Role of oxygen vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

Y.Nunoshige Y.Nunoshige, T.Nabatame T.Nabatame, H.Ohta H.Ohta, A.Toriumi A.Toriumi, T.Ohishi T.Ohishi, Tomoji Oishi

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Proceedings of the 5th Inteinational Symposium on Contorol of Semiconductor Interfaces
Publication status	Published - 2007 Nov 12

Cite this

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title = "Role of oxygen vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates",

author = "Y.Nunoshige Y.Nunoshige and T.Nabatame T.Nabatame and H.Ohta H.Ohta and A.Toriumi A.Toriumi and T.Ohishi T.Ohishi and Tomoji Oishi",

year = "2007",

month = nov,

day = "12",

language = "English",

journal = "Proceedings of the 5th Inteinational Symposium on Contorol of Semiconductor Interfaces",

}

TY - JOUR

T1 - Role of oxygen vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

AU - Y.Nunoshige, Y.Nunoshige

AU - T.Nabatame, T.Nabatame

AU - H.Ohta, H.Ohta

AU - A.Toriumi, A.Toriumi

AU - T.Ohishi, T.Ohishi

AU - Oishi, Tomoji

PY - 2007/11/12

Y1 - 2007/11/12

M3 - Article

JO - Proceedings of the 5th Inteinational Symposium on Contorol of Semiconductor Interfaces

JF - Proceedings of the 5th Inteinational Symposium on Contorol of Semiconductor Interfaces

ER -