Role of oxygen vacancy inHfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates

Y.Nunoshige Y.Nunoshige, T.Nabatame T.Nabatame, H.Ohta A.Toriumi, T.Ohishi T.Ohishi, Tomoji Oishi

Research output: Contribution to journalArticle

Original languageEnglish
JournalThe 5th International Symposium on Control of Semeiconductor Interfaces(Tokyo Metropolitan University,Tokyo)
Publication statusPublished - 2007 Nov 12

Cite this

Role of oxygen vacancy inHfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates. / Y.Nunoshige, Y.Nunoshige; T.Nabatame, T.Nabatame; A.Toriumi, H.Ohta; T.Ohishi, T.Ohishi; Oishi, Tomoji.

In: The 5th International Symposium on Control of Semeiconductor Interfaces(Tokyo Metropolitan University,Tokyo), 12.11.2007.

Research output: Contribution to journalArticle

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AU - A.Toriumi, H.Ohta

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AU - Oishi, Tomoji

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