Role of nonstoichiometry on UV absorption and luminescence in high-purity silica.

Hiroyuki Nishikawa, Ryoichi Tohmon, Kaya Nagasawa, Yoshimichi Ohki, Yoshimasa Hama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Role of nonstoichiometry on the formation of UV absorption and luminescence bands in high-purity silica is discussed. The 5.0-eV and 3.8-eV bands are observed in "oxygen-deficient" and "oxygen-surplus" silica, respectively. The 5.0-eV band is caused by oxygen vacancies (≡Si- Si≡) and the 3.8-eV band by peroxy linkages (≡Si-0-0-Si≡). Synthesis conditions and thermal history after the synthesis are shown to affect the formation of defects such as oxygen vacancies and peroxy linkages. The 2.7-eV luminescence band observed in "oxygen-deficient" silica is shown to be primarily due to the oxygen vacancies.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Pages281-289
Number of pages9
Volume1128
DOIs
Publication statusPublished - 1989
Externally publishedYes

Fingerprint

Oxygen vacancies
Silicon Dioxide
Luminescence
purity
Silica
luminescence
Oxygen
silicon dioxide
oxygen
linkages
Defects
synthesis
histories
absorption spectra
defects

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Nishikawa, H., Tohmon, R., Nagasawa, K., Ohki, Y., & Hama, Y. (1989). Role of nonstoichiometry on UV absorption and luminescence in high-purity silica. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1128, pp. 281-289) https://doi.org/10.1117/12.961473

Role of nonstoichiometry on UV absorption and luminescence in high-purity silica. / Nishikawa, Hiroyuki; Tohmon, Ryoichi; Nagasawa, Kaya; Ohki, Yoshimichi; Hama, Yoshimasa.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1128 1989. p. 281-289.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nishikawa, H, Tohmon, R, Nagasawa, K, Ohki, Y & Hama, Y 1989, Role of nonstoichiometry on UV absorption and luminescence in high-purity silica. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 1128, pp. 281-289. https://doi.org/10.1117/12.961473
Nishikawa H, Tohmon R, Nagasawa K, Ohki Y, Hama Y. Role of nonstoichiometry on UV absorption and luminescence in high-purity silica. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1128. 1989. p. 281-289 https://doi.org/10.1117/12.961473
Nishikawa, Hiroyuki ; Tohmon, Ryoichi ; Nagasawa, Kaya ; Ohki, Yoshimichi ; Hama, Yoshimasa. / Role of nonstoichiometry on UV absorption and luminescence in high-purity silica. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1128 1989. pp. 281-289
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