Role of oxygen vacancy inHfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

Y.Nunoshige Y.Nunoshige, T.Nabatame T.Nabatame, H.Ohta A.Toriumi, T.Ohishi T.Ohishi, Tomoji Oishi

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	The 5th International Symposium on Control of Semeiconductor Interfaces(Tokyo Metropolitan University,Tokyo)
Publication status	Published - 2007 Nov 12

Cite this

Research output: Contribution to journal › Article › peer-review

@article{52af047dba334aa89fab178eb8f2353e,

title = "Role of oxygen vacancy inHfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates",

author = "Y.Nunoshige Y.Nunoshige and T.Nabatame T.Nabatame and H.Ohta A.Toriumi and T.Ohishi T.Ohishi and Tomoji Oishi",

year = "2007",

month = nov,

day = "12",

language = "English",

journal = "The 5th International Symposium on Control of Semeiconductor Interfaces(Tokyo Metropolitan University,Tokyo)",

}

TY - JOUR

T1 - Role of oxygen vacancy inHfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

AU - Y.Nunoshige, Y.Nunoshige

AU - T.Nabatame, T.Nabatame

AU - A.Toriumi, H.Ohta

AU - T.Ohishi, T.Ohishi

AU - Oishi, Tomoji

PY - 2007/11/12

Y1 - 2007/11/12

M3 - Article

JO - The 5th International Symposium on Control of Semeiconductor Interfaces(Tokyo Metropolitan University,Tokyo)

JF - The 5th International Symposium on Control of Semeiconductor Interfaces(Tokyo Metropolitan University,Tokyo)

ER -