changing δ while maintaining unloaded Q-factor (Qu) constant. Choosing a small value of δ allows us to reduce βC or equivalently to increase loaded Q-factor (QL). Since coupling elements such as capacitors or electromagnetic gaps are not needed, βC and QL can be precisely controlled based on mature lithography technology. This feature of the resonator proves useful in reducing phase noise and also in enhancing output power of microwave oscillators. The proposed resonator is applied to 18-GHz and 38-GHz HBT oscillators, leading to the phase noise of -96-dBc/Hz at 100-kHz offset with 10.3-dBm output power (18-GHz oscillator) and - 104-dBc/Hz at 1-MHz offset with 11.9 dBm (38-GHz oscillator). These performances are comparable to or better than state-of-the-art values for GaAs- or InP-based planar-circuit fundamental-frequency oscillators at the same frequency bands.

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