Role of oxygen vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

Y.Nunoshige Y.Nunoshige, T.Nabatame T.Nabatame, H.Ohta H.Ohta, A.Toriumi A.Toriumi, T.Ohishi T.Ohishi, Tomoji Oishi

Research output: Contribution to journalArticle

Original languageEnglish
JournalProceedings of the 5th Inteinational Symposium on Contorol of Semiconductor Interfaces
Publication statusPublished - 2007 Nov 12

Cite this

Role of oxygen vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates. / Y.Nunoshige, Y.Nunoshige; T.Nabatame, T.Nabatame; H.Ohta, H.Ohta; A.Toriumi, A.Toriumi; T.Ohishi, T.Ohishi; Oishi, Tomoji.

In: Proceedings of the 5th Inteinational Symposium on Contorol of Semiconductor Interfaces, 12.11.2007.

Research output: Contribution to journalArticle

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