| Original language | English |
|---|---|
| Journal | Proceedings of the 5th Inteinational Symposium on Contorol of Semiconductor Interfaces |
| Publication status | Published - 2007 Nov 12 |
Cite this
Role of oxygen vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates. / Y.Nunoshige, Y.Nunoshige; T.Nabatame, T.Nabatame; H.Ohta, H.Ohta; A.Toriumi, A.Toriumi; T.Ohishi, T.Ohishi; Oishi, Tomoji.
In: Proceedings of the 5th Inteinational Symposium on Contorol of Semiconductor Interfaces, 12.11.2007.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Role of oxygen vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates
AU - Y.Nunoshige, Y.Nunoshige
AU - T.Nabatame, T.Nabatame
AU - H.Ohta, H.Ohta
AU - A.Toriumi, A.Toriumi
AU - T.Ohishi, T.Ohishi
AU - Oishi, Tomoji
PY - 2007/11/12
Y1 - 2007/11/12
M3 - Article
JO - Proceedings of the 5th Inteinational Symposium on Contorol of Semiconductor Interfaces
JF - Proceedings of the 5th Inteinational Symposium on Contorol of Semiconductor Interfaces
ER -