Role of Al atoms in (TaC)1-xAlx gate electrode on Vfb for HfO2 gate stack

M.Kimura M.Kimura; T.Nabatame T.Nabatame; H.Yamada H.Yamada; A.Ohi A.Ohi; T.Chikyow T.Chikyow; T.Ohishi T.Ohishi; Tomoji Oishi

Role of Al atoms in (TaC)1-xAlx gate electrode on Vfb for HfO2 gate stack

M.Kimura M.Kimura, T.Nabatame T.Nabatame, H.Yamada H.Yamada, A.Ohi A.Ohi, T.Chikyow T.Chikyow, T.Ohishi T.Ohishi, Tomoji Oishi

Regional Environment Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	NIMS(物質材料研究機構）連携大学院ワークショップ、早稲田大
Publication status	Published - 2011 Nov 4

Cite this

@article{95de07599e5d4a91a9e2bc0e2b78308b,

title = "Role of Al atoms in (TaC)1-xAlx gate electrode on Vfb for HfO2 gate stack",

author = "M.Kimura M.Kimura and T.Nabatame T.Nabatame and H.Yamada H.Yamada and A.Ohi A.Ohi and T.Chikyow T.Chikyow and T.Ohishi T.Ohishi and Tomoji Oishi",

year = "2011",

month = nov,

day = "4",

language = "English",

journal = "NIMS(物質材料研究機構）連携大学院ワークショップ、早稲田大",

}

TY - JOUR

T1 - Role of Al atoms in (TaC)1-xAlx gate electrode on Vfb for HfO2 gate stack

AU - M.Kimura, M.Kimura

AU - T.Nabatame, T.Nabatame

AU - H.Yamada, H.Yamada

AU - A.Ohi, A.Ohi

AU - T.Chikyow, T.Chikyow

AU - T.Ohishi, T.Ohishi

AU - Oishi, Tomoji

PY - 2011/11/4

Y1 - 2011/11/4

M3 - Article

JO - NIMS(物質材料研究機構）連携大学院ワークショップ、早稲田大

JF - NIMS(物質材料研究機構）連携大学院ワークショップ、早稲田大

ER -