Original language | English |
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Journal | Proceedings of the 5th Inteinational Symposium on Contorol of Semiconductor Interfaces |
Publication status | Published - 2007 Nov 12 |
Role of oxygen vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates
Y.Nunoshige Y.Nunoshige, T.Nabatame T.Nabatame, H.Ohta H.Ohta, A.Toriumi A.Toriumi, T.Ohishi T.Ohishi, Tomoji Oishi
Research output: Contribution to journal › Article › peer-review